CS35-12IO4

CS 35 Phase Control Thyristors VRRM = 800-1400 V IT(RMS) = 120 A IT(AV)M = 69 A TO-208AC (TO-65) 2 3 VRSM VDSM V 900 1300 1500 VRRM VDRM V 800 1200 1400 Type 1 2 3 CS 35-08io4 CS 35-12io4 CS 35-14io4 1 ¼"-28 UNF-2 A 1 = Anode, 2 = Cathode, 3 = Gate Symbol IT(RMS) IT(AV)M ITSM Test Conditions TVJ = TVJM Tcase = 85°C; 180° sine Tcase = 80°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 120 63 69 1200 1340 1100 1250 7200 7550 6050 6500 150 A A A A A A A A2s A2s A2s A2s A/ms A/ms V/ms W W W V °C °C °C Nm lb.in. g q q q q Features Thyristor for line frequencies International standard package JEDEC TO-208AC Planar glassivated chip Long-term stability of blocking currents and voltages I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Applications Motor control Power converter AC power controller q q q q q q (di/dt)cr TVJ = TVJM repetitive, IT = 150 A f = 50 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.5 A non repetitive, IT = IT(AV)M diG/dt = 0.5 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) TVJ = TVJM IT = IT(AV)M tP = 30 ms tP = 500 ms Advantages Space and weight savings Simple mounting Improved temperature and power cycling 400 1000 10 5 0.5 10 -40...+125 125 -40...+125 (dv/dt)cr PGM PG(AV) VRGM TVJ TVJM Tstg Md Weight Dimensions in mm (1 mm = 0.0394") Mounting torque 2.5 22 20 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-3 CS 35 Symbol IR, ID VT VT0 rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJH dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT = 150 A; TVJ = 25°C For power-loss calculations only (TVJ = 125°C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C VD = 2/3 VDRM £ £ £ £ £ £ £ £ £ typ. Characteristic Values £ £ 10 1.5 0.85 3.5 1.5 1.9 100 200 0.2 1 100 80 2 100 0.4 0.6 1.7 1.7 50 mA V V mW V V mA mA V mA mA mA ms ms K/W K/W mm mm m/s2 TVJ = 25°C; tP = 30 ms IG = 0.1 A; diG/dt = 0.1 A/ms TVJ = 25°C; VD = 6 V; RGK = ¥ TVJ = 25°C; VD = 1/2 VDRM IG = 0.1 A; diG/dt = 0.1 A/ms TVJ = TVJM; IT = 50 A, tP = 200 ms; di/dt = -10 A/ms VR = 100 V; dv/dt = 10 V/ms; VD = 2/3 VDRM DC current DC current Creepage distance on surface Strike distance through air Max. acceleration, 50 Hz 10 8 V 6 4 VG 2 1 0.8 0.6 0.4 0.2 500 1: PG(AV)= 0.5 W 2: PGM= 5 W; tG = 500 ms 3: PGM= 10 W; tG = 30 ms A 400 typ. lim. TVJ= 25°C TVJ= 125°C 23 1 C B A IGD: TVJ= -40°C IGD: TVJ= 0°C IGD: TVJ= 25°C IT 300 200 100 IGD: TVJ= 25°C IGD: TVJ=125°C 0.1 100 2 4 68 0 0 1 2 3 VT V 4 101 102 103 mA 104 IG Fig. 1 Gate trigger range Triggering: A = no; B = possible, C = safe © 2000 IXYS All rights reserved Fig. 2 On-state characteristics 2-3 CS 35 1200 A 1000 ITSM 800 6 104 As 2 150 VR = 0 V A 50Hz, 80%VRRM TVJ = 45°C TVJ = 125°C I2t 4 TVJ = 45°C TVJ = 125°C IT(AV)M 100 DC 180° sin 120° 60° 30° 600 400 2 50 200 0 10-3 103 10-2 10-1 t 100 s 101 1 2 3 4 5 6 7 ms 10 89 t 0 0 50 100 °C 150 Tcase Fig. 3 Surge overload current ITSM: crest value, t: duration 200 W 150 PT Fig. 4 I2t versus time (1-10 ms) Fig. 5 Maximum forward current at case temperature RthJA : 0.9 K/W 1.3 K/W 1.6 K/W 3.3 K/W 100 50 DC 180° sin 120° 60° 30° 0 0 20 40 60 80 0 100 120 A 140 IT(AV)M 50 100 Tamb °C 150 Fig. 6 Power dissipation versus on-state current and ambient temperature 0.8 K/W 0.6 ZthJH 0.4 30° 60° 120° 180° DC RthJH for various conduction angles d: d DC 180° 120° 60° 30° RthJH (K/W) 0.6 0.65 0.677 0.725 0.775 Constants for ZthJH calculation: 0.2 i 1 2 3 4 10-2 10-1 100 101 t s 102 Rthi (K/W) 0.01 0.09 0.30 0.20 ti (s) 0.001 0.013 0.3 0.9 0.0 10-3 Fig. 7 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 3-3