GMM3X60-015X2

GMM3x60-015X2 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ G1 S1 G3 S3 L1 G2 S2 G4 S4 L1L2+ G5 S5 L2 G6 S6 L2L3L3 L3+ VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW MOSFETs Symbol VDSS VGS ID25 ID90 ID110 IF25 IF90 IF110 Symbol TC = 25°C TC = 90°C TC = 110°C TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Conditions Conditions TVJ = 25°C to 150°C Maximum Ratings 150 ± 20 57 45 43 tbd tbd tbd V V A A A Applications AC drives • in automobiles - electric power steering - starter generator • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment Features • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer • Space and weight savings Characteristic Values min. typ. 17 36 max. 22 4.5 1 0.1 0.2 tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd 1.3 1.0 1.6 (TVJ = 25°C, unless otherwise specified) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) VDS = 20 V; ID = 1 mA VDS = VDSS; VGS = 0 V VGS = ± 20 V; VDS = 0 V t 2.5 RDSon 1) on chip level at VGS = 10 V TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C a t VGS = 10 V; VDS = 65 V; ID = 50 A inductive load VGS = 10 V; VDS = 96 V ID = 50 A; RG = 33 Ω; TJ = 125°C n e with heat transfer paste (IXYS test setup) IXYS reserves the right to change limits, test conditions and dimensions. t VDS = ID·(RDS(on) + 2RPin to Chip) iv mW mW V µA mA µA nC nC nC ns ns ns ns mJ mJ mJ K/W K/W e A A A 20110307 © 2011 IXYS All rights reserved 1-3 GMM3x60-015X2 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VSD trr QRM IRM (diode) IF = 50 A; VGS = 0 V IF = 50 A; -diF/dt = 800 A/µs; VR = 96 V 0.9 tbd tbd tbd 1.2 V ns µC A Component Symbol IRMS Conditions per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections 2 pins for output L1, L2, L3 Maximum Ratings 75 A TJ Tstg VISOL FC Symbol Rpin to chip 1) -55...+175 -55...+125 IISOL < 1 mA, 50/60 Hz, f = 1 minute mounting force with clip Conditions 1000 50 - 250 °C °C V~ N min. typ. tbd 160 max. Weight 1) VDS = ID·(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t iv 25 g 20110307 CP coupling capacity between shorted pins and back side metallization e mW Characteristic Values pF © 2011 IXYS All rights reserved 2-3 GMM3x60-015X2 e n Part Name & Packing Unit Marking GMM 3x60-015X2 - SMD t a t t Leads Ordering Standard Part Marking GMM 3x60-015X2 Delivering Mode Blister Base Qty. 28 Ordering Code 510635 20110307 SMD IXYS reserves the right to change limits, test conditions and dimensions. iv © 2011 IXYS All rights reserved e 3-3