Advance Technical Information
PolarTM P & N-Channel Power MOSFET Common Drain Topology
FMP26-02P
VDSS
3 4 5 4 3
P CH.
- 200V - 17A 170mΩ 240ns
N CH.
200V 26A 60mΩ 150ns
T1
ID25 RDS(on)
T2
1 1 2 2
Symbol TJ TJM Tstg VISOLD TL TSOLD FC 50/60HZ, RMS, t = 1min, leads-to-tab 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force Test Conditions Maximum Ratings -55 ... +150 150 -55 ... +150 2500 300 260 20..120 / 4.5..27 °C °C °C ~V °C °C N/lb.
trr(typ)
ISOPLUS i4-PakTM
1
Isolated Tab
5
Symbol CP dS , d A dS , d A Weight Test Conditions Coupling capacitance between shorted pins and mounting tab in the case pin - pin pin - backside metal 1.7 5.5 9 Characteristic Values Min. Typ. Max. 40 pF mm mm g
Features Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rated Low QG Low Drain-to-Tab capacitance Low package inductance Advantages
P - CHANNEL
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings - 200 - 200 ± 20 ± 30 -17 - 70 - 26 1.5 125 V V V V A A A J W
Low gate drive requirement High power density Low drain to ground capacitance Fast switching Applications DC and AC motor drives Class AB audio amplifiers Multi-phase DC to DC converters Industrial battery chargers Switching power supplies
© 2008 IXYS CORPORATION, All rights reserved
DS100033(08/08)
FMP26-02P
Symbol Test Conditions2 (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS= -10V, VDS = 0.5 VDSS, ID = -13A Resistive Switching Times VGS = -10V, VDS = 0.5 RG = 3.3Ω (External) VDSS, ID = -13A VGS = 0V, VDS = - 25 V, f = 1 MHz VGS = 0V, ID = - 250μA VDS = VGS, ID = - 250μA VGS = ±20 V, VDS = 0V VDS = VDSS, VGS = 0V VGS = -10V, ID = -13A, Note 1 VDS = -10V, ID = -13A, Note 1 10 17 2740 540 100 18 33 46 21 56 18 20 TJ = 125°C Characteristic Values Min. Typ. Max. - 200 - 2.5 - 4.5 ± 100 V V nA ISOPLUS i4-PakTM Outline
-10 μA - 150 μA 170 mΩ S pF pF pF ns ns ns ns nC nC nC 1.0 °C/W °C/W
Ref: IXYS CO 0077 R0
Drain-Source Diode Symbol IS ISM VSD trr QRM IRM Test Conditions2 VGS = 0V
Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. - 17 -104 - 3.2 240 2.2 -18 A A V ns μC A
Repetitive, pulse width limited by TJM IF = -13A, VGS = 0 V, Note 1 IF = -13A, di/dt = 100 A/μs VR = -100V, VGS = 0V
ΙΞΨΣ ρεσερϖεσ τηε ριγητ το χηανγε λιμιτσ, τεστ χονδιτιονσ, ανδ διμενσιονσ.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
FMP26-02P
N - CHANNEL
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 26 120 50 1 125 V V V V A A A J W
Symbol Test Conditions2 (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VGS= 10V, VDS = 0.5 VDSS, ID = 25A Resistive Switching Times VGS = 10V, VDS = 0.5 VDSS, ID = 25A RG = 10Ω (External) VGS = 0V, VDS = 25 V, f = 1 MHz VGS = 0V, ID = 250 μA VDS = VGS, ID = 250μA VGS = ±20 V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 25A, (Note 1) VDS = 10V, ID = 25A, (Note 1) TJ = 150°C
Characteristic Values Min. Typ. Max. 200 2.5 5.0 ± 100 V V nA
25 μA 250 μA 60 mΩ 12 23 2720 490 105 26 35 70 30 70 17 37 S pF pF pF ns ns ns ns nC nC nC 1.0 °C/W 0.15 °C/W
© 2008 IXYS CORPORATION, All rights reserved
FMP26-02P
Source-Drain Diode Symbol IS ISM VSD trr QRM Test Conditions3 VGS = 0V Repetitive, pulse width limited by TJM IF = 50A, VGS = 0V, Note 1 IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 150 2.0 Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. 26 120 1.5 A A V ns μC
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
ΙΞΨΣ ρεσερϖεσ τηε ριγητ το χηανγε λιμιτσ, τεστ χονδιτιονσ, ανδ διμενσιονσ.
