DSA120X150LB-TUB

DSA120X150LB Schottky Diode Gen ² VRRM = 150 V I FAV = 2x VF = 75 A 0.74 V High Performance Schottky Diode Low Loss and Soft Recovery Parallel legs Part number DSA120X150LB Marking on Product: DSA120X150LB Backside: isolated 7 8 = n/c 9 6 5 4 3 2 1 Features / Advantages: Applications: Package: SMPD ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Isolation Voltage: 3000 V~ ● Industry convenient outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212f DSA120X150LB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 150 V IR reverse current, drain current VF forward voltage drop min. typ. VR = 150 V TVJ = 25°C 1 mA VR = 150 V TVJ = 125°C 5 mA IF = TVJ = 25°C 0.93 V 1.13 V 0.74 V 60 A I F = 120 A IF = TVJ = 125 °C 60 A I F = 120 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 135 °C rectangular 0.95 V T VJ = 175 °C 75 A TVJ = 175 °C 0.51 V 1.3 mΩ d = 0.5 for power loss calculation only 0.8 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved max. Unit 150 V K/W 0.40 TC = 25°C 24 V f = 1 MHz 185 700 481 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20190212f DSA120X150LB Package Ratings SMPD Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 100 Unit A -55 175 °C -55 150 °C 150 °C 8.5 Weight FC 40 mounting force with clip d Spp/App t = 1 minute ~ UL Logo ~ Assembly line N mm terminal to backside 4.0 mm 3000 V 2500 V 50/60 Hz, RMS; IISOL ≤ 1 mA Part description ~ D S A 120 X 150 LB Backside DCB Part number Date code 130 1.6 t = 1 second isolation voltage g terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. XXXXXXXXXX yywwA = = = = = = = Diode Schottky Diode low VF Current Rating [A] Parallel legs Reverse Voltage [V] SMPD-B Data Matrix Code Digits 1 to 19: 20 to 23: 24 to 25: 26 to 31: 32: 33 to 36: Part # Date Code Assembly line Lot # Split Lot Individual # Pin 1 identifier Ordering Standard Alternative Ordering Number DSA120X150LB-TUB DSA120X150LB-TRR Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA120X150LB DSA120X150LB * on die level Delivery Mode Tube Tape & Reel Code No. 524766 517173 T VJ = 175 °C Schottky V 0 max threshold voltage 0.51 V R0 max slope resistance * 1.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 20 200 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212f DSA120X150LB Outlines SMPD A(8:1) 2) 5,5 `0,1 (6x) 1 `0,05 0 + 0,15 2° c 0,1 0,5 ` 0,1 1) 18 `0,1 seating plane (3x) 2 `0,05 9 `0,1 2) 4 `0,05 8 9 32,7 ` 0,5 23 `0,2 2 `0,2 7 0,55 `0,1 4,85 ` 0,2 25 `0,2 3) c 0,05 6 5 4 A 3 2 1 Pin number 2,75 `0,1 5,5 ` 0,1 13,5 ` 0,1 16,25 `0,1 19 `0,1 Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 µm convex; position of DCB area in relation to plastic rim: ±25 µm (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.) cutting edges may be partially free of plating 7 8 = n/c 9 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 6 5 4 3 2 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212f DSA120X150LB Schottky 150 10000 100 TVJ=175°C 10 120 150°C 1 IF [A] 90 IR [mA] 0.1 TVJ = 150°C 125°C 25°C 60 CT 125°C [pF] 100°C 1000 75°C 0.01 30 50°C 0.001 25°C TVJ = 25°C 100 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150 VR [V] VF [V] Fig. 1 Maximum forward voltage drop characteristics 50 100 150 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR 120 0 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 90 IRMS = 100 A 100 DC 80 60 d = 0.5 IF(AV) P(AV) d= DC 0.5 0.33 0.25 0.17 0.08 60 [W] [A] 40 30 20 0 0 0 50 100 150 200 0 TC [°C] 20 40 60 80 100 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss @ TJ = 175°C 1.4 1.2 1.0 0.8 ZthJH 0.6 [K/W] 0.4 0.2 0.0 0.001 Note: All curves are per diode 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212f