CS23-08IO2

CS 23 Phase Control Thyristors VRRM = 800-1600 V IT(RMS) = 50 A IT(AV)M = 32 A Type Replacements CS23-08io2 MCO25-12io1; MCO50-12io1; CLA50E1200HB CS23-12io2 MCO25-12io1; MCO50-12io1; CLA50E1200HB CS23-16io2 MCO25-16io1; MCO50-16io1; CMA50E1600HB VRSM VDSM VRRM VDRM V V 900 1300 1700 800 1200 1600 TO-208AA (TO-48) 2 3 Type 2 1 CS 23-08io2 CS 23-12io2 CS 23-16io2 3 1 M6 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions IT(RMS) IT(AV)M TVJ = TVJM Tcase = 85°C; 180° sine Tcase = 69°C; 180° sine ITSM TVJ = 45°C; VR = 0 I2t (di/dt)cr Maximum Ratings 50 25 32 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 480 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 400 430 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1010 970 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 800 770 A2s A2s TVJ = TVJM repetitive, IT = 75 A f = 50 Hz, tP =200 µs VD = 2/3 VDRM IG = 0.3 A non repetitive, IT = IT(AV)M diG/dt = 0.3 A/µs 150 A/µs 500 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) PGM TVJ = TVJM IT = IT(AV)M VRGM TVJ TVJM Tstg Md Weight Applications Ÿ Motor control Ÿ Power converter Ÿ AC power controller t u Advantages Ÿ Space and weight savings Ÿ Simple mounting Ÿ Improved temperature and power cycling o e s a h p (dv/dt)cr PG(AV) Features Ÿ Thyristor for line frequencies Ÿ International standard package JEDEC TO-208AA Ÿ Planar glassivated chip Ÿ Long-term stability of blocking currents and voltages Dimensions in mm (1 mm = 0.0394") 1000 tP = 30 µs tP = 300 µs V/µs 10 5 0.5 W W W 10 V -40...+125 125 -40...+125 °C °C °C Mounting torque 2.7-3.3 24-29 12 Nm lb.in. g Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved 20190130b 1-3 CS 23 Symbol Values Test Conditions Characteristic IR, ID TVJ = TVJM; VR = VRRM; VD = VDRM ≤ 3 VT IT ≤ 1.8 V VT0 rT For power-loss calculations only (TVJ = 125°C) 1.0 10 V mΩ VGT VD = 6 V; IGT VD = 6 V; VGD IGD TVJ = TVJM; IL = 80 A; TVJ = 25°C mA TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C ≤ ≤ ≤ ≤ 2.5 3.5 50 80 V V mA mA VD = 2/3 VDRM ≤ ≤ 0.2 1 V mA TVJ = 25°C; tP = 10 µs IG = 0.15 A; diG/dt = 0.15 A/µs ≤ 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ ≤ 100 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 0.15 A; diG/dt = 0.15 A/µs ≤ 2 µs tq TVJ = TVJM; IT = 25 A, tP = 300 µs; di/dt = -20 A/µs VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM typ. 60 µs RthJC RthJH DC current DC current 1.0 K/W 1.61 K/W dS dA a Creepage distance on surface Strike distance through air Max. acceleration, 50 Hz 1.5 1.5 50 mm mm m/s2 t u Accessories: Nut M6 DIN 439/SW14 Lock washer A6 DIN 128 V 120 A µs C 3 tgd 1 IT 101 IGT: TVJ= -40°C B IGT: TVJ= 0°C B 2 typ. lim. 100 B IGT: TVJ= 25°C VG o e s a h p 102 4 TVJ= 125°C TVJ= 25°C 80 60 lim. 100 40 typ. 20 A IGD: TVJ= 25°C IGD: TVJ=125°C 0 0 25 50 75 mA 100 10-1 10-2 10-1 t IG Fig. 1 Gate voltage and gate current Triggering: A = no; B = possible; C = safe Fig. 2 Gate controlled delay time tgd IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved A 101 100 0 0.0 0.5 1.0 1.5 2.0 V 2.5 VT Fig. 3 On-state characteristics 20190130b 2-3 CS 23 500 40 1000 VR = 0 V 2 800 A s A 50Hz, 80%VRRM 400 ITSM A TVJ = 45°C 600 30 IT(AV)M I2t TVJ = 45°C TVJ = 125°C TVJ = 125°C 400 300 20 200 200 10 100 0 10-3 0 100 10-2 10-1 100 s 101 2 1 3 t 8 910 4 5 6 7 ms t Fig. 5 I2t versus time (1-10 ms) Fig. 4 Surge overload current ITSM: crest value, t: duration 50 0 Fig. 6 100 °C 150 Tcase Maximum forward current at case temperature 180° sine 80 W RthJA : 1.9 K/W 60 PT 2.3 K/W 2.7 K/W 2.7 K/W 40 DC 180° sin 120° 60° 30° 20 0 0 Fig. 7 10 4.3 K/W t u 6.1 K/W o e s a h p 20 30 50 A 40 IT(AV)M 0 60 50 °C 150 100 Tamb Power dissipation versus on-state current and ambient temperature RthJH for various conduction angles d: K/W d = 60° 2 ZthJH d RthJH (K/W) DC 180° 120° 60° 30° 1.61 1.85 2.03 2.35 2.60 d = 30° d = 120° d = 180° d = DC Constants for ZthJH calculation: i 1 0 10-3 Fig. 8 1 2 3 4 5 6 10-2 10-1 100 101 102 103 s t Rthi (K/W) 0.224 0.132 0.321 0.522 0.249 0.162 ti (s) 0.003 0.028 0.216 1.1 4.2 43.2 104 Transient thermal impedance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved 20190130b 3-3