GWM160-0055X1

GWM 160-0055X1 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW Straight leads Surface Mount Device G2 S2 MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions Conditions TJ = 25°C to 150°C Maximum Ratings 55 ± 20 150 115 120 75 V V A A A A Applications AC drives • in automobiles - electric power steering - starter generator • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment Features • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer • Space and weight savings Package options • 2 lead forms available - straight leads (SL) - SMD lead version (SMD) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. 2.7 4.5 2.5 TJ = 25°C TJ = 125°C 0.1 0.2 105 tbd tbd 140 125 550 120 0.17 0.60 0.004 1.3 1.0 1.6 max. 3.3 4.5 1 mW mW V µA mA µA nC nC nC ns ns ns ns mJ mJ mJ K/W K/W RDSon VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) 1) on chip level at VGS = 10 V; ID = 100 A VDS = 20 V; ID = 1 mA VDS = VDSS; VGS = 0 V VGS = ± 20 V; VDS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V; VDS = 12 V; ID = 160 A inductive load VGS = 10 V; VDS = 24 V ID = 100 A; RG = 39 Ω; TJ = 125°C with heat transfer paste (IXYS test setup) VDS = ID·(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. 20110307i © 2011 IXYS All rights reserved 1-6 GWM 160-0055X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr QRM IRM (diode) IF = 100 A; VGS = 0 V IF = 100 A; -diF/dt = 800 A/µs; VR = 24 V typ. 1.0 40 0.42 20 max. 1.3 V ns µC A Component Symbol IRMS TJ Tstg VISOL FC Symbol Rpin to chip 1) IISOL < 1 mA, 50/60 Hz, f = 1 minute mounting force with clip Conditions Conditions per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections Maximum Ratings 300 -55...+175 -55...+125 1000 50 - 250 A °C °C V~ N Characteristic Values min. typ. 0.6 160 25 max. mW CP Weight 1) coupling capacity between shorted pins and mounting tab in the case pF g VDS = ID·(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. 20110307i © 2011 IXYS All rights reserved 2-6 GWM 160-0055X1 Straight Leads 37,5 +0,20 (11x) 3 ±0,05 1,5 1 ±0,05 GWM 160-0055X1-SL 5 ±0,05 1 ±0,05 0,5 ±0,02 25 +0,20 53 ±0,15 2,1 4,5 12 ±0,05 4 ±0,05 (3x) 6 ±0,05 Surface Mount Device 37,5 +0,20 1,5 (11x) 3 ±0,05 1 ±0,05 GWM 160-0055X1-SMD 5 ±0,05 0,5 ±0,02 R1 ±0,2 25 +0,20 39 ±0,15 4,5 12 ±0,05 4 ±0,05 (3x) 6 ±0,05 2,1 1 ±0,05 5 ±0,10 5° ±2° Leads Straight SMD Ordering Standard Standard Part Name & Packing Unit Marking GWM 160-0055X1 - SL GWM 160-0055X1 - SMD Part Marking GWM 160-0055X1 GWM 160-0055X1 Delivering Mode Blister Blister Base Qty. 28 28 Ordering Code 505 230 504 862 20110307i IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 3-6 GWM 160-0055X1 1.2 IDSS = 0.25 mA 350 300 250 VDS = 24 V VDSS [V] normalized 1.1 ID - [A] 1.0 0.9 0.8 0.7 -25 200 150 100 50 0 TJ = 125°C TJ = 25°C 0 25 50 75 100 125 150 3 4 5 TJ [°C] Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TJ VGS [V] 6 7 8 Fig. 2 Typical transfer characteristic 350 300 250 VGS= 20 V 15 V 350 10 V 7V TJ = 25°C 6.5 V 300 250 VGS = 20 V 15 V 10 V TJ = 125°C 7V 6.5 V 6V ID [A] 6V 5.5 V 5V ID [A] 200 150 100 50 0 200 150 100 50 5.5 V 5V 0 1 2 VDS [V] 3 4 5 6 0 0 1 2 VDS [V] 3 4 5 6 Fig. 3 Typical output characteristic Fig. 4 Typical output characteristic 2.5 2.0 VGS = 10 V ID = 160 A 7.5 6.0 3.0 2.5 2.0 TJ = 125°C 5V 5.5 V 6V 6.5 V 7V 1.5 1.0 0.5 0.0 -25 RDS(on) RDS(on) normalized 4.5 3.0 1.5 0.0 RDS(ON) - normalized RDS(on) normalized RDS(on) [mΩ] 1.5 1.0 0.5 VGS = 10 V 15 V 20 V 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 Fig. 5 Drain source on-state resistance RDS(on) versus junction temperature TJ IXYS reserves the right to change limits, test conditions and dimensions. TJ [°C] Fig. 6 Drain source on-state resistance RDS(on) versus ID 20110307i ID [A] © 2011 IXYS All rights reserved 4-6 GWM 160-0055X1 12 10 8 ID = 160 A TJ = 25°C 200 VDS = 12 V 180 160 140 120 100 80 60 40 20 0 TJ = 175°C VGS [V] 6 4 2 0 VDS = 40 V 0 20 40 60 80 100 120 140 160 ID - [A] 0 25 50 75 100 125 150 175 QG [nC] Fig.7 Gate charge characteristic 0.30 0.25 VDS = 24 V VGS = +10/0 V RG = 39 Ω TJ = 125°C TC [°C] Fig. 8 Drain current ID vs. case temperature TC 300 250 200 1.2 1.0 0.8 VDS = 24 V VGS = +10/0 V RG = 39 Ω TJ = 125°C 1200 1000 800 600 td(off) Eon, Erec(off) [mJ] 0.20 0.15 0.10 0.05 0.00 Eoff [mJ] t [ns] td(on) 150 100 0.6 0.4 0.2 0.0 Eoff 400 200 0 Eon Erec(off) x10 50 0 tf 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 ID [A] Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching ID [A] Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching 1.4 1.2 VDS = 24 V VGS = +10/0 V ID = 160 A TJ = 125°C tr td(on) 350 300 250 Eon, Erec(off) [mJ] 1.0 0.8 0.6 0.4 0.2 0.0 0 t [ns] 150 100 Eon Erec(off) x10 Eoff 600 tf 50 450 300 150 0 20 40 60 80 100 120 0 0 20 40 60 80 100 120 RG [Ω] Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching Fig. 12 RG [Ω] Typ. turn-off energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. 20110307i © 2011 IXYS All rights reserved 5-6 t [ns] 200 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 VDS = 24 V VGS = +10/0 V ID = 160 A TJ = 125°C td(off) 1650 1500 1350 1200 1050 900 750 Eoff [mJ] t [ns] tr GWM 160-0055X1 50 40 30 20 10 0 200 V R = 24 V TJ = 125°C 160 A 100 A IF = 50 A 30 25 20 IRM [A] trr [ns] 15 10 5 0 200 160 A 100 A IF = 50 A VR = 24 V TJ = 125°C 400 600 800 1000 1200 400 600 800 1000 1200 -diF/dt [A/µs] Fig. 13 Reverse recovery time trr of the body diode vs. di/dt 0.6 0.5 0.4 350 300 250 160 A 100 A IF = 50 A V R = 24 V TJ = 125°C VGS = 0 V -diF/dt [A/µs] Fig. 14 Reverse recovery current IRM of the body diode vs. di/dt Qrr [µC] 0.3 0.2 0.1 0.0 200 IF [A] 200 150 100 50 0 TJ = -25°C 25°C 125°C 150°C 400 600 800 1000 1200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -diF /dt [A/µs] Fig. 15 Reverse recovery charge Qrr of the body diode vs. di/dt 1.4 VSD [V] Fig. 16 Source drain diode current IF vs. source drain voltage VSD (body diode) Thermal Response [K/W] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 GWM 160-0055X1 VGS 0.1 VGS 0.9 ID 0.1 ID td(on) tr 0.9 VGS t VDS ID 0.9 ID 0.1 ID td(off) tf t 1 10 100 1000 10000 t [ms] Fig. 17 Definition of switching times Fig. 18 Typ. thermal impedance junction to heatsink ZthJH with heat transfer paste 20110307i IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 6-6