GWM100-01X1

GWM 100-01X1 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW Straight leads Surface Mount Device G2 S2 MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions Conditions TJ = 25°C to 150°C Maximum Ratings 100 ± 20 90 68 90 68 V V A A A A Applications AC drives • in automobiles - electric power steering - starter generator • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment Features • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer • Space and weight savings Package options • 2 lead frames available - straight leads (SL) - SMD lead version (SMD) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. 7.5 14 2.5 TJ = 25°C TJ = 125°C 0.1 0.2 90 30 30 130 95 290 55 0.4 0.4 0.007 1.3 1.0 1.6 max. 8.5 4.5 1 mW mW V µA mA µA nC nC nC ns ns ns ns mJ mJ mJ K/W K/W RDSon VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) 1) on chip level at VGS = 10 V; ID = 80 A VDS = 20 V; ID = 250 µA VDS = VDSS; VGS = 0 V VGS = ± 20 V; VDS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V; VDS = 65 V; ID = 90 A inductive load VGS = 10 V; VDS = 48 V ID = 70 A; RG = 33 Ω; TJ = 125°C with heat transfer paste (IXYS test setup) VDS = ID·(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. 20110307e © 2011 IXYS All rights reserved 1-6 GWM 100-01X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr QRM IRM (diode) IF = 70 A; VGS = 0 V IF = 70 A; -diF/dt = 800 A/µs; VR = 48 V typ. 0.9 55 0.95 33 max. 1.2 V ns µC A Component Symbol IRMS TJ Tstg VISOL FC Symbol Rpin to chip 1) IISOL < 1 mA, 50/60 Hz, f = 1 minute mounting force with clip Conditions Conditions per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections Maximum Ratings 300 -55...+175 -55...+125 1000 50 - 250 A °C °C V~ N Characteristic Values min. typ. 0.6 160 25 max. mW CP Weight 1) coupling capacity between shorted pins and mounting tab in the case pF g VDS = ID·(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. 20110307e © 2011 IXYS All rights reserved 2-6 GWM 100-01X1 Straight Leads 1,5 GWM 100-01X1-SL 37,5 +0,20 (11x) 3 ±0,05 1 ±0,05 5 ±0,05 1 ±0,05 0,5 ±0,02 25 +0,20 53 ±0,15 2,1 4,5 12 ±0,05 4 ±0,05 (3x) 6 ±0,05 Surface Mount Device 37,5 +0,20 1,5 (11x) 3 ±0,05 1 ±0,05 GWM 100-01X1-SMD 5 ±0,05 0,5 ±0,02 R1 ±0,2 25 +0,20 39 ±0,15 4,5 12 ±0,05 4 ±0,05 (3x) 6 ±0,05 2,1 1 ±0,05 5 ±0,10 5° ±2° Leads Straight SMD Ordering Standard Standard Part Name & Packing Unit Marking GWM 100-01X1 - SL GWM 100-01X1 - SMD Part Marking GWM 100-01X1 GWM 100-01X1 Delivering Mode Blister Blister Base Qty. 28 28 Ordering Code 505 535 505 542 20110307e IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 3-6 GWM 100-01X1 1.2 IDSS = 0.25 mA 180 160 140 120 VDS = 30 V VDSS [V] normalized 1.1 ID - [A] 1.0 0.9 0.8 0.7 -25 100 80 60 40 20 0 TJ = 125°C TJ = 25°C 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TJ 180 160 140 120 100 80 60 40 20 0 6V 5.5 V 5V 7V 6.5 V TJ [°C] VGS [V] Fig. 2 Typical transfer characteristic VGS= 20 V 15 V 10 V TJ = 25°C 180 160 140 120 VGS = 20 V 15 V 10 V TJ = 125°C ID [A] ID [A] 100 80 60 40 20 7V 6.5 V 6V 5.5 V 5V 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 VDS [V] Fig. 3 Typical output characteristic VDS [V] Fig. 4 Typical output characteristic 2.5 2.0 VGS = 10 V ID = 90 A 20 16 5.0 4.5 RDS(ON) - normalized 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 5.5 V 6 V 6.5 V TJ = 125°C RDS(on) normalized RDS(on) [mΩ] 1.5 1.0 0.5 0.0 -25 RDS(on) RDS(on) normalized 12 8 4 0 7V VGS = 10 V 15 V 20 V 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 180 200 TJ [°C] Fig. 5 Drain source on-state resistance RDS(on) versus junction temperature TJ IXYS reserves the right to change limits, test conditions and dimensions. ID [A] Fig. 6 Drain source on-state resistance RDS(on) versus ID 20110307e © 2011 IXYS All rights reserved 4-6 GWM 100-01X1 14 12 10 ID = 9 0 A TJ = 25°C 120 VDS = 20 V TJ = 175°C 100 80 VGS [V] ID - [A] 8 6 4 2 0 VDS = 65 V 60 40 20 0 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 200 QG [nC] Fig.7 Gate charge characteristic TC [°C] Fig. 8 Drain current ID vs. case temperature TC 0.6 0.5 VDS = 48 V VGS = +10/0 V RG = 33 Ω TJ = 125°C 300 250 200 0.6 0.5 0.4 VDS = 48 V VGS = +10/0 V RG = 33 Ω TJ = 125°C 600 500 400 td(off) Eon, Erec(off) [mJ] 0.4 0.3 0.2 Eoff [mJ] t [ns] td(on) tr Eon 150 100 50 0.3 0.2 0.1 0.0 Eoff 300 200 0.1 0.0 Erec(off) x10 tf 100 0 0 10 20 30 40 50 60 70 80 90 100 0 0 10 20 30 40 50 60 70 80 90 100 ID [A] Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching ID [A] Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching 1.6 1.4 VDS = 48 V VGS = +10/0 V ID = 90 A TJ = 125°C Eon td(on) tr 400 350 300 1.2 1.0 0.8 VDS = 48 V VGS = +10/0 V ID = 90 A TJ = 125°C td(off) 1200 1000 800 600 400 tf Eon, Erec(off) [mJ] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Eoff [mJ] 250 t [ns] 200 150 100 0.6 0.4 0.2 0.0 Eoff Erec(off) x10 50 0 200 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 RG [Ω] Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching Fig. 12 RG [Ω] Typ. turn-off energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. 20110307e © 2011 IXYS All rights reserved 5-6 t [ns] t [ns] GWM 100-01X1 70 60 50 IF = 90 A 60 A 60 50 30 A IF = 90 A 60 A 40 IRM [A] trr [ns] 40 30 20 10 0 200 400 600 30 A 30 20 V R = 48 V TJ = 125°C 10 0 200 VR = 48 V TJ = 125°C 800 1000 1200 1400 1600 400 600 800 1000 1200 1400 1600 -diF /dt [A/µs] Fig. 13 Reverse recovery time trr of the body diode vs. di/dt Fig. 14 -diF/dt [A/µs] Reverse recovery current IRM of the body diode vs. di/dt 1.4 1.2 1.0 IF = 90 A 60 A 180 160 140 120 VGS = 0 V Qrr [µC] IF [A] 0.8 0.6 0.4 0.2 0.0 200 400 600 30 A 100 80 60 TJ = -25°C 25°C 125°C 150°C VR = 48 V TJ = 125°C 40 20 0 800 1000 1200 1400 1600 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -diF /dt [A/µs] Fig. 15 Reverse recovery charge Qrr of the body diode vs. di/dt VSD [V] Fig. 16 Source drain diode current IF vs. source drain voltage VSD (body diode) 1.4 Thermal Response [K/W] VGS 0.1 VGS 0.9 ID 0.1 ID td(on) tr 0.9 VGS t 1.2 1.0 0.8 0.6 0.4 0.2 0.0 GWM 160-0055X1 VDS ID 0.9 ID 0.1 ID td(off) tf t 1 10 100 1000 10000 t [ms] Fig. 17 Definition of switching times Fig. 18 Typ. thermal impedance junction to heatsink ZthJH with heat transfer paste 20110307e IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 6-6