FMP36-015P

Advance Technical Information PolarTM P & N-Channel Power MOSFETs Common Drain Topology FMP36-015P VDSS 3 4 5 4 3 P CH. - 150V - 22A 110mΩ 228ns N CH. 150V 36A 40mΩ 150ns T1 ID25 RDS(on) T2 1 1 2 2 Symbol TJ TJM Tstg TL VISOL FC 1.6mm (0.062 in.) from case for 10s 50/60HZ, RMS, t=1s, leads-to-tab Mounting force Test Conditions Maximum Ratings - 55 ... +150 150 - 55 ... +150 300 2500 20..120 / 4.5..27 °C °C °C °C V~ N/lb. trr(typ) ISOPLUS i4-PakTM 1 Isolated Tab 5 Symbol CP dS , d A dS , d A Weight Test Conditions Coupling capacitance between shorted pins and mounting tab in the case pin - pin pin - backside metal 1.7 5.5 9 Characteristic Values Min. Typ. Max. 40 pF mm mm g Features Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rated Low QG Low Drain-to-Tab capacitance Low package inductance P - CHANNEL Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings -150 -150 ± 20 ± 30 - 22 - 90 - 36 1.5 125 V V V V A A A J W Advantages Low gate drive requirement High power density Low drain to ground capacitance Fast switching Applications DC and AC motor drives Class AB audio amplifiers Multi-phase DC to DC converters Industrial battery chargers Switching power supplies © 2008 IXYS CORPORATION, All rights reserved DS100034(08/08) FMP36-015P Symbol Test Conditions2 (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS= -10V, VDS = 0.5 VDSS, ID = -18A Resistive Switching Times VGS = -10V, VDS = 0.5 RG = 3.3Ω (External) VDSS, ID = -18A VGS = 0V, VDS = - 25 V, f = 1MHz VGS = 0V, ID = - 250 μA VDS = VGS, ID = - 250μA VGS = ±20V, VDS = 0V VDS = VDSS, VGS = 0V VGS = -10V, ID = -18A, Note 1 VDS = -10V, ID = -18A, Note 1 11 19 3100 610 100 21 31 36 15 55 20 18 TJ = 125°C Characteristic Values Min. Typ. Max. -150 - 2.5 - 4.5 ± 100 V V nA ISOPLUS i4-PakTM Outline -10 μA - 250 μA 110 mΩ S pF pF pF ns ns ns ns nC nC nC 1.0 °C/W °C/W Ref: IXYS CO 0077 R0 Drain-Source Diode Symbol IS ISM VSD trr QRM IRM Test Conditions2 VGS = 0V Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. - 22 -140 - 3.3 228 2.0 -17.6 A A V ns μC A Repetitive, pulse width limited by TJM IF = -18A, VGS = 0 V, Note 1 IF = -18A, di/dt = 100 A/μs VR = - 75V, VGS = 0V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 FMP36-015P N - CHANNEL Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 36 150 50 1.0 125 V V V V A A A J W Symbol Test Conditions2 (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VGS= 10V, VDS = 0.5 VDSS, ID = 31A Resistive Switching Times VGS = 10V, VDS = 0.5 VDSS, ID = 31A RG = 10Ω (External) VGS = 0V, VDS = 25 V, f = 1 MHz VGS = 0V, ID = 250 μA VDS = VGS, ID = 250μA VGS = ±20 V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 31A, (Note 1) VDS = 10V, ID = 31A, (Note 1) TJ = 150°C Characteristic Values Min. Typ. Max. 150 3.0 5.5 ± 100 25 250 33 14 24 2250 660 185 27 38 76 35 70 20 38 V V nA μA μA 40 mΩ S pF pF pF ns ns ns ns nC nC nC 1.0 °C/W 0.15 °C/W © 2008 IXYS CORPORATION, All rights reserved FMP36-015P Source-Drain Diode Symbol IS ISM VSD trr QRM Test Conditions3 VGS = 0V Repetitive, pulse width limited by TJM IF = 62A, VGS = 0V, Note 1 IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 150 2.0 Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. 36 150 1.5 A A V ns μC Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right IXYS reserves the right to change limits, test conditions, and dimensions.