IXA37IF1200HJ
XPT IGBT
VCES
=
1200 V
I C25
=
58 A
VCE(sat) =
1.8 V
Copack
Part number
IXA37IF1200HJ
Backside: isolated
2 (C)
(G) 1
3 (E)
Features / Advantages:
Applications:
Package: ISOPLUS247
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20100623c
IXA37IF1200HJ
Ratings
IGBT
Symbol
VCES
Definition
collector emitter voltage
VGES
max. DC gate voltage
VGEM
max. transient gate emitter voltage
I C25
collector current
Conditions
min.
TVJ =
25°C
TC = 25°C
I C80
V
6.5
V
0.1
mA
I C = 1.5 mA; VGE = VCE
TVJ = 25°C
I CES
collector emitter leakage current
VCE = VCES; VGE = 0 V
TVJ = 25°C
TVJ = 25°C
1.8
TVJ = 125 °C
t d(on)
turn-on delay time
tr
current rise time
t d(off)
turn-off delay time
tf
current fall time
Eon
turn-on energy per pulse
Eoff
turn-off energy per pulse
RBSOA
reverse bias safe operating area
600 V; IC =
5.4
5.9
35 A
TVJ = 125 °C
35 A
VGE = ±15 V; R G = 27 Ω
VGE = ±15 V; R G = 27 Ω
short circuit safe operating area
VCEmax = 900 V
t SC
short circuit duration
VCE = 900 V; VGE = ±15 V
R G = 27 Ω; non-repetitive
I SC
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
nA
106
nC
70
ns
40
ns
250
ns
100
ns
3.8
mJ
4.1
mJ
TVJ = 125 °C
VCEmax = 1200 V
SCSOA
short circuit current
mA
0.1
500
inductive load
VCE =
V
2.1
TVJ = 125 °C
VCE = 600 V; VGE = 15 V; IC =
A
2.1
gate emitter threshold voltage
VGE = ±20 V
V
58
A
VGE(th)
total gate charge
±30
W
IC =
gate emitter leakage current
V
37
collector emitter saturation voltage
Q G(on)
±20
195
VCE(sat)
I GES
Unit
V
TC = 25°C
total power dissipation
35 A; VGE = 15 V
max.
1200
TC = 80 °C
Ptot
I CM
typ.
TVJ = 125 °C
105
A
10
µs
A
140
0.64 K/W
K/W
0.25
Diode
VRRM
max. repetitive reverse voltage
TVJ = 25°C
1200
V
I F25
forward current
TC = 25°C
42
A
TC = 80 °C
25
A
TVJ = 25°C
2.20
V
*
mA
I F 80
30 A
VF
forward voltage
IF =
IR
reverse current
VR = VRRM
TVJ = 125°C
* not applicable, see Ices value above
Q rr
reverse recovery charge
I RM
max. reverse recovery current
t rr
reverse recovery time
E rec
reverse recovery energy
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
TVJ = 25°C
*
mA
3.5
µC
30
A
TVJ = 125°C
VR = 600 V
-di F /dt = -600 A/µs
IF =
30 A; VGE = 0 V
TVJ = 125°C
V
1.95
350
ns
0.9
mJ
1.2 K/W
0.25
Data according to IEC 60747and per semiconductor unless otherwise specified
K/W
20100623c
IXA37IF1200HJ
Package
Ratings
ISOPLUS247
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
70
Unit
A
-40
150
°C
-40
125
°C
150
°C
Weight
6
FC
20
mounting force with clip
d Spp/App
VISOL
mm
terminal to backside
4.1
mm
3600
V
3000
V
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
Product Marking
Part number
I
X
A
37
IF
1200
HJ
IXYS
Logo
N
2.7
t = 1 second
isolation voltage
120
terminal to terminal
creepage distance on surface | striking distance through air
d Spb/Apb
g
=
=
=
=
=
=
=
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Copack
Reverse Voltage [V]
ISOPLUS247 (3)
ISOPLUS®
XXXXXXXXX
Zyyww
Part No.
Assembly Line
abcd
Assembly Code
Date Code
Ordering
Standard
Part Number
IXA37IF1200HJ
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
IXA37IF1200HJ
Delivery Mode
Tube
IGBT
Diode
threshold voltage
1.1
1.25
V
R 0 max
slope resistance *
39
28.3
mΩ
© 2010 IXYS all rights reserved
Code No.
507993
T VJ = 150 °C
* on die level
V 0 max
IXYS reserves the right to change limits, conditions and dimensions.
Quantity
30
Data according to IEC 60747and per semiconductor unless otherwise specified
20100623c
IXA37IF1200HJ
Outlines ISOPLUS247
A2
E
D2
A
E1
Q
Dim.
D
D3
D1
R
A
A1
A2
b
b2
b4
c
D
D1
D2
D3
E
E1
e
L
L1
Q
R
W
2
3
L
L1
1
3x b
2x b2
Inches
min
max
0.190
0.205
0.090
0.100
0.075
0.085
0.045
0.055
0.075
0.087
0.115
0.128
0.024
0.033
0.819
0.840
0.620
0.640
0.065
0.085
0.799
0.815
0.620
0.635
0.520
0.540
0.215 BSC
0.780
0.811
0.150
0.172
0.220
0.244
0.167
0.217
0.004
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic
surface level of device bottom side
2x e
c
b4
Millimeter
min
max
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.20
2.92
3.24
0.61
0.83
20.80
21.34
15.75
16.26
1.65
2.15
20.30
20.70
15.75
16.13
13.21
13.72
5.45 BSC
19.81
20.60
3.81
4.38
5.59
6.20
4.25
5.50
0.10
A1
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD
gemäß JEDEC außer Schraubloch und Lmax.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-247 AD except screw hole and except Lmax.
W
2 (C)
(G) 1
3 (E)
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20100623c
IXA37IF1200HJ
IGBT
70
IC
60
60
50
50
70
13 V
VGE = 15 V
17 V
19 V
60
11 V
50
IC 40
TVJ = 25°C
40
[A]
70
VGE = 15 V
TVJ = 125°C
30
IC 40
[A] 30
20
20
10
10
0
[A] 30
9V
TVJ = 125°C
1
2
3
0
0
1
2
3
Fig. 1 Typ. output characteristics
5
10
IC = 35 A
VCE = 600 V
6
7
8
E
10 11 12 13
Fig. 3 Typ. tranfer characteristics
6
Eoff
6
10
[mJ]
9
VGE [V]
Eon
RG = 27
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
8
[V]
5
Fig. 2 Typ. output characteristics
20
VGE
4
VCE [V]
VCE [V]
15
TVJ = 25°C
10
0
0
TVJ = 125°C
20
IC =
35 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
Eon
5
E
[mJ]
Eoff
4
4
5
2
0
0
0
20
40
60
80 100 120 140
0
20
40
60
80
QG [nC]
IC [A]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy
vs. collector current
3
20
40
60
80
RG [W]
Fig. 6 Typ. switching energy
vs. gate resistance
1
ZthJC
0.1
[K/W]
0.01
0.001
0.01
0.1
1
10
tp [s]
Fig. 7 Typ. transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20100623c
IXA37IF1200HJ
Diode
60
7
70
TVJ = 125°C
50
6
IF 40
5
60
VR = 600 V
TVJ = 125°C
60 A
VR = 600 V
50
60 A
30 A
IRM 40
Qrr 4
[A] 30
20
30 A
[μC] 3
0
0.0
20
15 A
TVJ = 125°C
10 T = 25°C
VJ
15 A
[A] 30
2
10
1
0.5
1.0
1.5
2.0
2.5
0
3.0
400
800
1000
400
600
800
1000
diF /dt [A/μs]
diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus di/dt
Fig. 3 Typ. peak reverse current
IRM versus di/dt
VF [V]
Fig. 1 Typ. Forward current
versus VF
600
2.0
700
TVJ = 125°C
TVJ = 125°C
600
VR = 600 V
VR = 600 V
1.6
60 A
500
trr 400
Erec
[ns] 300
60 A
30 A
200
30 A
1.2
[mJ] 0.8
15 A
15 A
0.4
100
0
0.0
400
600
800
1000
diF /dt [A/µs]
Fig. 4 Dynamic parameters
Qrr, IRM versus di/dt
400
600
800
1000
diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus di/dt
Fig. 6 Typ. recovery energy
Erec versus di/dt
2
1
ZthJC
[K/W]
0.1
0.001
0.01
0.1
1
10
tp [s]
Fig. 7 Typ. transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20100623c
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