FMP76-010T

Advance Technical Information TrenchTM P & N-Channel Power MOSFET Common Drain Topology FMP76-010T VDSS 3 4 5 4 3 P CH. - 100V - 54A 24mΩ 70ns N CH. 100V 62A 11mΩ 67ns T1 T2 ID25 RDS(on) trr(typ) 1 1 2 2 ISOPLUS i4-PakTM Symbol TJ TJM Tstg VISOLD TL TSOLD FC 50/60HZ, RMS, t = 1min, leads-to-tab 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force Test Conditions Maximum Ratings -55 ... +150 150 -55 ... +150 2500 300 260 20..120 / 4.5..27 °C °C °C ~V °C °C N/lb. Features Symbol CP dS , d A dS , d A Weight Test Conditions Coupling capacitance between shorted pins and mounting tab in the case pin - pin pin - backside metal 1.7 5.5 9 Characteristic Values Min. Typ. Max. 40 pF mm mm g Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rated Low QG Low Drain-to-Tab capacitance Low package inductance 1 Isolated Tab 5 P - CHANNEL Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings - 100 - 100 ± 20 ± 30 - 54 - 230 - 38 1.0 132 V V V V A A A J W Advantages Low gate drive requirement High power density Low drain to ground capacitance Fast switching Applications DC and AC motor drives Class AB audio amplifiers Multi-phase DC to DC converters Industrial battery chargers Switching power supplies © 2008 IXYS CORPORATION, All rights reserved DS100037(09/08) FMP76-010T Symbol Test Conditions2 (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS= -10V, VDS = 0.5 VDSS, ID = - 38A Resistive Switching Times VGS = -10V, VDS = 0.5 RG = 1Ω (External) VDSS, ID = - 38A VGS = 0V, VDS = - 25V, f = 1MHz VGS = 0V, ID = - 250 μA VDS = VGS, ID = - 250μA VGS = ±20 V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. - 100 - 2.0 - 4.0 ± 100 V V nA ISOPLUS i4-PakTM Outline -15 μA - 750 μA 24 mΩ 35 58 13.7 890 275 25 40 52 20 197 65 65 S nF pF pF ns ns ns ns nC nC nC 0.95 °C/W °C/W Ref: IXYS CO 0077 R0 VGS = -10V, ID = - 38A, Note 1 VDS = -10V, ID = - 38A, Note 1 Drain-Source Diode Symbol IS ISM VSD trr QRM IRM Test Conditions2 VGS = 0V Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. - 54 - 304 - 1.3 70 215 -6 A A V ns nC A Repetitive, pulse width limited by TJM IF = - 38A, VGS = 0V, Note 1 IF = - 38A, di/dt = 100A/μs VR = - 50V, VGS = 0V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 FMP76-010T N - CHANNEL Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 100 100 ± 20 62 300 65 500 89 V V V A A A mJ W Symbol Test Conditions2 (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VGS= 10V, VDS = 0.5 VDSS, ID = 25A Resistive Switching Times VGS = 10V, VDS = 0.5 VDSS, ID = 25A RG = 5Ω (External) VGS = 0V, VDS = 25 V, f = 1 MHz VGS = 0V, ID = 250 μA VDS = VGS, ID = 250μA VGS = ±20 V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 25A, (Note 1) VDS = 10V, ID = 60A, (Note 1) TJ = 150°C Characteristic Values Min. Typ. Max. 100 2.5 4.5 ± 200 V V nA 5 μA 250 μA 11 mΩ 55 93 5080 635 95 30 47 44 28 104 30 29 S pF pF pF ns ns ns ns nC nC nC 1.4 °C/W 0.15 °C/W © 2008 IXYS CORPORATION, All rights reserved FMP76-010T Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions3 VGS = 0V Repetitive, pulse width limited by TJM IF = 25A, VGS = 0V, Note 1 IF = 25A, -di/dt = 100A/μs VR = 50V, VGS = 0V 67 160 4.7 Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. 62 350 1.0 A A V ns nC A Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions.