DE475-501N44A

DE475-501N44A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 48 A IDM Tc = 25°C, pulse width limited by TJM 288 A IAR Tc = 25°C 44 A EAR Tc = 25°C 30 mJ dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 1800 W 730 W 4.5 W RthJC 0.08 C/W RthJHS 0.20 C/W PDAMB Tc = 25°C Symbol Test Conditions min. VDSS VGS = 0 V, ID = 3 ma 500 VGS(th) VDS = VGS, ID = 4 ma 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test Weight max. V 5.5 V ±100 nA 50 1 µA mA 0.11 Ω 33 S +175 175 TJM TL typ. -55 -55 Tstg 1.6mm (0.063 in) from case for 10 s ID25 = 48 A RDS(on) = 0.11 Ω PDC = 1800W °C °C +175 DRAIN GATE SG1 SG2 SD1 SD2 Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power Characteristic Values TJ = 25°C unless otherwise specified TJ 500 V >200 V/ns PDC Tc = 25°C Derate 4.0W/°C above 25°C = 5 V/ns IS = 0 PDHS VDSS °C 300 °C 3 g • • − − • • • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (