IXDR30N120D1

IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE(sat) typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 50 A IC90 TC = 90°C 30 A ICM TC = 90°C, tp = 1 ms 60 A RBSOA VGE = ±15 V, TJ = 125°C, RG = 47 Ω Clamped inductive load, L = 30 mH ICM = 50 VCEK < VCES A tSC (SCSOA) VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 47 Ω, non repetitive 10 µs PC TC = 25°C 200 95 W W TJ -55 ... +150 °C Tstg -55 ... +150 °C 2500 V~ 6 g VISOL Maximum Ratings IGBT Diode 50/60 Hz, RMS IISOL < 1 mA Weight Symbol Conditions V(BR)CES VGE = 0 V VGE(th) IC = 1 mA, VCE = VGE ICES VCE = VCES, TJ = 25°C TJ = 125°C IGES VCE = 0 V, VGE = ± 20 V VCE(sat) IC = 30 A, VGE = 15 V IXYS reserves the right to change limits, test conditions and dimensions © 2006 IXYS All rights reserved C = Collector E = Emitter Features • NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient for easy paralleling - MOS input, voltage controlled - fast recovery epitaxial diode • Epoxy meets UL 94V-0 • Isolated and UL registered E153432 Advantages Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 G = Gate • DCB Isolated mounting tab • Meets TO-247AD package Outline • Package for clip or spring mounting • Space savings • High power density Typical Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninteruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies V 4.5 6.5 V 1.5 mA mA ± 500 nA 2.9 V 2.5 2.4 0644 Short Circuit SOA Capability Square RBSOA 1-4 IXDR 30N120 D1 IXDR 30N120 Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg IC = 30 A, VGE = 15 V, VCE = 0.5 VCES td(on) tr td(off) tf Inductive load, TJ = 125°C IC = 30 A, VGE = ±15 V, VCE = 600 V, RG = 47 Ω 1650 pF 250 pF 110 pF 120 nC 100 ns 70 ns 500 ns 70 ns Eon 4.6 mJ Eoff 3.4 mJ RthJC RthCH ISOPLUS247TM OUTLINE 0.6 K/W Package with heatsink compound Reverse Diode (FRED) K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Conditions VF IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 90°C IRM IF = 30 A, -diF/dt = 400 A/µs, VR = 600 V trr VGE = 0 V, TJ = 125°C trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V RthJC IXYS reserves the right to change limits, test conditions and dimensions © 2006 IXYS All rights reserved 0.25 2.5 2.0 2.75 V V 50 27 A A 20 A 200 ns 40 ns The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side This drawing will meet all dimensions requirement of JEDEC outline TO-247 AD except screw hole and except Lmax. 1.3 K/W 0644 Symbol 2-4 IXDR 30N120 D1 IXDR 30N120 60 60 VGE=17V TJ = 25°C A 50 15V 13V IC VGE=17V TJ = 125°C 15V A 50 IC 40 13V 40 11V 11V 30 30 20 20 9V 9V 10 10 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 60 Fig. 2 3.5 V Typ. output characteristics 80 VCE = 20V TJ = 125°C A 70 TJ = 25°C A 50 IC Typ. output characteristics 2.5 3.0 VCE IF 40 60 TJ = 25°C 50 40 30 30 20 20 10 10 0 0 5 6 7 8 9 10 0 11 V 1 2 Fig. 3 Typ. transfer characteristics Fig. 4 V 4 Typ. forward characteristics of free wheeling diode 300 60 20 V VCE = 600V IC 3 VF VGE = 25A A ns IRM VGE 15 trr trr 200 40 10 TJ = 125°C VR = 600V IF = 30A IRM 5 IXDH/..R30N120 0 0 0 20 Fig. 5 40 60 80 100 120 140 nC QG Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions © 2006 IXYS All rights reserved 100 0 Fig. 6 200 400 600 800 A/μs -di/dt 0 1000 Typ. turn off characteristics of free wheeling diode 0644 20 3-4 IXDR 30N120 D1 IXDR 30N120 14 140 6 12 mJ ns 120 mJ 5 Eon 10 100 8 tr 4 Eon 2 VCE = 600V VGE = ±15V 60 RG = 47Ω TJ = 125°C 40 0 0 Eoff Eoff td(off) 400 t 4 10 20 30 40 3 VCE = 600V VGE = ±15V 300 2 RG = 47Ω TJ = 125°C 200 20 1 0 0 50 A 0 0 10 20 30 40 mJ 10 Eon 8 50 A IC Fig. 7 Typ. turn on energy and switching times versus collector current Fig. 8 Typ. turn off energy and switching times versus collector current 5 240 VCE = 600V VGE = ±15V IC = 25A TJ = 125°C 100 tf IC 12 ns 500 80 td(on) 6 t 600 td(on) ns Eon 180 tr t 6 1500 VCE = 600V VGE = ±15V IC = 25A TJ = 125°C mJ 4 Eoff ns td(off) 1200 Eoff t 3 900 2 600 1 300 120 4 60 2 0 0 40 80 120 160 RG 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor ICM tf 0 0 200 Ω 240 40 80 120 0 200 Ω 240 160 RG Fig.10 Typ. turn off energy and switching times versus gate resistor 60 10 A 50 K/W 1 diode IGBT ZthJC 40 RG = 47Ω TJ = 125°C VCEK < VCES 30 0.1 0.01 20 0 0 200 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions © 2006 IXYS All rights reserved single pulse 0.0001 0.00001 0.0001 IXDR30N120 0.001 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal impedance 0644 0.001 10 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.