IXA27IF1200HJ

IXA27IF1200HJ XPT IGBT VCES = 1200 V I C25 = 43 A VCE(sat) = 1.8 V Copack Part number IXA27IF1200HJ Backside: isolated 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: ISOPLUS247 ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20100623b IXA27IF1200HJ Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = 25°C TC = 25°C I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 25 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 1 mA; VGE = VCE I CES collector emitter leakage current VCE = VCES; VGE = 0 V gate emitter leakage current VGE = ±20 V total gate charge VCE = 600 V; VGE = 15 V; IC = t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 600 V; IC = 2.1 V 6.5 V 0.1 mA TVJ = 25°C TVJ = 25°C 25 A VGE = ±15 V; R G = 39 Ω VGE = ±15 V; R G = 39 Ω VCEmax = 900 V t SC short circuit duration VCE = 900 V; VGE = ±15 V R G = 39 Ω; non-repetitive thermal resistance junction to case R thCH thermal resistance case to heatsink A A 1.8 V 2.1 5.4 5.9 mA 0.1 nA 76 nC 70 ns 40 ns 250 ns 100 ns 2.5 mJ 3 mJ TVJ = 125 °C VCEmax = 1200 V I SC V 43 W 25 A short circuit safe operating area R thJC ±30 27 TVJ = 125 °C SCSOA short circuit current V 500 inductive load VCE = ±20 150 TVJ = 125 °C Q G(on) Unit V TC = 25°C TVJ = 25°C I GES max. 1200 TC = 80 °C TVJ = 125 °C I CM typ. TVJ = 125 °C 75 A 10 µs A 100 0.84 K/W K/W 0.25 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 42 A TC = 80 °C 25 A TVJ = 25°C 2.20 V * mA I F 80 30 A VF forward voltage IF = IR reverse current VR = VRRM TVJ = 125°C * not applicable, see Ices value above Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved TVJ = 25°C * mA 3.5 µC 30 A TVJ = 125°C VR = 600 V -di F /dt = -600 A/µs IF = 30 A; VGE = 0 V TVJ = 125°C V 1.95 350 ns 0.9 mJ 1.2 K/W 0.25 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20100623b IXA27IF1200HJ Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C Weight 6 FC 20 mounting force with clip d Spp/App VISOL mm terminal to backside 4.1 mm 3600 V 3000 V 50/60 Hz, RMS; IISOL ≤ 1 mA t = 1 minute Product Marking Part number I X A 27 IF 1200 HJ IXYS Logo N 2.7 t = 1 second isolation voltage 120 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = IGBT XPT IGBT Gen 1 / std Current Rating [A] Copack Reverse Voltage [V] ISOPLUS247 (3) ISOPLUS® XXXXXXXXX Zyyww Part No. Assembly Line abcd Assembly Code Date Code Ordering Standard Part Number IXA27IF1200HJ Equivalent Circuits for Simulation I V0 R0 Marking on Product IXA27IF1200HJ Delivery Mode Tube IGBT Diode threshold voltage 1.1 1.25 V R 0 max slope resistance * 55 28.3 mΩ © 2010 IXYS all rights reserved Code No. 509098 T VJ = 150 °C * on die level V 0 max IXYS reserves the right to change limits, conditions and dimensions. Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20100623b IXA27IF1200HJ Outlines ISOPLUS247 A2 E D2 A E1 Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 L L1 1 3x b 2x b2 Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.215 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side 2x e c b4 Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 5.45 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 A1 Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC außer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W 2 (C) (G) 1 3 (E) IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20100623b IXA27IF1200HJ IGBT 50 50 VGE = 15 V 40 40 IC 30 [A] IC TVJ = 25°C TVJ = 125°C [A] 20 13 V VGE = 15 V 17 V 19 V 11 V TVJ = 125°C 30 20 9V 10 10 0 0 0 1 VCE 2 [V] 3 0 1 2 3 VCE [V] 4 5 Fig. 2 Typ. output characteristics Fig. 1 Typ. output characteristics 50 20 IC = 25 A VCE = 600 V 40 15 IC 30 [A] VGE 10 [V] 20 5 10 TVJ = 125°C TVJ = 25°C 0 0 5 6 7 8 9 10 11 12 13 0 20 100 4 Eoff 3 Eoff 4 Eon IC = 25 A VCE = 600 V VGE = ±15 V TVJ = 125°C E [mJ] 80 Fig. 4 Typ. turn-on gate charge Eon RG = 39 VCE = 600 V VGE = ±15 V TVJ = 125°C 5 60 QG [nC] VGE [V] Fig. 3 Typ. tranfer characteristics 6 40 E 3 [mJ] 2 2 1 0 0 10 20 30 40 50 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved 1 40 60 80 100 120 140 RG [ ] Fig. 6 Typ. switching energy vs. gate resistance Data according to IEC 60747and per semiconductor unless otherwise specified 20100623b IXA27IF1200HJ Diode 60 7 50 6 40 5 TVJ = 125°C IF 60 A Qrr 30 4 [A] 30 A [µC] 20 3 TVJ = 125°C 15 A TVJ = 25°C 10 0 0.0 0.5 1.0 2 1.5 VF [V] 2.0 2.5 1 300 400 500 600 700 800 900 1000 1100 diF /dt [A/µs] 3.0 Fig. 7 Typ. Forward current versus VF Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt 70 60 700 TVJ = 125°C 60 A VR = 600 V 500 30 A trr 40 TVJ = 125°C 600 VR = 600 V 50 IRR VR = 600 V 400 15 A [A] 30 [ns] 300 20 200 10 100 0 300 400 500 600 700 800 900 1000 1100 diF /dt [A/µs] 60 A 30 A 15 A 0 300 400 500 600 700 800 900 1000 1100 diF /dt [A/µs] Fig. 9 Typ. peak reverse current IRM vs. di/dt Fig. 10 Typ. recovery time trr versus di/dt 10 2.0 TVJ = 125°C VR = 600 V 1.6 Diode 60 A 1 30 A Erec 1.2 [mJ] IGBT ZthJC [K/W] 0.8 15 A 0.1 0.4 0.0 300 400 500 600 700 800 900 1000 1100 diF /dt [A/µs] Fig.11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved 0.01 0.001 0.01 0.1 tp [s] 1 10 Fig. 12 Typ. transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20100623b Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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