FMM150-0075X2F

Advance Technical Information TrenchT2TM HiperFET N-Channel Power MOSFET FMM150-0075X2F 3 3 5 5 4 4 VDSS ID25 T1 RDS(on) trr(typ) = = ≤ = 75V 120A 5.8mΩ 66ns Phase Leg Topology 1 1 2 2 T2 ISOPLUS i4-PakTM Symbol TJ TJM Tstg VISOL TL TSOLD FC Test Conditions Maximum Ratings -55 ... +175 175 -55 ... +175 °C °C °C ~V °C °C N/lb. Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Low QG Low Drain-to-Tab Capacitance Low Package Inductance Advantages Easy to Mount Space Savings High Power Density Applications DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications 1 Isolated Tab 50/60HZ, RMS, t = 1min, Leads-to-Tab 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force 2500 300 260 20..120 / 4.5..27 5 Features Symbol VDSS VDGR VGSM ID25 IDM IA EAS dV/dt PD Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 75 75 ± 30 120 500 115 850 20 170 V V V A A A mJ V/ns W Symbol CP dS , d A dS , d A Weight Test Conditions Coupling Capacitance Between Shorted Pins and Mounting Tab in the Case Pin - Pin Pin - Backside Metal Characteristic Values Min. Typ. Max. 40 1.7 5.5 9 pF mm mm g © 2009 IXYS CORPORATION, All Rights Reserved DS100186(08/09) FMM150-0075X2F Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Source-Drain Diode Symbol IS ISM VSD trr IRM QRM Test Conditions VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 75A, VGS = 0V, Note 1 IF = 115A, -di/dt = 100A/μs VR = 37V, VGS = 0V 66 4.4 145 0.15 VGS= 10V, VDS = 0.5 VDSS, ID = 100A Resistive Switching Times VGS = 10V, VDS = 0.5 VDSS, ID = 115A RG = 2Ω (External) VGS = 0V, VDS = 25 V, f = 1 MHz VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±20 V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 100A, Note 1 VDS = 10V, ID = 60A, Note 1 50 83 10.5 1165 125 23 18 33 15 178 37 55 TJ = 150°C Characteristic Values Min. Typ. Max. 75 2.0 4.0 ± 200 V V nA ISOPLUS i4-PakTM Outline 25 μA 250 μA 5.8 mΩ S nF pF pF ns ns ns ns nC nC nC 0.88 °C/W °C/W Ref: IXYS CO 0077 R0 Characteristic Values TJ = 25°C Unless Otherwise Specified) Min. Typ. Max. 230 900 1.5 A A V ns A nC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 FMM150-0075X2F Fig. 1. Output Characteristics @ T J = 25ºC 160 140 120 VGS = 15V 10V 8V 7V 6V 360 320 280 240 VGS = 15V 10V 8V Fig. 2. Extended Output Characteristics @ T J = 25ºC 7V ID - Amperes ID - Amperes 100 80 60 40 20 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 200 6V 160 120 80 5V 5V 4V 40 0 0.8 0.9 1.0 0 1 2 4V 3 4 5 6 7 8 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 150ºC 160 140 120 VGS = 15V 10V 8V 7V 6V 2.2 2.0 1.8 Fig. 4. RDS(on) Normalized to ID = 75A Value vs. Junction Temperature VGS = 10V R DS(on) - N ormalized ID - Amperes 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.6 1.4 1.2 1.0 0.8 0.6 I D = 150A I D = 75A 5V 4V 3V 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 75A Value vs. Drain Current 2.4 2.2 2.0 TJ = 175ºC VGS = 10V 15V - - - 140 120 100 Fig. 6. Drain Current vs. Case Temperature R DS(on) - N ormalized ID - Amperes TJ = 25ºC 1.8 1.6 1.4 1.2 1.0 0.8 0 50 100 150 200 250 300 350 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 175 ID - Amperes TC - Degrees Centigrade © 2009 IXYS CORPORATION, All Rights Reserved FMM150-0075X2F Fig. 7. Input Admittance 160 140 120 100 80 60 40 20 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 TJ = 150ºC 25ºC - 40ºC 140 120 100 TJ = - 40ºC Fig. 8. Transconductance g f s - Siemens 25ºC 150ºC ID - Amperes 80 60 40 20 0 0 20 40 60 80 100 120 140 160 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 10 9 250 8 7 VDS = 38V I D = 100A I G = 10mA Fig. 10. Gate Charge IS - Amperes 200 VGS - Volts TJ = 25ºC 1.0 1.2 1.4 1.6 1.8 6 5 4 3 2 1 150 TJ = 150ºC 100 50 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 140 160 180 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 100,000 1000.0 Fig. 12. Forward-Bias Safe Operating Area RDS(on) Limit 25µs 100µs f = 1 MHz Capacitance - PicoFarads Ciss 10,000 100.0 ID - Amperes 10.0 1ms Coss 1,000 10ms 1.0 TJ = 175ºC TC = 25ºC Single Pulse DC 100ms Crss 100 0 5 10 15 20 25 30 35 40 0.1 1 10 100 VDS - Volts VDS - Volts IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: FMM150-0075X2F(68)8-28-09 FMM150-0075X2F Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 30 RG = 2Ω , VGS = 10V VDS = 38V 25 20 22 RG = 2Ω , VGS = 10V VDS = 38V Fig. 14. Resistive Turn-on Rise Time vs. Drain Current t r - N anoseconds t r - N anoseconds 20 I D = 230A 18 TJ = 25ºC 16 15 I D = 115A 14 10 12 TJ = 125ºC 5 25 35 45 55 65 75 85 95 105 115 125 10 110 120 130 140 150 160 170 180 190 200 210 220 230 TJ - Degrees Centigrade ID - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 50 45 40 55 30 28 26 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 65 50 tr VDS = 38V td(on) - - - I D = 230A, 115A tf VDS = 38V td(off) - - - - 60 55 TJ = 125ºC, VGS = 10V 45 RG = 2Ω, VGS = 10V t d(off) - N anoseconds t r - N anoseconds 35 30 25 20 15 10 5 2 4 6 8 10 12 14 16 40 35 30 25 20 15 10 t f - N anoseconds 24 22 20 18 16 14 12 10 25 35 45 55 65 75 85 95 105 115 I D = 230A I D = 115A 50 45 40 35 30 25 20 15 125 t d(on) - N anoseconds RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 26 24 22 60 280 240 200 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 280 tf VDS = 38V td(off) - - - - RG = 2Ω, VGS = 10V 55 50 TJ = 125ºC 45 40 35 30 TJ = 25ºC 25 20 230 tf VDS = 38V td(off) - - - - TJ = 125ºC, VGS = 10V 240 t d(off) - Nanoseconds 200 160 t d(off) - Nanoseconds t f - Nanoseconds 20 18 16 14 12 10 110 t f - Nanoseconds 160 I D = 115A 120 80 40 I 0 2 4 6 8 10 12 14 16 D 120 80 40 = 230A 0 120 130 140 150 160 170 180 190 200 210 220 ID - Amperes RG - Ohms © 2009 IXYS CORPORATION, All Rights Reserved FMM150-0075X2F Fig. 19. Maximum Transient Thermal Impedance 1.00 Z (th)JC - º C / W 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: FMM150-0075X2F(68)8-28-09