GMM3X120-0075X2

GMM 3x120-0075X2 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ G1 S1 G3 S3 L1 G2 S2 G4 S4 L1L2+ G5 S5 L2 G6 S6 L2L3L3 L3+ VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions Conditions TVJ = 25°C to 150°C Maximum Ratings 75 ± 20 110 85 110 80 V V A A A A Applications AC drives • in automobiles - electric power steering - starter generator • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment Features Characteristic Values min. typ. 4.0 7.2 max. 4.9 8.4 1 0.2 (TVJ = 25°C, unless otherwise specified) t 2.0 4.0 50 115 30 30 130 100 500 100 0.20 0.50 0.01 1.3 1.0 1.6 RDSon 1) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) on chip level at VGS = 10 V VDS = 20 V; ID = 1 mA VDS = VDSS; VGS = 0 V VGS = ± 20 V; VDS = 0 V TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C a t VGS = 10 V; VDS = 36 V; ID = 25 A e inductive load VGS = 10 V; VDS = 30 V ID = 80 A; RG = 39 Ω; TJ = 125°C n VDS = ID·(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. t with heat transfer paste (IXYS test setup) iv mW mW V µA µA µA nC nC nC ns ns ns ns mJ mJ mJ K/W K/W e • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer • Space and weight savings 20110307 © 2011 IXYS All rights reserved 1-4 GMM 3x120-0075X2 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VSD trr QRM IRM (diode) IF = 80 A; VGS = 0 V IF = 80 A; -diF/dt = 800 A/µs; VR = 30 V 0.9 55 0.9 30 1.2 V ns µC A Component Symbol IRMS Conditions per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections 2 pins for output L1, L2, L3 Maximum Ratings 75 A TJ Tstg VISOL FC Symbol Rpin to chip 1) IISOL < 1 mA, 50/60 Hz, f = 1 minute mounting force with clip Conditions min. -55...+175 -55...+125 1000 50 - 250 typ. tbd coupling capacity between shorted pins and back side metallization 160 max. °C °C V~ N Characteristic Values mW CP Weight 1) 25 VDS = ID·(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t 20110307 iv pF g e 2-4 © 2011 IXYS All rights reserved GMM 3x120-0075X2 t e n Part Name & Packing Unit Marking t a t Leads SMD Ordering Standard Part Marking Delivering Mode Blister Base Qty. 28 Ordering Code 507 508 20110307 GMM 3x120-0075X2 - SMD GMM 3x120-0075X2 IXYS reserves the right to change limits, test conditions and dimensions. iv © 2011 IXYS All rights reserved e 3-4 GMM 3x120-0075X2 IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t 20110307 iv © 2011 IXYS All rights reserved e 4-4