DSEP6-06AS-TRL

DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V = 20 ns trr with soft recovery VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA (DPAK) Cathode 6P060AS Cathode (Flange) Anode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 152°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM IFSM A TVJ = 45°C; t = 10 ms EAS IAR Maximum Ratings 26 6 12 A A A (50 Hz), sine 40 TVJ = 25°C; non-repetitive IAS = 0.8 A; L = 180 µH 0.1 mJ VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A -40...+175 175 -40...+150 °C °C °C TVJ TVJM Tstg Ptot TC = 25°C 55 W Weight typ. 0.3 g Symbol Conditions Features • • • • • Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Applications • Anti saturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating and melting • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages Characteristic Values typ. IR TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM VF IF = 6 A; TVJ = 150°C TVJ = 25°C RthJC max. 50 0.2 µA mA 1.33 2.02 V V 2.8 K/W trr IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C 20 tbd ns IRM VR = 100 V; IF = 10 A; -diF/dt = 100 A/µs TVJ = 100°C 3.5 4.4 A • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses • Operating at lower temperature or space saving by reduced cooling Dimensions see pages D4 - 85-86 ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 0611 Data according to IEC 60747 1-2 DSEP 6-06AS 10 30 1000 A nC 8 800 IF VR = 300V VR = 300V A IRM Qr TVJ =150°C 6 TVJ = 100°C TVJ = 100°C 20 600 TVJ =100°C TVJ = 25°C 4 400 2 IF = 12A IF = 6A IF = 3A IF = 12A IF = 6A IF = 3A 10 200 0 0.0 0.5 1.0 1.5 0 100 2.0 V 0 A/µs 1000 -diF/dt VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 110 1.6 trr Kf 90 0.8 80 IRM Qr 400 600 A/µs 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 1.2 µs V VR = 300V tfr 100 1.2 200 20 TVJ = 100°C ns 0.4 0 15 VFR IF = 12A IF = 6A IF = 3A 0.9 VFR tfr 10 0.6 5 0.3 70 TVJ = 100°C IF = 6A 0.0 60 0 40 80 120 °C 160 0 0 200 TVJ 400 600 800 1000 A/µs -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 0 200 400 0.0 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR + tfr versus diF/dt 10 K/W 1 ZthJC 0.1 0.01 0.001 0.00001 DSEP 6-06AS 0.0001 0.001 0.01 s 0.1 NOTE: Fig. 2 to Fig. 6 shows typical values 1 t IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 0611 Fig. 7 Transient thermal resistance junction to case 2-2