CS20-22MOF1

CS 20-22moF1 VDRM = VRRM = 2200 V IT(AV) = 18 A = 200 A ITSM High Voltage Phase Control Thyristor in High Voltage ISOPLUS i4-PAC™ Part number CS 20-22moF1 5 1 2 5 1 2 Features / Advantages: Applications: Package: i4-Pac • high voltage thyristor - for line frequency - chip technology for long term stability • ISOPLUS i4-PAC™ high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline • controlled rectifiers - power supplies - drives • AC switches • capacitor discharge control - flash tubes - X-ray and laser generators • Isolation Voltage: 3000 V~ • Industry convenient outline • RoHS compliant • Epoxy meets UL 94V-0 • Soldering pins for PCB mounting • Backside: DCB ceramic • Reduced weight • Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, test conditions and dimensions. © 2022 IXYS All rights reserved 20220623b 1-3 CS 20-22moF1 Thyristor Ratings Symbol Definitions Conditions min. VDRM, RRM max. repetitive blocking voltage IT(AV) IT(AV) average forward current sine 180° square; d = 1/3 TC = TC = ITSM max. surge on-state current sine 180°; t = 10 ms; VR = 0 V TVJ = (di/dt)cr critical rate of rise of current TVJ = TVJM f = 50 Hz; tp = 200 µs repetitive, IT = 40 A VD = 2/3 VDRM IG = 0.45 A diG /dt = 0.45 A/µs non repetitive, IT = 20 A typ. max. Unit 2200 V 90°C 90°C 18 16 A A 25°C 200 A 100 A/µs 250 A/µs 2500 V/µs 1.5 V V (dv/dt)cr critical rate of rise of voltage TVJ = TVJM; VD = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) VT forward voltage IT = 20 A TVJ = 25°C TVJ = 125°C VGT IGT gate trigger voltage gate trigger current VD = 6 V TVJ = 25°C 2.3 250 V mA VGD IGD gate non-trigger voltage gate non-trigger current VD = 2/3 VDRM TVJ = 125°C 0.2 5 V mA IL latching current tp = 10 µs; VD = 6 V IG = 0.45 A; diG /dt = 0.45 A/µs TVJ = 25°C 500 mA IH holding current VD = 6 V; RGK = ∞ TVJ = 25°C 150 mA tgd gate controlled delay time VD = ½ VDRM IG = 0.45 A; diG /dt = 0.45 A/µs TVJ = 25°C 2 IR ID reverse current drain current VR = VRRM; VD = VDRM TVJ = 25°C TVJ = 125°C 2 RthJC thermal resistance juntion to case DC current RthCH thermal resistance case to heatsink DC current IXYS reserves the right to change limits, test conditions and dimensions. © 2022 IXYS All rights reserved 1.3 1.3 0.15 µs 50 µA mA 0.92 K/W K/W 20220623b 2-3 CS 20-22moF1 Package I4-Pac Ratings Symbol Definitions Conditions IRMS RMS current per terminal TVJ virtual junction temperature Top Tstg min. max. Unit 70 A -40 150 °C operation temperature -40 125 °C storage temperature -40 150 °C Weight typ. 5.5 FC mounting force with clip dSpp/App dSpb/Apb creepage distance on surface | striking distance through air VISOL isolation voltage 20 t = 1 second t = 1 minute terminal to terminal terminal to backside 50/60 Hz, RMS, IISOL < 1 mA g 120 N 7.2 5.1 mm mm 3000 V 2500 V Product Marking UL Logo IXYS ® ISOPLUS® Part Number Date Code XXXXXXXXX yywwZ 1234 Location Lot# Dimensions in mm (1 mm = 0.0394") A2 E1 D D3 D1 R Q E D2 A L L1 b4 c 1 2 3x b 5 A1 3x b2 e1 e Dim. A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e e1 L L1 Q R W Millimeter min max 4.83 5.21 2.59 3.00 1.17 2.16 1.14 1.40 1.47 1.73 2.54 2.79 0.51 0.74 20.80 21.34 14.99 15.75 1.65 2.03 20.30 20.70 19.56 20.29 16.76 17.53 3.81 BSC 11.43 BSC 19.81 21.34 2.11 2.59 5.33 6.20 4.57 2.54 0.10 - Inches min max 0.190 0.205 0.102 0.118 0.046 0.085 0.045 0.055 0.058 0.068 0.100 0.110 0.020 0.029 0.819 0.840 0.590 0.620 0.065 0.080 0.799 0.815 0.770 0.799 0.660 0.690 0.150 BSC 0.450 BSC 0.780 0.840 0.083 0.102 0.210 0.244 0.100 0.180 0.004 - Die konvexe Form des Substrates ist typ. < 0.05 mm über der Kunststoffoberfläche der Bauteilunterseite W IXYS reserves the right to change limits, test conditions and dimensions. © 2022 IXYS All rights reserved The convexbow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side 20220623b 3-3