GWM100-0085X1

GWM100-0085X1 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 85 V = 03 A 1 ID25 RDSon typ. = 5.5 mW Straight leads Surface Mount Device G2 S2 MOSFETs Symbol VDSS VGS ID25 ID90 ID110 IF25 IF90 IF110 Symbol TC = 25°C TC = 90°C TC = 110°C TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Conditions Conditions TJ = 25°C to 150°C Maximum Ratings 85 ± 20 103 77 68 tbd tbd tbd V V A A A A A A Applications AC drives • in automobiles - electric power steering - starter generator • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment Features • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer • Space and weight savings Package options • 2 lead forms available - straight leads (SL) - SMD lead version (SMD) (TJ = 25°C, unless otherwise specified) t min. typ. 5.5 12.7 2.0 100 114 30 35 tbd tbd tbd tbd tbd tbd tbd 1.3 RDSon 1) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) on chip level at VGS = 10 V; ID = 75 A VDS = 20 V; ID = 250 µA VDS = VDSS; VGS = 0 V VGS = ± 20 V; VDS = 0 V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C a t VGS = 10 V; VDS = 42 V; ID = 75 A e inductive load VGS = 10 V; VDS = 42 V ID = 75 A; RG = 39 Ω; TJ = 125°C n t with heat transfer paste (IXYS test setup) VDS = ID·(RDS(on) + RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. iv Characteristic Values max. 6.2 4.0 5 0.2 mW mW V µA µA µA nC nC nC ns ns ns ns mJ mJ mJ 1.0 1.6 K/W K/W e 20110307 © 2011 IXYS All rights reserved 1-3 GWM100-0085X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr QRM IRM (diode) IF = 100 A; VGS = 0 V IF = 100 A; -diF/dt = 800 A/µs; VR = 24 V TVJ = 125°C typ. 0.9 tbd tbd tbd max. 1.2 V ns µC A Component Symbol IRMS TJ Tstg VISOL FC Symbol IISOL < 1 mA, 50/60 Hz, f = 1 minute mounting force with clip Conditions Conditions per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections Maximum Ratings 300 -55...+175 -55...+125 1000 50 - 250 A °C °C V~ N Characteristic Values min. typ. 1.0 160 max. CP Weight 1) coupling capacity between shorted pins and mounting tab in the case VDS = ID·(RDS(on) + RPin to Chip) t IXYS reserves the right to change limits, test conditions and dimensions. e n t a t iv pF g 25 20110307 Rpin to chip 1) L+ to L1/L2/L3 or L- to L1/L2/L3 e mW © 2011 IXYS All rights reserved 2-3 GWM100-0085X1 Straight Leads GWM 100-085X1-SL 37,5 +0,20 (11x) 3 ±0,05 1,5 1 ±0,05 5 ±0,05 1 ±0,05 0,5 ±0,02 25 +0,20 53 ±0,15 4,5 12 ±0,05 4 ±0,05 (3x) 6 ±0,05 iv 37,5 +0,20 1,5 Surface Mount Device GWM 100-085X1-SMD (11x) 3 ±0,05 1 ±0,05 5 ±0,05 0,5 ±0,02 R1 ±0,2 a t 25 +0,20 39 ±0,15 t 2,1 n e 1 ±0,05 5 ±0,10 4,5 12 ±0,05 4 ±0,05 (3x) 6 ±0,05 5° ±2° e Part Name & Packing Unit Marking GWM 100-0085X1 - SL GWM 100-0085X1 - SMD 2,1 t Leads Ordering Standard Standard Part Marking GWM 100-0085X1 GWM 100-0085X1 Delivering Mode Blister Blister Base Qty. 28 28 Ordering Code tbd tbd 20110307 Straight SMD IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 3-3