IXBR42N170

Preliminary Technical Information IXBR42N170 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 32A VCE(sat) ≤ 2.9V ISOPLUS247TM E153432 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 57 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1ms 300 A SSOA VGE = 15V, TVJ = 125°C, RG = 10Ω ICM = 100 A (RBSOA) Clamped inductive load VCES ≤ 1350 V PC TC = 25°C 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 20..120 / 4.5..27 Nm/lb.in. 2500 3000 V~ V~ 5 g TJ TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds FC Mounting force VISOL 50/60 Hz, RMS IISOL ≤ 1mA G Weight z z z BVCES IC = 250μA, VGE = 0V 1700 z VGE(th) IC = 250μA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 42A, VGE = 15V, Note 1 5.5 © 2008 IXYS CORPORATION, All rights reserved Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation Low gate drive requirement High power density z z Switched-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) Laser generator Capacitor discharge circuit AC switches V 50 μA 1.5 mA TJ = 125°C TJ = 125°C = Emitter Applications: z V E Advantages z Characteristic Values Min. Typ. Max. Isolated Tab Features z Symbol Test Conditions (TJ = 25°C unless otherwise specified) E G = Gate C = Collector z t = 1min t = 1s C 2.7 ±100 nA 2.9 V V DS100043(10/08) IXBR42N170 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfS 24 IC = 42A, VCE = 10V, Note 1 ISOPLUS247 (IXBR) Outline 32 S 3990 pF 225 pF Cres 70 pF Qg 188 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 42A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tr td(off) tf td(on) Resistive Switching times, TJ = 25°C IC = 42A, VGE = 15V VCE = 850V, RG = 10Ω 29 nC 76 nC 37 ns 139 ns 340 ns 665 ns 36 ns tr Resistive Switching times, TJ = 125°C 188 ns td(off) IC = 42A, VGE = 15V 330 ns VCE = 850V, RG = 10Ω 740 ns tf RthJC 0.62 RthCS °C/W ° C/W 0.15 Reverse Diode Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. VF IF = 42A, VGE = 0V 2.8 trr IF = 21A, VGE = 0V, -diF/dt = 100A/μs IRM VR = 100V V 1.32 μs 36 A Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBR42N170 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 300 90 VGE = 15V 13V 11V 80 70 240 9V 210 IC - Amperes IC - Amperes 60 50 40 7V 30 150 120 9V 60 10 7V 30 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 2 4 6 8 10 12 14 16 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 90 18 20 1.7 VGE = 15V 13V 11V 80 VGE = 15V 1.6 1.5 VCE(sat) - Normalized 70 IC - Amperes 11V 180 90 20 60 9V 50 40 7V 30 20 I C = 84A 1.4 1.3 1.2 I C = 42A 1.1 1.0 0.9 I 0.8 5V 10 C = 21A 0.7 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 -25 0 25 50 75 100 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 125 150 160 5.5 TJ = 25ºC 5.0 140 TJ = - 40ºC 25ºC 125ºC 120 IC - Amperes 4.5 VCE - Volts VGE = 15V 13V 270 4.0 I 3.5 C = 84A 3.0 100 80 60 42A 40 2.5 2.0 20 21A 0 1.5 5 6 7 8 9 10 11 12 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 VGE - Volts IXYS REF: B_42N170(7N)10-07-08 IXBR42N170 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 55 120 TJ = - 40ºC 50 110 100 45 TJ = 25ºC 80 35 IF - Amperes g f s - Siemens 90 25ºC 40 125ºC 30 25 20 TJ = 125ºC 70 60 50 40 15 30 10 20 5 10 0 0 0 20 40 60 80 100 120 140 160 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Fig. 9. Gate Charge 2.6 2.8 3.0 3.2 Fig. 10. Capacitance 16 10,000 VCE = 850V 14 Capacitance - PicoFarads I C = 42A I G = 10mA 12 VGE - Volts 2.4 VF - Volts IC - Amperes 10 8 6 4 Cies 1,000 Coes 100 Cres 2 f = 1 MHz 10 0 0 20 40 60 80 100 120 140 160 180 0 200 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1.00 110 100 90 Z(th)JC - ºC / W IC - Amperes 80 70 60 0.10 50 40 30 20 10 0 200 TJ = 125ºC RG = 10Ω dV / dt < 10V / ns 400 600 800 1000 1200 1400 1600 1800 VCE - Volts IXYS reserves the right to change limits, test conditions and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBR42N170 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 360 360 RG = 10Ω 320 VGE = 15V VCE = 850V I C = 84A t r - Nanoseconds t r - Nanoseconds 280 240 200 160 I C = 42A 320 RG = 10Ω 280 VCE = 850V VGE = 15V TJ = 125ºC 240 200 160 TJ = 25ºC 120 80 120 40 80 0 25 35 45 55 65 75 85 95 105 115 125 20 25 30 35 40 45 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 100 I C = 84A 400 80 300 60 I C = 42A 800 20 20 25 30 35 40 45 50 340 I C = 42A 600 320 500 300 25 35 45 RG = 10Ω, VGE = 15V 440 1200 420 1100 tf 1000 TJ = 125ºC, VGE = 15V 400 900 360 800 340 700 320 600 300 TJ = 25ºC, 125ºC 300 45 50 55 60 85 95 105 115 260 125 65 70 75 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 80 85 1800 td(off) - - - - 1600 1400 VCE = 850V 900 1200 800 1000 I C = 42A 700 800 I 600 C = 84A 600 500 400 260 400 200 240 300 280 400 40 75 t d(off) - Nanoseconds 380 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - VCE = 850V 35 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds tf 1100 30 55 TJ - Degrees Centigrade 1200 25 280 I C = 84A 300 55 1300 20 360 700 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 500 85 td(off) - - - - RG - Ohms 1000 80 RG = 10Ω, VGE = 15V 400 40 100 15 75 VCE = 850V t f - Nanoseconds 120 500 10 70 t d(off) - Nanoseconds VCE = 850V 200 65 380 tf 140 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V 600 60 900 160 tr 55 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 800 700 50 IC - Amperes 0 10 15 20 25 30 35 40 45 50 55 RG - Ohms IXYS REF: B_42N170(7N)10-07-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.