DE275-102N06A

DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Maximum Ratings VDSS = 1000 V ID25 = 8A RDS(on) = 1.5 Ω PDC = 590 W Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 8 A IDM Tc = 25°C, pulse width limited by TJM 48 A IAR Tc = 25°C 6 A EAR Tc = 25°C 20 mJ 5 V/ns dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω >200 V/ns 590 W 300 W SG1 3.0 W Features RthJC 0.25 C/W RthJHS 0.50 C/W IS = 0 PDC PDHS Tc = 25°C Derate 2.0W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions min. VDSS VGS = 0 V, ID = 3 mA 1000 VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C gfs V 5.0 V ±100 nA 50 1 µA mA 2.5 4.3 7 0.50 -55 TJ +175 -55 Tstg 1.6mm (0.063 in) from case for 10 s SD1 SD2 • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (