DMA80IM1600HB

DMA80IM1600HB Standard Rectifier VRRM = 1600 V I FAV = 80 A VF = 1.55 V Single Diode Part number DMA80IM1600HB Backside: cathode 1 3 2 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● High commutation robustness ● High surge capability ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190716b DMA80IM1600HB Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop min. typ. 1600 TVJ = 25°C 40 µA VR = 1600 V TVJ = 150°C 1.5 mA IF = TVJ = 25°C 1.17 V 1.22 V 1.55 V IF = 80 A TVJ = 150 °C 80 A I F = 160 A average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case V VR = 1600 V I F = 160 A I FAV max. Unit 1700 V TC = 125 °C 1.59 V T VJ = 175 °C 80 A TVJ = 175 °C 0.82 V 4.8 mΩ 180° sine for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 0.35 K/W K/W 0.25 TC = 25°C 430 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1.30 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.41 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 1.11 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.20 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 8.45 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 8.21 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 6.11 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 5.94 kA²s 43 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20190716b DMA80IM1600HB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description D M A 80 IM 1600 HB IXYS Logo g = = = = = = = Diode Standard Rectifier (up to 1800V) Current Rating [A] Single Diode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DMA80IM1600HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DMA80IM1600HB * on die level Delivery Mode Tube Code No. 505616 T VJ = 175°C Rectifier V 0 max threshold voltage 0.82 V R0 max slope resistance * 2.6 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20190716b DMA80IM1600HB Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b b4 C A1 2x e 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20190716b DMA80IM1600HB Rectifier 160 1100 140 104 50 Hz, 80%VRRM VR = 0 V 1000 120 IF TVJ = 45°C 900 100 IFSM [A] 80 2 It TVJ = 45°C 800 [A] 60 TVJ = 25°C 40 TVJ = 125°C TVJ = 150°C 700 0.5 TVJ = 150°C 600 20 0 0.0 TVJ = 150°C 2 [A s] 1.0 1.5 500 0.001 2.0 103 0.01 VF [V] 0.1 1 1 2 3 t [s] Fig. 3 I2t versus time per diode Fig. 2 Surge overload current versus time per diode Fig. 1 Forward current versus voltage drop per diode 4 5 6 7 8 910 t [ms] 80 140 RthHA [K/W] 120 0.4 0.6 0.8 1.0 2.0 4.0 DC = 1 0.5 0.4 0.33 0.17 0.08 100 Ptot 80 DC = 1 0.5 0.4 0.33 0.17 0.08 60 IF(AV)M 40 [A] [W] 60 40 20 20 0 0 0 20 40 60 80 100 0 50 IF(AV)M [A] 100 0 150 50 100 150 200 TC [°C] Tamb [°C] Fig. 5 Max. forward current versus case temperature per diode Fig. 4 Power dissipation versusdirect output current and ambient temperature per diode 0.4 0.3 Constants for ZthJC calculation: ZthJC 0.2 [K/W] 0.1 i Rthi (K/W) ti (s) 1 0.023 0.0006 2 0.065 0.0038 3 0.094 0.0190 4 0.168 0.1300 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case versus time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190716b