CS8-12IO2

CS 8 Phase Control Thyristors VRRM = 800-1200 V IT(RMS) = 25 A IT(AV)M = 16 A TO-64 1 2 3 2 VRSM VDSM V 900 1300 VRRM VDRM V 800 1200 Type CS 8-08io2 CS 8-12io2 3 1 M5 1 = Anode, 2 = Cathode, 3 = Gate Symbol IT(RMS) IT(AV)M ITSM Test Conditions TVJ = TVJM Tcase = 85°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 25 16 250 270 200 220 310 306 200 200 150 A A A A A A As A2s A2s A2s A/ms A/ms V/ms 2 Features Thyristor for line frequencies International standard package JEDEC TO-64 Planar glassivated chip Long-term stability of blocking currents and voltages q q q q It 2 TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Applications Motor control Power converter AC power controller q q q q q q (di/dt)cr TVJ = TVJM repetitive, IT = 48 A f = 50 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.2 A non repetitive, IT = IT(AV)M diG/dt = 0.2 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) TVJ = TVJM IT = IT(AV)M tP = 30 ms tP = 300 ms 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 Advantages Space and weight savings Simple mounting Improved temperature and power cycling (dv/dt)cr PGM PG(AV) VRGM TVJ TVJM Tstg Md Weight Dimensions in mm (1 mm = 0.0394") W W W V °C °C °C Nm lb.in. g Mounting torque 2.5 22 6 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-3 CS 8 Symbol IR, ID VT VT0 rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJH dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT = 33 A; TVJ = 25°C For power-loss calculations only (TVJ = 125°C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C VD = 2/3 VDRM £ £ £ £ £ £ £ £ £ typ. Characteristic Values £ £ 3 1.6 1.0 18 2.5 3.5 30 50 0.2 1 100 80 2 60 1.5 2.5 1.55 1.55 50 mA V V mW V V mA mA V mA mA mA ms ms K/W K/W mm mm m/s2 TVJ = 25°C; tP = 10 ms IG = 0.09 A; diG/dt = 0.09 A/ms TVJ = 25°C; VD = 6 V; RGK = ¥ TVJ = 25°C; VD = 1/2 VDRM IG = 0.09 A; diG/dt = 0.09 A/ms TVJ = TVJM; IT = 16 A, tP = 300 ms; di/dt = -20 A/ms VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM DC current DC current Creepage distance on surface Strike distance through air Max. acceleration, 50 Hz Accessories: Nut M5 DIN 439/SW8 Lock washer A5 DIN 128 4 V 102 50 A 40 ms B C tgd IGT: TVJ= -40°C typ. lim. VG 3 B B IGT: TVJ= 25°C 101 IT 30 IGT: TVJ= 0°C 2 lim. 100 20 1 typ. A 0 0 IGD: TVJ= 25°C IGD: TVJ=125°C 10 TVJ= 125°C TVJ= 25°C 25 50 IG mA 75 10-1 10-2 10-1 100 t A 101 0 0.0 0.5 1.0 1.5 V VT 2.0 Fig. 1 Gate voltage and gate current Triggering: A = no; B = possible; C = safe Fig. 2 Gate controlled delay time tgd Fig. 3 On-state characteristics © 2000 IXYS All rights reserved 2-3 CS 8 300 A 250 ITSM 200 1000 800 As 2 20 VR = 0 V A 15 IT(AV)M 50Hz, 80%VRRM TVJ = 45°C TVJ = 125°C 600 I2t 400 150 10 TVJ = 45°C 100 200 5 50 TVJ = 125°C 0 10-3 100 10-2 10-1 t 100 s 101 1 2 3 4 5 6 7 ms 10 89 t 0 0 50 100 °C 150 Tcase Fig. 4 Surge overload current ITSM: crest value, t: duration 40 W 30 PT Fig. 5 I2t versus time (1-10 ms) Fig. 6 Maximum forward current at case temperature 180° sine RthJA : 2.8 K/W 3.2 K/W 3.6 K/W 3.6 K/W 20 DC 180° sin 120° 60° 30° 5.2 K/W 7 K/W 10 0 0 5 10 15 20 25 A IT(AV)M 0 30 50 100 Tamb °C 150 Fig. 7 Power dissipation versus on-state current and ambient temperature 3.5 K/W 3.0 2.5 ZthJH 2.0 1.5 1.0 0.5 0.0 10-3 RthJH for various conduction angles d: d = 30° d = 60° d = 120° d = 180° d = DC d DC 180° 120° 60° 30° RthJH (K/W) 2.5 2.79 2.95 3.17 3.32 Constants for ZthJH calculation: i 1 2 3 4 5 6 10-2 10-1 100 101 102 t s 103 Rthi (K/W) 0.252 0.333 0.5 0.833 0.416 0.166 ti (s) 0.005 0.0225 0.145 0.43 2.75 23 Fig. 8 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 3-3