DSEP60-06AT-TUB

DSEP60-06AT HiPerFRED VRRM = 600 V I FAV = 60 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP60-06AT Marking on Product: DSEP60-06AT Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-268AA (D3Pak) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c DSEP60-06AT Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 IR reverse current, drain current VR = 600 V TVJ = 25°C 650 µA VR = 600 V TVJ = 150°C 2.5 mA IF = TVJ = 25°C 2.04 V 2.33 V 1.39 V VF forward voltage drop min. 60 A typ. I F = 120 A IF = TVJ = 150 °C 60 A I F = 120 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 130 °C rectangular max. Unit 600 V V 1.70 V T VJ = 175 °C 60 A TVJ = 175 °C 0.95 V 5 mΩ d = 0.5 for power loss calculation only 0.45 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 400 V f = 1 MHz TVJ = 25°C 67 pF TVJ = 25 °C 8 A TVJ = 100 °C 13 A TVJ = 25 °C 35 ns TVJ = 100 °C 110 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.15 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 60 A; VR = 300 V -di F /dt = 200 A/µs 330 600 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20190220c DSEP60-06AT Package Ratings TO-268AA (D3Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 1) 5 Weight FC 1) 20 mounting force with clip g 120 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking Logo IXYS Part No. Assembly Line Zyyww Assembly Code abcd Date Code Ordering Standard Ordering Number DSEP60-06AT-TUB Similar Part DSEP60-06A DHG60I600HA DPH30IS600HI Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP60-06AT Package TO-247AD (2) TO-247AD (2) ISOPLUS247 (2) * on die level Delivery Mode Tube Code No. 509748 Voltage class 600 600 600 T VJ = 175 °C Fast Diode V 0 max threshold voltage 0.95 V R0 max slope resistance * 2.4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c DSEP60-06AT Outlines TO-268AA (D3Pak) Dim. A A1 A2 b b2 C C2 D D1 E E1 e H L L1 L2 L3 L4 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Millimeter min max 4.90 5.10 2.70 2.90 0.02 0.25 1.15 1.45 1.90 2.10 0.40 0.65 1.45 1.60 13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches min max 0.193 0.201 0.106 0.114 0.001 0.100 0.045 0.057 0.075 0.083 0.016 0.026 0.057 0.063 0.543 0.551 0.488 0.500 0.624 0.632 0.524 0.535 0.215 BSC 0.736 0.752 0.094 0.106 0.047 0.055 0.039 0.045 0.100 BSC 0.150 0.161 2/4 Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c DSEP60-06AT Fast Diode 150 4000 80 TVJ = 100°C TVJ = 100°C VR = 300 V 120 VR = 300 V 3000 IF 90 Qr TVJ = 150°C 100°C 25°C [A] 60 60 IRM IF = 120 A 60 A 30 A 2000 [nC] IF = 120 A 60 A 30 A 40 [A] 1000 20 30 0 0 1 0 100 2 0 1000 VF [V] 0 -diF /dt [A/µs] Fig. 1 Forward current IF versus VF 140 600 800 1000 20 TVJ = 100°C 1.6 TVJ = 100°C VR = 150 V 130 400 -diF /dt [A/µs] Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 2.0 200 IF = 60 A 1.5 15 IF = 120 A 60 A 30 A 120 trr Kf 1.0 110 tfr 10 0.8 [µs] 100 IRM 5 Qr 0.4 VFR 90 0.0 80 0 VFR [V] [ns] 0.5 1.2 40 80 120 160 tfr 0 0 200 400 600 800 1000 0 -diF /dt [A/µs] TVJ [°C] Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 200 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 0.5 0.4 Constants for ZthJC calculation: ZthJC 0.3 [K/W] 0.2 0.1 i Rthi (K/W) ti (s) 1 0.0050 0.0001 2 0.0550 0.0010 3 0.1750 0.0140 4 0.2150 0.2300 0.0 1 10 100 1000 10000 t [ms] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c