IXFA80N25X3-TRL

IXFA80N25X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) = 250V = 80A  16m  N-Channel Enhancement Mode Avalanche Rated TO-263 G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 80 A IDM TC = 25C, Pulse Width Limited by TJM 220 A IA TC = 25C 40 A EAS TC = 25C 1.2 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 390 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 50 260 °C °C/min °C 10..65 / 2.2..14.6 N/lb TL dT/dt TSOLD Maximum Lead Temperature for Soldering Heating / Cooling rate, 175C - 210C 1.6 mm (0.062in.) from Case for 10s FC Mounting Force Weight 2.5 g D (Tab) G = Gate S = Source D = Drain Tab = Drain Features     International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 250 VGS(th) VDS = VGS, ID = 1.5mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 4.5 V    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 100 nA TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved 5 350 A A 16 m DS100899(4/18) IXFA80N25X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 38 RGi Gate Input Resistance Ciss Coss TO-263 (IXFA) Outline 64 S 1.6  5430 pF 890 pF 1.6 pF VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS 320 1410 pF pF 30 ns 17 ns 65 ns 8 ns 83 nC 27 nC 24 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 1 = Gate 2 = Drain 3 = Source 4 = Drain 0.32 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 80 A Repetitive, pulse Width Limited by TJM 320 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 40A, -di/dt = 100A/μs 120 600 10 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA80N25X3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 80 350 VGS = 10V 9V 70 VGS = 10V 300 8V 9V 250 50 I D - Amperes I D - Amperes 60 7V 40 30 6V 8V 200 150 7V 100 20 50 10 5V 0 6V 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 0 1.4 2 4 6 8 10 VDS - Volts 80 3.0 VGS = 10V 8V R DS(on) - Normalized I D - Amperes 7V 50 40 6V 30 20 4V 0 4.6 1 1.5 20 22 24 2.2 I D = 80A 1.8 I D = 40A 1.4 1.0 0.2 2 2.5 -50 3 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 150 VGS = 10V 4.2 1.2 BVDSS / VGS(th) - Normalized 3.8 o RDS(on) - Normalized 18 0.6 5V 10 0.5 16 VGS = 10V 2.6 60 0 14 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 70 12 VDS - Volts TJ = 125 C 3.4 3.0 2.6 2.2 o TJ = 25 C 1.8 1.4 BVDSS 1.1 1.0 0.9 VGS(th) 0.8 0.7 1.0 0.6 0.6 0 50 100 150 200 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 250 300 350 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA80N25X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 90 140 80 120 70 100 I D - Amperes I D - Amperes 60 50 40 30 80 60 o TJ = 125 C o 25 C 40 o - 40 C 20 20 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 140 400 o TJ = - 40 C 350 120 300 o 25 C I S - Amperes g f s - Siemens 100 80 o 125 C 60 250 200 150 o TJ = 125 C 40 100 o TJ = 25 C 20 50 0 0 0 20 40 60 80 100 120 0 140 0.2 0.4 0.6 I D - Amperes 0.8 1 1.2 1.4 1.6 1.8 VSD - Volts Fig. 11. Gate Charge Fig. 12. Capacitance 10 100,000 VDS = 125V I D = 40A I G = 10mA Capacitance - PicoFarads VGS - Volts 8 6 4 2 10,000 Ciss 1,000 Coss 100 Crss 10 f = 1 MHz 0 1 0 10 20 30 40 50 60 70 80 90 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA80N25X3 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 1000 14 RDS(on) Limit 25μs 100 10 100μs I D - Amperes E OSS - MicroJoules 12 8 6 4 10 1 o TJ = 150 C o TC = 25 C Single Pulse 2 1ms 0.1 0 0 50 100 150 200 250 10 300 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N25X3 (25-S301) 3-07-17-A