DSSK28-006BS-TRL

DSSK28-006BS Schottky Diode VRRM = 60 V I FAV = 2x 15 A VF = 0.52 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSSK28-006BS Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20211013a DSSK28-006BS Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 60 V IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. VR = 60 V TVJ = 25°C 10 mA 60 V TVJ = 100°C 50 mA TVJ = 25°C 0.56 V 0.78 V 0.52 V IF = 15 A IF = 30 A IF = 15 A IF = 30 A TVJ = 125 °C TC = 135 °C 0.69 V T VJ = 150 °C 15 A TVJ = 150 °C 0.36 V 9.4 mΩ d = 0.5 for power loss calculation only 1.4 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2021 IXYS all rights reserved max. Unit 60 V VR = rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.25 TC = 25°C 12 V f = 1 MHz 90 300 449 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20211013a DSSK28-006BS Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 150 °C -55 125 °C 150 °C 1.5 Weight FC 20 mounting force with clip g 60 N Product Marking XXXXXXXXX Part Number IXYS yywwZ Logo Date Code Location 123456 Lot# Ordering Standard Alternative Ordering Number DSSK28-006BS-TRL DSSK28-006BS-TUB Similar Part DSB30C60PB DSB60C60PB DSB60C60HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSSK28-006BS-TRL DSSK28-006BS Package TO-220AB (3) TO-220AB (3) TO-247AD (3) * on die level Delivery Mode Tape & Reel Tube Code No. 523748 484016 Voltage class 60 60 60 T VJ = 150°C Schottky V 0 max threshold voltage 0.36 V R0 max slope resistance * 6.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Quantity 800 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20211013a DSSK28-006BS Outlines TO-263 (D2Pak) Dim. W A A1 H D E Supplier Option D1 L1 c2 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) E1 W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) mm (Inches) 2x b A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20211013a DSSK28-006BS Schottky 1000 40 2000 TVJ=150°C 100 10 IF IR 10 [A] [mA] 1 100°C CT 75°C 0.1 25°C 100 0.01 0.2 0.4 TVJ = 25°C [pF] 50°C TVJ = 150°C 125°C 25°C 1 0.0 1000 125°C 0.6 0.8 0 10 20 30 40 50 60 VR [V] VF [V] 40 10 20 30 40 50 60 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 1 Max. forward voltage drop characteristics 0 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 25 20 30 DC IF(AV) P(AV) 15 d = 0.5 d= DC 0.5 0.33 0.25 0.17 0.08 20 [A] [W] 10 10 5 0 0 0 50 100 150 200 0 5 10 15 20 25 30 35 IF(AV) [A] TC [°C] Fig. 4 Average forward current IF(AV) vs. case temp. TC Fig. 5 Forward power loss characteristics 2 1 D = 0.5 0.33 0.25 ZthJC 0.17 0.08 0.1 [K/W] Single Pulse 0.01 0.0001 Note: All curves are per diode 0.001 0.01 0.1 1 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20211013a