FMM110-015X2F

Advance Technical Information TrenchT2TM HiperFET N-Channel Power MOSFET FMM110-015X2F 3 3 5 5 4 4 VDSS ID25 T1 RDS(on) trr(typ) = = ≤ = 150V 53A 20mΩ 85ns Phase Leg Topology 1 1 2 2 T2 ISOPLUS i4-PakTM Symbol TJ TJM Tstg VISOLD TL TSOLD FC Test Conditions Maximum Ratings -55 ... +175 175 -55 ... +175 °C °C °C ~V °C °C N/lb. Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Low QG Low Drain-to-Tab Capacitance Low Package Inductance Advantages Easy to Mount Space Savings High Power Density Applications DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications 1 Isolated Tab 50/60HZ, RMS, t = 1min, Leads-to-Tab 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force 2500 300 260 20..120 / 4.5..27 5 Features Symbol VDSS VDGR VGSM ID25 IDM IA EAS dV/dt PD Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 150 150 ± 30 53 300 55 800 10 180 V V V A A A mJ V/ns W Symbol CP dS , d A dS , d A Weight Test Conditions Coupling Capacitance Between Shorted Pins and Mounting Tab in the Case Pin - Pin Pin - Backside Metal Characteristic Values Min. Typ. Max. 40 1.7 5.5 9 pF mm mm g © 2009 IXYS CORPORATION, All Rights Reserved DS100145(04/09) FMM110-015X2F Symbol Test Conditions2 (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Source-Drain Diode Symbol IS ISM VSD trr IRM QRM Test Conditions3 VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 100A, VGS = 0V, Note 1 IF = 55A, -di/dt = 100A/μs VR = 100V, VGS = 0V 85 6.80 0.29 0.15 VGS= 10V, VDS = 0.5 VDSS, ID = 55A Resistive Switching Times VGS = 10V, VDS = 0.5 VDSS, ID = 55A RG = 3.3Ω (External) VGS = 0V, VDS = 25 V, f = 1 MHz VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±20 V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 55A, Note 1 VDS = 10V, ID = 55A, Note 1 75 115 8600 685 77 33 16 33 18 150 42 46 TJ = 150°C Characteristic Values Min. Typ. Max. 150 2.5 4.5 ± 200 V V nA ISOPLUS i4-PakTM Outline 2 μA 500 μA 20 mΩ S pF pF pF ns ns ns ns nC nC nC 0.83 °C/W °C/W Ref: IXYS CO 0077 R0 Characteristic Values TJ = 25°C Unless Otherwise Specified) Min. Typ. Max. 110 440 1.3 A A V ns A μC Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 FMM110-015X2F Fig. 1. Output Characteristics @ 25ºC 110 100 90 80 VGS = 15V 10V 9V 8V 7V 350 300 250 VGS = 15V 10V 8V Fig. 2. Extended Output Characteristics @ 25ºC ID - Amperes ID - Amperes 70 60 50 40 30 20 10 0 0.0 0.2 0.4 0.6 0.8 200 7V 150 100 50 0 6V 5V 6V 1.0 1.2 1.4 0 2 4 6 8 10 12 14 16 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 150ºC 110 100 90 80 VGS = 15V 10V 9V 8V 3.4 3.0 2.6 Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature VGS = 10V RDS(on) - Normalized ID - Amperes 70 60 50 40 30 20 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 7V 2.2 1.8 1.4 1.0 0.6 0.2 I D = 110A I D = 55A 6V 2.8 3.2 3.6 -50 -25 0 25 50 75 100 125 150 175 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current 5.0 4.5 4.0 VGS = 10V 15V - - - TJ = 175ºC 120 110 100 90 Fig. 6. Drain Current vs. Case Temperature RDS(on) - Normalized 3.5 ID - Am peres TJ = 25ºC 80 70 60 50 40 30 20 10 0 3.0 2.5 2.0 1.5 1.0 0.5 0 50 100 150 200 250 300 -50 -25 0 25 50 75 100 125 150 175 ID - Amperes TC - Degrees Centigrade © 2009 IXYS CORPORATION, All Rights Reserved FMM110-015X2F Fig. 7. Input Admittance 160 140 120 180 160 140 Fig. 8. Transconductance TJ = - 40ºC 100 80 60 40 20 0 3.4 3.8 4.2 4.6 g f s - Siemens ID - Amperes TJ = 150ºC 25ºC - 40ºC 120 100 80 60 40 20 0 25ºC 150ºC 5.0 5.4 5.8 6.2 6.6 0 20 40 60 80 100 120 140 160 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 350 300 250 Fig. 10. Gate Charge 10 9 8 7 VDS = 75V I D = 55A I G = 10mA IS - Amperes 200 150 100 50 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 TJ = 150ºC TJ = 25ºC VGS - Volts 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 100,000 1,000.0 Fig. 12. Forward-Bias Safe Operating Area RDS(on) Limit 100.0 25µs 100µs 10.0 f = 1 MHz Capacitance - PicoFarads 10,000 Ciss 1,000 Coss 100 Crss 10 0 5 10 15 20 25 30 35 40 ID - Amperes 1ms 1.0 TJ = 175ºC TC = 25ºC Single Pulse 0.1 1 10 100 1000 100ms 10ms VDS - Volts VDS - Volts IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_110N15T2(61)4-23-09-A FMM110-015X2F Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 20 19 18 RG = 3.3Ω VGS = 10V VDS = 75V 19 20 RG = 3.3Ω VGS = 10V VDS = 75V Fig. 14. Resistive Turn-on Rise Time vs. Drain Current t r - Nanoseconds t r - Nanoseconds 17 16 15 I 14 13 12 25 35 45 55 65 75 85 95 105 115 125 D 18 TJ = 125ºC I D = 110A 17 = 55A 16 TJ = 25ºC 15 14 55 60 65 70 75 80 85 90 95 100 105 110 TJ - Degrees Centigrade ID - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 280 240 200 160 120 80 40 0 2 4 6 8 10 12 14 16 18 20 I D = 55A 90 28 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 80 tr VDS = 75V td(on) - - - - TJ = 125ºC, VGS = 10V 80 tf 26 VDS = 75V td(off) - - - 70 RG = 3.3Ω, VGS = 10V t d(on) - Nanoseconds t r - Nanoseconds t f - Nanoseconds 70 I D = 110A 60 50 40 30 20 t d(off) - Nanoseconds 24 60 22 I D = 55A, 110A 20 50 40 18 30 16 25 35 45 55 65 75 85 95 105 115 20 125 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 23 80 120 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 250 tf 22 VDS = 75V td(off) - - - 70 100 tf VDS = 75V td(off) - - - 210 RG = 3.3Ω, VGS = 10V TJ = 125ºC, VGS = 10V t d(off) - Nanoseconds t d(off) - Nanoseconds t f - Nanoseconds t f - Nanoseconds 21 60 80 I D = 55A 170 20 TJ = 125ºC TJ = 25ºC 50 60 130 19 40 40 I 20 D 90 = 110A 50 18 30 17 55 60 65 70 75 80 85 90 95 100 105 20 110 0 2 4 6 8 10 12 14 16 18 20 10 ID - Amperes RG - Ohms © 2009 IXYS CORPORATION, All Rights Reserved FMM110-015X2F Fig. 19. Maximum Transient Thermal Impedance 1.00 Z (th)JC - º C / W 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_110N15T2(61)4-23-09-A