FMM60-02TF

Advance Technical Information Trench Gate HiperFET N-Channel Power MOSFET FMM60-02TF 3 3 5 5 VDSS ID25 T1 RDS(on) trr(typ) = 200V = 33A ≤ 40mΩ = 82ns Phase Leg Topology 4 4 T2 1 1 2 2 ISOPLUS i4-PakTM Symbol TJ TJM Tstg VISOLD TL TSOLD FC Test Conditions Maximum Ratings -55 ... +150 150 -55 ... +150 °C °C °C ~V °C °C N/lb. Features Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rated Low QG Low Drain-to-Tab capacitance Low package inductance 1 Isolated Tab 50/60HZ, RMS, t = 1min, leads-to-tab 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force 2500 300 260 20..120 / 4.5..27 5 Symbol VDSS VDGR VGSM ID25 IDM IA EAS dV/dt PD Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 200 200 ± 30 33 150 5 1 10 125 V V V A A A J V/ns W Advantages Low gate drive requirement High power density Fast intrinsic rectifier Low drain to ground capacitance Fast switching Applications DC and AC motor drives UPS, solar and wind power inverters Synchronous rectifiers Multi-phase DC to DC converters Industrial battery chargers Switching power supplies Symbol CP dS , d A dS , d A Weight Test Conditions Coupling capacitance between shorted pins and mounting tab in the case pin - pin pin - backside metal Characteristic Values Min. Typ. Max. 40 1.7 5.5 9 pF mm mm g © 2008 IXYS CORPORATION, All rights reserved DS100048(09/08) FMM60-02TF Symbol Test Conditions2 (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Source-Drain Diode Symbol IS ISM VSD trr IRM QRM Test Conditions3 VGS = 0V Repetitive, pulse width limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 82 15.3 0.63 0.15 VGS= 10V, VDS = 0.5 VDSS, ID = 30A Resistive Switching Times VGS = 10V, VDS = 0.5 VDSS, ID = 30A RG = 5Ω (External) VGS = 0V, VDS = 25 V, f = 1 MHz VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±20 V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 30A, Note 1 VDS = 10V, ID = 60A, Note 1 40 TJ = 125°C 32 62 3700 520 37 39 46 75 42 90 33 21 Characteristic Values Min. Typ. Max. 200 2.5 4.5 ± 200 V V nA ISOPLUS i4-PakTM Outline 5 μA 250 μA 40 mΩ S pF pF pF ns ns ns ns nC nC nC 1.0 °C/W °C/W Ref: IXYS CO 0077 R0 Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. 33 150 1.5 A A V ns A μC Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2