GMM3X160-0055X2

GMM 3x160-0055X2 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ G1 S1 G3 S3 L1 G2 S2 G4 S4 L1L2+ G5 S5 L2 G6 S6 L2L3L3 L3+ VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mW MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions Conditions TVJ = 25°C to 150°C Maximum Ratings 55 ± 20 150 115 140 90 V V A A A A Applications AC drives • in automobiles - electric power steering - starter generator • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment Features Characteristic Values t min. typ. 2.2 3.7 max. 3.1 5.3 1 0.2 110 35 25 100 110 500 100 0.12 0.53 0.01 1.3 1.0 1.6 2.0 4.0 50 (TVJ = 25°C, unless otherwise specified) RDSon 1) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) VDS = 20 V; ID = 1 mA VDS = VDSS; VGS = 0 V VGS = ± 20 V; VDS = 0 V a on chip level at VGS = 10 V TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C t VGS = 10 V; VDS = 28 V; ID = 100 A n e inductive load VGS = 10 V; VDS = 24 V ID = 100 A; RG = 39 Ω; TJ = 125°C VDS = ID·(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. t with heat transfer paste (IXYS test setup) iv mW mW V µA µA µA nC nC nC ns ns ns ns mJ mJ mJ K/W K/W e • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer • Space and weight savings 20110307 © 2011 IXYS All rights reserved 1-4 GMM 3x160-0055X2 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VSD trr QRM IRM (diode) IF = 80 A; VGS = 0 V IF = 100 A; -diF/dt = 800 A/µs VR = 24 V; TJ = 125°C 0.9 38 0.45 22 1.2 V ns µC A Component Symbol IRMS Conditions per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections 2 pins for output L1, L2, L3 Maximum Ratings 75 A TJ Tstg VISOL FC Symbol Rpin to chip 1) IISOL < 1 mA, 50/60 Hz, f = 1 minute mounting force with clip Conditions min. -55...+175 -55...+125 1000 50 - 250 typ. tbd coupling capacity between shorted pins and back side metallization 160 max. °C °C N Characteristic Values CP Weight 1) VDS = ID·(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t 20110307 iv mW pF g 25 e 2-4 V~ © 2011 IXYS All rights reserved GMM 3x160-0055X2 t e n Part Name & Packing Unit Marking t a t Leads SMD Ordering Standard Part Marking Delivering Mode Blister Base Qty. 28 Ordering Code 507 504 20110307 GMM 3x160-0055X2 - SMD GMM 3x160-0055X2 IXYS reserves the right to change limits, test conditions and dimensions. iv © 2011 IXYS All rights reserved e 3-4 GMM 3x160-0055X2 IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t 20110307 iv © 2011 IXYS All rights reserved e 4-4