DSI30-12AS-TRL

DSI30-12AS Standard Rectifier VRRM = 1200 V I FAV = 30 A VF = 1.25 V Single Diode Part number DSI30-12AS Marking on Product: DSI30-12AS Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190220b DSI30-12AS Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved max. Unit 1300 V 1200 V TVJ = 25°C 40 µA VR = 1200 V TVJ = 150°C 1.5 mA TVJ = 25°C 1.29 V 1.60 V 1.25 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 °C TC = 130 °C 1.66 V T VJ = 175 °C 30 A TVJ = 175 °C 0.82 V 14.1 mΩ d = 0.5 for power loss calculation only R thCH typ. VR = 1200 V rectangular Ptot min. 0.9 K/W K/W 0.25 TC = 25°C 160 W t = 10 ms; (50 Hz), sine TVJ = 45°C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45°C 450 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 440 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 325 A²s 315 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 10 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20190220b DSI30-12AS Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 35 Unit A -40 175 °C -40 150 °C 150 °C 1.5 Weight FC 1) typ. 1) 20 mounting force with clip g 60 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking XXXXXXXXX Part Number IXYS yywwZ Logo Date Code Location 123456 Lot# Ordering Standard Alternative Ordering Number DSI30-12AS-TRL DSI30-12AS-TUB Similar Part DSI30-12A DSI30-12AC DSI30-16AS DSI30-16A Package TO-220AC (2) ISOPLUS220AC (2) TO-263AB (D2Pak) (2) TO-220AC (2) DSI30-08AS DSI30-08A DSI30-08AC TO-263AB (D2Pak) (2) TO-220AC (2) ISOPLUS220AC (2) Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tape & Reel Tube Quantity 800 50 Code No. 507511 470988 Voltage class 1200 1200 1600 1600 800 800 800 T VJ = 175°C Rectifier V 0 max threshold voltage 0.82 R0 max slope resistance * 11 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product DSI30-12AS DSI30-12AS V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20190220b DSI30-12AS Outlines TO-263 (D2Pak) Dim. W A Supplier Option D1 L1 c2 A1 H D E A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) W Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 2/4 Data according to IEC 60747and per semiconductor unless otherwise specified 20190220b DSI30-12AS Rectifier 60 250 500 50 Hz, 80% VRRM 50 VR = 0 V 400 40 200 IFSM IF 300 TVJ = 45°C 30 TVJ = 45°C 2 It [A] [A] 20 TVJ = 125°C 200 150 TVJ = 150°C 2 150°C [A s] TVJ = 150°C 100 10 TVJ = 25°C 0 0.6 0.8 1.0 1.2 1.4 1.6 100 0.001 1.8 0 0.01 0.1 Fig. 1 Forward current versus voltage drop per diode 3 4 5 6 7 8 91 0 t [ms] 2 Fig. 2 Surge overload current 50 RthHA: 0.6 K/W 0.8 K/W 1 K/W 2 K/W 4 K/W 8 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 Ptot 30 2 1 t [s] VF [V] 40 1 Fig. 3 I t versus time per diode 40 30 IF(AV)M DC = 1 0.5 0.4 0.33 0.17 0.08 20 [A] [W] 20 10 10 0 0 0 10 20 30 0 50 100 150 200 0 50 Tamb [°C] IF(AV)M [A] 100 150 200 TC [°C] Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs. case temperature 1.0 0.8 Constants for ZthJC calculation: 0.6 i Rthi (K/W) ZthJC ti (s) 0.4 1 0.03 0.0004 [K/W] 2 0.08 0.002 3 0.2 0.003 4 0.39 0.03 5 0.2 0.29 0.2 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190220b