GWM160-0055P3

GWM 160-0055P3 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 160 120 A A 135 90 A A e- TC = 25°C TC = 90°C V V ou VGS ID25 ID90 55 ± 20 Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) VGS(th) VDS = 20 V; ID = 1 mA IDSS VDS = VDSS; VGS = 0 V TJ = 25°C TJ = 125°C IGSS VGS = ± 20 V; VDS = 0 V Qg Qgs Qgd VGS = 10 V; VDS = 12 V; ID = 160 A Eon Eoff Erecoff RthJC RthJH max. 2.0 3.4 3.0 mW mW 4 V 1 µA mA 0.2 µA 0.1 90 18 25 nC nC nC 95 105 500 110 ns ns ns ns 0.12 0.52 0.012 mJ mJ mJ 0.9 with heat transfer paste 1.2 Features • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer • Space and weight savings Package options • 3 lead forms available - straight leads (SL) - SMD lead version (SMD) - bent leads (BL) K/W K/W VDS = ID·(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 20070322 1) inductive load VGS = 10 V; VDS = 24 V ID = 100 A; RG = 39 Ω; TJ = 125°C typ. 2 TJ = 25°C TJ = 125°C Ph on chip level at VGS = 10 V; ID = 100 A as min. RDSon 1) AC drives • in automobiles - electric power steering - starter generator • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment t Symbol td(on) tr td(off) tf Straight leads Applications MOSFETs Symbol Surface Mount Device Bent leads -6 GWM 160-0055P3 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD (diode) IF = 100 A; VGS = 0 V trr QRM IRM IF = 100 A; -diF/dt = 800 A/µs; VR = 24 V typ. max. 0.9 1.2 60 0,65 20 V ns µC A Component Symbol Conditions Maximum Ratings IRMS per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute FC mounting force with clip Symbol Conditions °C °C 1000 V~ 50 - 250 N ou Rpin to chip 1) typ. max. 0.6 mW 160 pF e- coupling capacity between shorted pins and mounting tab in the case Weight 25 VDS = ID·(RDS(on) + 2RPin to Chip) g IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 20070322 Ph as 1) -40...+175 -55...+125 Characteristic Values min. CP A t TJ Tstg 300 -6 GWM 160-0055P3 Bent Leads GWM 160-0055P3-SL GWM 1055P3-BL ou t Straight Leads Ordering Code & Packing Unit Marking e- Leads Straight GWM 160-0055P3 - SL Surface Mount Device SMD as GWM 1055P3-SMD Code Key GWM 160-0055P3 502 829 GWM 160-0055P3 - SMD GWM 160-0055P3 502 836 GWM 160-0055P3 - BL GWM 160-0055P3 contact factory IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 20070322 Ph Bent Part Marking -6 GWM 160-0055P3 350 1.2 VDS = 24 V IDSS = 0.25 mA 300 250 1.0 ID - [A] VDSS [V] normalized 1.1 0.9 200 150 100 0.8 TJ = 125°C 50 0.7 -25 TJ = 25°C 0 0 25 50 75 100 125 0 150 2 4 TJ [°C] Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TJ t 300 Fig. 2 Typical transfer characteristic 350 VGS= 20 V, 15 V 10 V TJ = 25°C 7V 10 V TJ = 125°C 7V 250 6.5 V 150 ID [A] 200 6V 6.5 V 200 6V 150 e- ID [A] VGS = 20 V 15 V 300 250 100 as 0 1 2 3 4 5 5V 50 5V 0 5.5 V 100 5.5 V 50 0 0 6 1 2 3 VDS [V] VGS = 10 V ID = 160 A 3.0 6.0 3.6 RDS(on) RDS(on) normalized 1.0 0.5 2.4 RDS(on) [m:] 1.5 5.5 V 5V 6.5 V 6V 4.8 2.0 1.2 5 6 Fig. 4 Typical output characteristic RDS(ON) - normalized Ph 2.5 4 VDS [V] Fig. 3 Typical output characteristic RDS(on) normalized 8 ou 350 6 VGS [V] TJ = 125°C 7V 2.5 2.0 1.5 VGS = 10 V 1.0 15 V 20 V 0.5 0 25 50 75 100 125 150 TJ [°C] Fig. 5 Drain source on-state resistance RDS(on) versus junction temperature TJ IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 0 50 100 150 200 250 300 350 ID [A] Fig. 6 Drain source on-state resistance RDS(on) versus ID 20070322 0.0 -25 -6 GWM 160-0055P3 14 200 ID = 160 A TJ = 25°C 12 180 160 140 VDS = 12 V ID - [A] VGS [V] 10 8 6 VDS = 40 V 4 120 100 80 60 40 2 20 0 0 60 80 100 120 140 0 25 50 QG [nC] td(on) 0.08 0.04 0.00 0 ID = 160 A as tr td(on) TJ = 125°C 0.45 tf 0 20 40 60 80 100 120 140 160 180 2.0 350 280 t [ns] 210 0.30 200 Eoff Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching 140 Eoff [mJ] 0.60 Eon, Erec(off) [mJ] Ph VDS = 24 V VGS = +10/0 V 1600 1.8 VDS = 24 V VGS = +10/0 V 1440 1.6 ID = 160 A 1280 1.4 TJ = 125°C td(off) 1.2 70 Eon 800 Eoff 0.8 640 0 20 480 0.4 tf 0.2 Erec(off) 0.00 0 40 60 80 100 120 RG [:] Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 1120 960 1.0 0.6 0.15 400 ID [A] Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching 0.75 td(off) 0.4 80 100 120 140 160 180 ID [A] 600 0.0 0 60 TJ = 125°C 0.6 0.2 40 Erec(off) 800 RG = 39 : e- 80 1000 VDS = 24 V VGS = +10/0 V ou 120 Eoff [mJ] TJ = 125°C 0.12 40 175 t 0.8 160 tr t [ns] Eon, Erec(off) [mJ] RG = 39 : 20 150 1.0 200 VDS = 24 V VGS = +10/0 V 0 125 Fig. 8 Drain current ID vs. case temperature TC 0.20 Eon 100 TC [°C] Fig.7 Gate charge characteristic 0.16 75 t [ns] 40 t [ns] 20 0.0 320 160 0 0 20 40 60 80 100 120 RG [:] Fig. 12 Typ. turn-off energy & switching times vs. gate resistor, inductive switching 20070322 0 -6 GWM 160-0055P3 70 30 160 A 25 160 A IRM [A] trr [ns] 60 100 A 20 100 A 50 40 400 500 15 VR = 24 V TJ = 125°C IF = 50 A 600 700 800 VR = 24 V TJ = 125°C IF = 50 A 10 400 900 1000 1100 500 600 -diF/dt [A/µs] 700 800 900 1000 1100 -diF/dt [A/µs] Fig. 13 Reverse recovery time trr of the body diode vs. di/dt Fig. 14 Reverse recovery current IRM of the body diode vs. di/dt 1.0 t 350 VGS = 0 V ou 300 250 0.6 IF [A] Qrr [µC] 0.8 160 A 150 e- 100 A 200 100 0.4 VR = 24 V TJ = 125°C 0.2 400 500 600 700 50 as IF = 50 A 800 TJ = -25°C 25°C 125°C 150°C 0 900 1000 1100 0.0 0.2 0.4 -diF/dt [A/µs] 1.0 1.2 1.4 Ph Fig. 16 Source drain diode current IF vs. source drain voltage VSD (body diode) 1.4 0,1 VGS t VDS ID 0,9 I D 0,1 I D Thermal Response - K/W 1.2 0,9 VGS 0,9 I D 0.8 VSD [V] Fig. 15 Reverse recovery charge Qrr of the body diode vs. di/dt VGS 0.6 1.0 0.8 0.6 0.4 0.2 0,1 I D t t d(on) tr t d(off) tf GWM 160-0055P3 0.0 1 10 100 1000 10000 Time - Seconds Definition of switching times IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved Fig. 18 Typ. thermal impedance junction to heatsink ZthJH with heat transfer paste 20070322 Fig. 17 -6