DE275X2-102N06A

DE275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz. VDSS = 1000 V ID25 = 16 A RDS(on) = 0.8 Ω PDC = 1180 W Unless noted, specifications are for each output device Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 16 A IDM Tc = 25°C, pulse width limited by TJM 48 A IAR Tc = 25°C 6 A EAR Tc = 25°C 20 mJ 5 V/ns dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω >200 V/ns 1180 W 750 W 5.0 W PDC (1) PDHS (1) Tc = 25°C, Derate 5.0W/°C above 25°C PDAMB (1) Tc = 25°C Symbol Test Conditions Characteristic Values TJ = 25°C unless otherwise specified min. VGS = 0 V, ID = 3 ma VGS(th) VDS = VGS, ID = 4 ma IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C TJ = 125°C VGS = 0 RDS(on) 2 V ±100 nA 50 1 µA mA 1.6 Ω S 0.25 C/W 0.50 C/W +175 175 TJM -55 Tstg Weight 5.5 7.5 -55 TJ 1.6mm (0.063 in) from case for 10 s GATE 2 SD2 SourceSG2 2 Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (100MHz • Easy to mount—no insulators needed • High power density °C Note: All specifications are per each transistor, unless otherwise noted. °C (1) °C 300 °C 4 g Thermal specifications are for the package, not per transistor DE275X2-102N06A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. 0.3 Ω 1800 pF 130 pF 25 pF 21 pF 3 ns 2 ns 4 ns 5 ns 50 nC 20 nC 30 nC RG Ciss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Coss Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) Toff Qg(on) VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgs Qgd Source-Drain Diode max. Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions min. IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% typ. Trr IF = IS, -di/dt = 100A/µs, VR = 100V QRM IRM (1) max. 6 A 96 A 1.5 V 200 ns 0.6 µC 4 A These parameters apply to the package, not individual MOSFET devices. For detailed device mounting and installation instructions, see the “DESeries MOSFET Mounting Instructions” technical note on IXYS RF’s web site at www.ixysrf.com/Technical_Support/App_notes.html IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE275X2-102N06A RF Power MOSFET 275X2-102N06A Capacitances vs Vds 10000 Ciss Coss Capacitance in pF Crss 1000 100 10 0 100 200 300 400 500 600 700 800 900 1000 Vds in Volts S = S1 = Source1 S = S1 = Source1 G1 = Gate1 D1 = Drain1 G2 = Gate2 D2 = Drain2 S = S2 = Source2 S = S2 = Source2 Note: Sources S1, S2 are independent, having no common connection between them for the package diagram. DE275X2-102N06A RF Power MOSFET 102N06A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. 10 DRAIN Ld 4 Rd Lg Doff D1crs Roff D2crs 20 GATE 6 8 1 5 Ron Don Dcos Rds 3 M3 2 7 Ls 30 SOURCE Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the IXYS RF web site at www.ixysrf.com Net List: *SYM=POWMOSN .SUBCKT 102N06A 10 20 30 * TERMINALS: D G S * 1000 Volt 6 Amp 1.6 Ohm N-Channel Power MOSFET M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 .5 DON 6 2 D1 ROF 5 7 1.0 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 1.9N RD 4 1 1.6 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=4 KP=2.3) .MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.6 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=400P BV=1000 M=.35 VJ=.6 TT=400N RS=10M) .ENDS Doc #9200-0224 Rev 6 © 2006 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com