GMM 3x100-01X1
Three phase full Bridge
with Trench MOSFETs in DCB isolated high current package
L1+ G1 S1 G3 S3 L1 G2 S2 G4 S4 L1L2+ G5 S5 L2 G6 S6 L2L3L3 L3+
VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW
MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions Conditions TVJ = 25°C to 150°C Maximum Ratings 100 ± 20 90 68 90 68 V V A A A A
Applications AC drives • in automobiles - electric power steering - starter generator • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment Features
Characteristic Values min. typ. 7.5 14 max. 8.5 4.5 1 0.2 90 30 30 130 95 290 55 0.4 0.4 0.007 1.3 1.0 1.6
(TVJ = 25°C, unless otherwise specified) RDSon 1) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH
1)
VDS = 20 V; ID = 1 mA VDS = VDSS; VGS = 0 V VGS = ± 20 V; VDS = 0 V
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2.5 0.1
on chip level at VGS = 10 V
TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C
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VGS = 10 V; VDS = 65 V; ID = 90 A
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inductive load VGS = 10 V; VDS = 48 V ID = 70 A; RG = 33 Ω; TJ = 125°C
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with heat transfer paste (IXYS test setup)
VDS = ID·(RDS(on) + 2RPin to Chip)
IXYS reserves the right to change limits, test conditions and dimensions.
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mW mW V µA mA µA nC nC nC ns ns ns ns mJ mJ mJ K/W K/W
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• MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer • Space and weight savings
20110307
© 2011 IXYS All rights reserved
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GMM 3x100-01X1
Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VSD trr QRM IRM (diode) IF = 70 A; VGS = 0 V IF = 70 A; -diF/dt = 800 A/µs; VR = 48 V 0.9 55 0.95 33 1.2 V ns µC A
Component Symbol IRMS Conditions per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections 2 pins for output L1, L2, L3 Maximum Ratings 75 A
TJ Tstg VISOL FC Symbol Rpin to chip
1)
-55...+175 -55...+125 IISOL < 1 mA, 50/60 Hz, f = 1 minute mounting force with clip Conditions 1000 50 - 250
°C °C V~ N
min.
typ. tbd 160
max.
Weight
1)
VDS = ID·(RDS(on) + 2RPin to Chip)
IXYS reserves the right to change limits, test conditions and dimensions.
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25 g
20110307
CP
coupling capacity between shorted pins and back side metallization
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mW
Characteristic Values
pF
© 2011 IXYS All rights reserved
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GMM 3x100-01X1
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Part Name & Packing Unit Marking GMM 3x100-01X1 - SMD
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Leads Ordering Standard Part Marking GMM 3x100-01X1 Delivering Mode Blister Base Qty. 28 Ordering Code 509 035
20110307
SMD
IXYS reserves the right to change limits, test conditions and dimensions.
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© 2011 IXYS All rights reserved
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