CS300-18IO3

CS 300 Phase Control Thyristors VRRM = 1200-1800 V IT(RMS) = 600 A IT(AV)M = 380 A 3 2 4 VRSM VDSM V 1300 1700 1900 VRRM VDRM V 1200 1600 1800 Type 1 4 2 CS 300-12io3 CS 300-16io3 CS 300-18io3 Not for new application 3 Symbol IT(RMS) IT(AV)M ITSM Test Conditions TVJ = TVJM Tcase = 85°C; 180° sine Tcase = 75°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 600 330 380 8500 9000 8000 8500 360 000 340 000 320 000 303 500 100 A A A A A A A A2s A2s A2s A2s A/µs A/µs V/µs W W V °C °C °C Nm lb.in. g 1 1 = Anode, 2 = Cathode, 3 = Gate, 4 = Auxiliary Cathode I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Features Thyristor for line frequencies International flat base package Planar glassivated chip Long-term stability of blocking currents and voltages q q q q (di/dt)cr TVJ = TVJM repetitive, IT = 1000 A f = 50 Hz, tP =200 µs VD = 2/3 VDRM IG = 1 A non repetitive, IT = IT(AV)M diG/dt = 1 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = IT(AV)M tP = tP = 30 µs 10 ms Applications Motor control Power converter AC power controller q q q q 500 1000 120 10 10 -40...+125 125 -40...+125 q q (dv/dt)cr PGM VRGM TVJ TVJM Tstg Md Weight Advantages Space and weight savings Simple mounting Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Mounting torque 3.5 31 500 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 1999 IXYS All rights reserved 1-3 CS 300 Symbol IR, ID VT VT0 rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJH dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT = 1000 A; TVJ = 25°C For power-loss calculations only (TVJ = 125°C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C VD = 2/3 VDRM ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ Characteristic Values ≤ ≤ 40 1.43 1.0 0.43 2.0 2.8 150 250 0.2 1 100 100 2 150 0.09 0.12 1.55 1.55 50 mA V V mΩ V V mA mA V mA mA mA µs µs K/W K/W mm mm m/s2 TVJ = 25°C; tP = 10 µs IG = 0.7 A; diG/dt = 0.7 A/µs TVJ = 25°C; VD = 6 V; RGK = ∞ TVJ = 25°C; VD = 1/2 VDRM IG = 0.7 A; diG/dt = 0.7 A/µs TVJ = TVJM; IT =330 A, tP = 300 µs; di/dt = -20 A/µs typ. VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM DC current DC current Creepage distance on surface Strike distance through air Max. acceleration, 50 Hz 4 V 3 C 102 µs 1250 A 1000 a b VG tgd B IGT: TVJ= -40°C 101 IT 750 2 IGT: TVJ= 25°C B IGT: TVJ= 0°C TVJ= 125°C TVJ= 25°C a 100 b 500 1 B 250 A IGD: TVJ= 25°C IGD: TVJ=125°C 0 0 100 200 300 IG 400 mA 500 10-1 10-2 10-1 100 IG A 101 0 0.0 0.5 1.0 1.5 VT V 2.0 Fig. 1 Gate voltage and gate current Triggering: A = no; B = possible; C = safe © 1999 IXYS All rights reserved Fig. 2 Gate controlled delay time tgd a = limit; b = typical Fig. 3 On-state characteristics a = typical; b = limit 2-3 CS 300 9000 A 8000 7000 ITSM 6000 5000 4000 3000 100 2000 1000 10-3 0 10-2 10-1 t 100 s 101 0 50 100 °C 150 Tcase 200 500 VR = 0 V TVJ = 45°C TVJ = 125°C A 400 IT(AV)M 300 Fig. 4 Surge overload current ITSM: crest value, t: duration °C 62 71 80 89 98 107 Tc 116 125 W 700 600 PT 500 400 300 200 100 0 0 100 200 300 Fig. 5 Maximum forward current at case temperature 180° sine RthCA = 0.03 K/W+RthHA RthCA : 0.07 K/W 0.12 K/W 0.165 K/W 0.28 K/W 0.85 k/W W 700 600 500 400 300 200 100 PT DC 180° sin 120° sin 90° sin 60° sin 30° sin 400 500 A IT(AV)M 0 600 20 40 60 0 80 100 120 140°C Tamb Fig. 6 Power dissipation versus on-state current and ambient temperature (sinusoidal current) °C 62 71 80 89 98 107 Tc 116 125 W 700 600 PT 500 400 300 200 100 0 0 100 200 300 400 500 A IT(AV)M 0 600 20 40 DC 180° 120° 90° 60° 30° RthCA = 0.03 K/W+RthHA RthCA : W 700 600 0.07 K/W 0.12 K/W PT 0.165 K/W - K 25 (S) 500 0.28 K/W 0.85 k/W - K 25 (S) 400 300 200 100 0 80 100 120 140°C Tamb 60 Fig. 7 Power dissipation versus on-state current and ambient temperature (rectangular current) © 1999 IXYS All rights reserved 3-3