GMM3X180-004X2

GMM 3x180-004X2 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ G1 S1 G3 S3 L1 G2 S2 G4 S4 L1L2+ G5 S5 L2 G6 S6 L2L3L3 L3+ VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW MOSFETs Symbol VDSS VGS ID25 ID90 ID110 IF25 IF90 IF110 TC = 25°C TC = 90°C TC = 110°C TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Conditions TVJ = 25°C to 150°C Maximum Ratings 40 ± 20 180 136 120 182 112 88 V V A A A A A A Applications AC drives • in automobiles - electric power steering - starter generator • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment Features • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer • Space and weight savings Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. 1.9 2.8 2.5 TVJ = 25°C TVJ = 125°C 50 0.2 110 33 30 150 240 350 170 0.12 0.51 0.003 1.3 1.0 1.6 max. 2.5 5.3 4.5 5 mW mW V µA µA µA nC nC nC ns ns ns ns mJ mJ mJ K/W K/W RDSon VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) 1) on chip level at VGS = 10 V VDS = 20 V; ID = 1 mA VDS = VDSS; VGS = 0 V VGS = ± 20 V; VDS = 0 V TVJ = 25°C TVJ = 125°C VGS = 10 V; VDS = 20 V; ID = 100 A inductive load VGS = +10/0 V; VDS = 15 V ID = 135 A; RG = 39 Ω; TJ = 125°C with heat transfer paste (IXYS test setup) VDS = ID·(RDS(on) + RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. 20110307b © 2011 IXYS All rights reserved 1-7 GMM 3x180-004X2 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VSD trr QRM IRM (diode) IF = 100 A; VGS = 0 V IF = 100 A; -diF/dt = 600 A/µs VR = 15 V; TJ = 125°C 0.9 38 0.31 14 1.2 V ns µC A Component Symbol IRMS Conditions per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections 2 pins for output L1, L2, L3 Maximum Ratings 75 A TJ Tstg VISOL FC Symbol IISOL < 1 mA, 50/60 Hz, f = 1 minute mounting force with clip Conditions min. Rpin to chip 1) L+ to L1/L2/L3 or L- to L1/L2/L3 -55...+175 -55...+125 1000 50 - 250 typ. 0.9 160 25 max. °C °C V~ N Characteristic Values mW CP Weight 1) coupling capacity between shorted pins and back side metallization pF g VDS = ID·(RDS(on) + RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. 20110307b © 2011 IXYS All rights reserved 2-7 GMM 3x180-004X2 Leads SMD Ordering Standard Part Name & Packing Unit Marking GMM 3x180-004X2 - SMD Part Marking GMM 3x180-004X2 Delivering Mode Blister Base Qty. 28 Ordering Code 509042 20110307b IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 3-7 GMM 3x180-004X2 IXYS reserves the right to change limits, test conditions and dimensions. 20110307b © 2011 IXYS All rights reserved 4-7 GMM 3x180-004X2 1.2 400 IDSS = 0.25 mA 1.1 350 300 VDS = 16 V VDSS 1.0 normalized ID [A] 250 200 150 100 50 TJ = 125°C TJ = 25°C 0 1 2 3 4 5 6 7 8 9 0.9 0.8 0.7 -25 0 25 50 75 100 125 150 0 TJ [°C] VGS [V] Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TVJ 400 400 TVJ = 25°C 7V 300 Fig. 2 Typical transfer characteristic 300 VGS = 20 V 15 V 10 V VGS = 20 V 15 V 10 V TVJ = 125°C 7V 6.5 V ID [A] 6.5 V 200 6V 100 5.5 V 5V 0 ID [A] 200 6V 100 5.5 V 5V 0 1 2 3 4 0 0 1 2 3 4 VDS [V] VDS [V] Fig. 3 Typical output characteristic Fig. 4 Typical output characteristic 2.5 2.0 VGS = 10 V ID = 135 A RDS(on) 5 4.0 3.5 3.0 5V 5.5 V 6 V 6.5 V 7V TVJ = 125°C 4 RDS(on) norm. 1.5 3 RDS(on) mΩ 1.0 RDS(on) normalized 0.5 2 RDS(on) norm. 2.0 1.5 VGS = 10 V 15 V 20 V 2.5 1 1.0 0.5 0.0 -25 0 25 50 75 100 125 0 150 0 100 200 300 400 TVJ [°C] ID [A] Fig. 5 Typ. drain source on-state resistance RDS(on) versus junction temperature TJ IXYS reserves the right to change limits, test conditions and dimensions. Fig. 6 Typ. drain source on-state resistance RDS(on) versus ID 20110307b © 2011 IXYS All rights reserved 5-7 GMM 3x180-004X2 12 10 8 200 ID = 135 A TVJ = 25°C 180 160 140 VGS [V] 6 4 2 0 VDS = 15 V VDS = 28 V 120 ID 100 [A]80 60 40 20 0 20 40 60 80 100 120 0 0 25 50 75 100 125 150 175 200 QG [nC] TC [°C] Fig. 7 Gate charge characteristics Fig. 8 Drain current ID vs. temperature TC 0.4 VDS = 15 V VGS = +10/0 V 0.3 RG = 39 Ω TVJ = 125°C tr 400 0.6 0.5 600 500 400 td(off) 300 Eon, Erec(off) 0.2 t td(on) 200 Eoff [mJ] 0.4 VDS = 15 V VGS = +10/0 V 0.3 RG = 39 Ω TVJ = 125°C 0.2 0.1 t 300 200 100 [mJ] 0.1 [ns] 100 [ns] tf Eon 10x Erec(off) 0.0 0 40 80 120 160 200 0 0.0 Eoff 0 40 80 120 160 200 0 ID [A] Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching ID [A] Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching 1.0 VDS = 15 V VGS = +10/0 V ID = 135 A TJ = 125°C tr 500 1.0 VDS = 15 V VGS = +10/0 V ID = 135 A TVJ = 125°C td(off) 1000 0.8 400 td(on) 300 t [ns] 0.8 800 Erec(on) 0.6 [mJ] 0.4 0.2 Eon 0.0 0 20 40 Erec(on) x10 60 80 100 Eon, 200 Eoff [mJ] 0.6 Eoff 0.4 tf 600 t [ns] 400 100 0.2 200 0 120 0.0 0 20 40 60 80 100 0 120 RG [Ω] RG [Ω] Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. Fig. 12 Typ. turn-off energy & switching times vs. gate resistor, inductive switching 20110307b © 2011 IXYS All rights reserved 6-7 GMM 3x180-004X2 20 IF = 50 A 100 A 150 A 48 VR = 15 V TVJ = 125°C 16 44 trr [ns] IRM 12 40 150 A 100 A 50 A [A] 8 36 4 32 200 300 400 500 600 700 800 0 200 300 400 500 600 700 800 -diF /dt [A/µs] -diF /dt [A/µs] Fig. 13 Typ. reverse recovery time trr of the body diodes versus di/dt 0.6 0.5 0.4 400 350 Fig. 14 Typ. reverse recovery current IRM of the body diodes versus di/dt Qrr 0.3 IF = 50 A 100 A 150 A 300 IS [A] 250 200 150 100 TJ = -25°C 25°C 125°C 150°C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 [µC] 0.2 0.1 0.0 200 50 400 600 800 0 0.0 -diF /dt [A/µs] VSD [V] Fig. 15 Typ. reverse recovery charge Qrr of the body diodes versus di/dt Fig. 16 Typ. source current IS versus source drain voltage VSD (body diode) 0.7 0.6 0.5 Zth 0.4 [K/W] 0.3 0.2 0.1 Fig. 17 Definition of switching times 0.0 0.001 0.01 0.1 1 10 t [s] IXYS reserves the right to change limits, test conditions and dimensions. 20110307b © 2011 IXYS All rights reserved 7-7