IXDR35N60BD1

IXDR 35N60 BD1 VCES = 600 V = 38 A IC25 VCE(sat) typ = 2.2 V IGBT with optional Diode High Speed, Low Saturation Voltage ISOPLUS 247TM C G G C E E G = Gate, C = Collector , Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 38 A IC90 TC = 90°C 24 A ICM TC = 90°C, tp =1 ms 48 A RBSOA VGE = ±15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load, L = 30 µH ICM = 110 VCEK < VCES A tSC (SCSOA) VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 10 Ω, non repetitive 10 µs PC TC = 25°C Features ● ● ● ● ● ● ● ● ● ● 125 50 W W TJ -55 ... +150 °C Tstg -55 ... +150 °C 2500 V~ 20...120 N 6 g ● ● ● VISOL 50/60 Hz RMS; IISOL ≤ 1 mA FC mounting force with clip Weight typical ● ● ● ● Conditions V(BR)CES VGE = 0 V VGE(th) IC ICES VCE = VCES Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 = 0.7 mA, VCE = VGE IGES VCE = 0 V, VGE = ± 20 V VCE(sat) IC = 35 A, VGE = 15 V IXYS reserves the right to change limits, test conditions and dimensions © 2006 IXYS All rights reserved ● AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies V 3 TJ = 25°C TJ = 125°C DCB Isolated mounting tab Meets TO-247AD package Outline Package for clip or spring mounting Space savings High power density Typical Applications ● Symbol NPT IGBT technology low switching losses low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode Epoxy meets UL 94V-0 Isolated and UL registered E153432 Advantages ● IGBT Diode E = Emitter TAB = Collector 5 1 V 0.1 mA mA ± 500 nA 2.2 2.7 V 0644 Symbol Isolated back surface 1-4 IXDR 35N60 BD1 Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies 1600 pF 150 pF 90 pF 140 nC td(on) 30 ns tr 45 ns 320 ns Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg td(off) tf IC = 35 A, VGE = 15 V, VCE = 480V Inductive load, TJ = 125°C IC = 35 A, VGE = ±15 V, VCE = 300 V, RG = 10 Ω 70 ns Eon 1.6 mJ Eoff 0.8 mJ 0.25 1 K/W K/W RthJC RthCH Package with heatsink compound Reverse Diode (FRED) [D1 version only] Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Conditions VF IF = 35 A, VGE = 0 V IF = 35 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 90°C IRM IF = 15 A, -diF/dt = 400 A/µs, VR = 300 V 13 A trr VGE = 0 V, TJ = 125°C 90 ns trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns RthJC IXYS reserves the right to change limits, test conditions and dimensions © 2006 IXYS All rights reserved ISOPLUS247TM OUTLINE 2.1 1.6 2.3 V V 35 18 A A The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side This drawing will meet all dimensions requirement of JEDEC outline TO-247 AD except screw hole and except Lmax. 2.3 K/W 0644 Symbol 2-4 IXDR 35N60 BD1 80 A 70 IC 80 VGE= 17V 15V 13V 11V 9V IC 60 50 40 40 30 30 20 20 10 TJ = 125°C TJ = 25°C 0 0 1 2 3 4 0 0 7 V 5 6 VCE 1 2 3 4 5 6 Fig. 2 Typ. output characteristics 80 80 A 70 70 A 60 IF 60 50 50 40 40 30 30 20 20 TJ = 125°C TJ = 125°C TJ = 25°C 10 0 4 5 6 7 TJ = 25°C 10 VCE = 20V 3 7 V VCE Fig. 1 Typ. output characteristics IC 9V 60 50 10 11V VGE= 17V 15V 13V A 70 8 0 0 9 V 10 1 VGE Fig. 3 Typ. transfer characteristics 2 VF V 3 Fig. 4 Typ. forward characteristics of free wheeling diode 120 30 15 trr V 12 25 A ns 20 80 trr IRM VGE 9 15 6 40 10 3 TJ = 125°C VR = 300V IF = 15A IRM 5 IXDx35N60B 0 0 0 20 40 60 80 100 120 nC QG Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions © 2006 IXYS All rights reserved 0 200 400 600 800 A/μs -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 0644 VCE = 480V IC = 30A 3-4 IXDR 35N60 BD1 4 Eon mJ VCE = 300V VGE = ±15V 3 RG = 10Ω TJ = 125°C td(on) 80 2.0 ns mJ 60 1.5 t ns td(off) 300 t Eoff Eon 2 Eoff 400 1.0 40 200 VCE = 300V VGE = ±15V tr 1 RG = 10Ω TJ = 125°C 0.5 20 tf 0 10 0.0 10 0 20 30 40 60 A 50 0 20 30 40 IC 2.0 mJ ns 45 Eon Eon 1.5 tr 1.0 VCE = 300V VGE = ±15V IC = 35A TJ = 125°C 0.0 5 10 15 20 25 30 RG mJ t Eoff 1.5 30 1.0 15 0.5 0 35 Ω 40 800 VCE = 300V VGE = ±15V IC = 35A TJ = 125°C 120 A 100 td(off) ns 600 Eoff t 400 200 tf 0.0 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor ICM A 2.0 60 0 60 Fig. 8 Typ. turn off energy and switching times versus collector current td(on) 0.5 50 IC Fig. 7 Typ. turn on energy and switching times versus collector current 100 5 10 15 20 25 30 RG 0 35 Ω 40 Fig.10 Typ. turn off energy and switching times versus gate resistor 10 diode K/W 1 IGBT ZthJC 80 0.1 60 single pulse 0.01 40 RG = 10Ω TJ = 125°C 0.001 0 0 100 200 300 400 500 600 700 V VCE Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions © 2006 IXYS All rights reserved 0.0001 10-5 IXDR30N60BD1 10-4 10-3 10-2 10-1 100 s 101 t Fig. 12 Typ. transient thermal impedance 0644 20 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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