DMA90U1800LB-TUB

DMA90U1800LB 3~ Rectifier Standard Rectifier VRRM = 1800 V I DAV = 90 A I FSM = 350 A ISOPLUS™ Surface Mount Power Device 3~ Rectifier Bridge Part number DMA90U1800LB Marking on Product: DMA90U1800LB Backside: isolated 4/5/6 7 8 9 1/2/3 Features / Advantages: Applications: Package: SMPD ● Rectifier diode ● Isolated back surface ● Low coupling capacity between pins and heatsink ● Enlarged creepage towards heatsink ● Application friendly pinout ● Low inductive current path ● High reliability ● Line rectifying 50/60 Hz ● Drives ● SMPS ● UPS ● Isolation Voltage: 3000 V~ ● Industry convenient outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a DMA90U1800LB Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1800 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.26 V 1.79 V 1.20 V IF = 30 A IF = 90 A IF = 30 A IF = 90 A TVJ = 150 °C 1.93 V T VJ = 175 °C 90 A TVJ = 175 °C 0.81 V 12.7 mΩ d=⅓ for power loss calculation only thermal resistance case to heatsink max. Unit 1900 V VR = 1800 V rectangular R thCH typ. VR = 1800 V TC = 110 °C Ptot min. 1.1 K/W 0.4 K/W TC = 25°C 135 W t = 10 ms; (50 Hz), sine TVJ = 45°C 350 A t = 8,3 ms; (60 Hz), sine VR = 0 V 380 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 320 A t = 10 ms; (50 Hz), sine TVJ = 45°C 615 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 600 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 450 A²s 425 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 11 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20190212a DMA90U1800LB Package Ratings SMPD Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 100 Unit A -55 175 °C -55 150 °C 150 °C 8.5 Weight FC 40 mounting force with clip d Spp/App t = 1 minute ~ UL Logo ~ Assembly line N mm terminal to backside 4.0 mm 3000 V 2500 V 50/60 Hz, RMS; IISOL ≤ 1 mA Part description ~ D M A 90 U 1800 LB Backside DCB Part number Date code 130 1.6 t = 1 second isolation voltage g terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. XXXXXXXXXX yywwA = = = = = = = Diode Standard Rectifier (up to 1800V) Current Rating [A] 3~ Rectifier Bridge Reverse Voltage [V] SMPD-B Data Matrix Code Digits 1 to 19: 20 to 23: 24 to 25: 26 to 31: 32: 33 to 36: Part # Date Code Assembly line Lot # Split Lot Individual # Pin 1 identifier Ordering Standard Alternative Ordering Number DMA90U1800LB-TUB DMA90U1800LB-TRR Equivalent Circuits for Simulation I V0 R0 Marking on Product DMA90U1800LB DMA90U1800LB * on die level Delivery Mode Tube Tape & Reel Code No. 517130 524497 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.81 V R0 max slope resistance * 10.1 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 20 200 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a DMA90U1800LB Outlines SMPD A(8:1) 2) 5,5 `0,1 (6x) 1 `0,05 0 + 0,15 2° c 0,1 0,5 ` 0,1 1) 18 `0,1 seating plane (3x) 2 `0,05 9 `0,1 2) 4 `0,05 8 9 32,7 ` 0,5 23 `0,2 2 `0,2 7 0,55 `0,1 4,85 ` 0,2 25 `0,2 3) c 0,05 6 5 4 A 3 2 1 Pin number 2,75 `0,1 5,5 ` 0,1 13,5 ` 0,1 16,25 `0,1 19 `0,1 Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 µm convex; position of DCB area in relation to plastic rim: ±25 µm (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.) cutting edges may be partially free of plating 4/5/6 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 7 8 9 1/2/3 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a DMA90U1800LB Rectifier 300 100 80 800 50 Hz 0.8 x V RRM 250 VR = 0 V 600 TVJ = 45°C 60 IF IFSM I 2t 200 [A] 400 [A] 40 TVJ = 45°C 2 TVJ = 150°C [A s] TVJ = 150°C 150 TVJ = 20 125°C 150°C 200 TVJ = 25°C 0 0.4 0.8 1.2 1.6 2.0 100 10-3 2.4 10-2 10-1 t [s] Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode 50 40 1 10 2 Fig. 3 I t vs. time per diode 100 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 0 t [ms] VF [V] 60 Ptot 100 DC = 0.6 KW 0.8 KW 30 1 KW 2 KW 4 KW 8 KW 1 80 0.5 0.4 [W] IF(AV)M 60 0.33 [A] 40 0.08 0.17 20 20 10 0 0 0 10 20 30 40 0 25 50 IdAVM [A] 75 100 125 150 175 0 25 50 75 100 125 150 175 TC [°C] TA [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 1.2 1.0 Constants for ZthJC calculation: 0.8 ZthJC 0.6 [K/W] 0.4 0.2 0.0 1 10 100 1000 i Rth (K/W) ti (s) 1 0.030 0.0003 2 0.072 0.0045 3 0.092 0.0530 4 0.606 0.0520 5 0.300 0.4000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a