IXFB100N50P

IXFB100N50P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   500V 100A  49m 200ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 100 A IDM TC = 25C, Pulse Width Limited by TJM 250 A IA EAS TC = 25C TC = 25C 100 5 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 20 V/ns PD TC = 25C 1890 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 30..120/6.7..27 N/lb 10 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force Weight G D S G = Gate S = Source Tab D = Drain Tab = Drain Features     Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages   Easy to Mount Space Savings Applications   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • IDSS, Note 1  V 5.0 V 200 nA TJ = 125C © 2015 IXYS CORPORATION, All Rights Reserved    DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications 25 A 2 mA 49 m DS99496F(2/15) IXFB100N50P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 50A, Note 1 50 80 S 20 nF 1700 pF 140 pF 36 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS RG = 1 (External) Qg(on) Qgs PLUS264TM (IXFB) Outline 29 ns 110 ns 26 ns 240 nC 96 nC 78 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd 0.066C/W RthJC RthCS 0.13 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 100 A ISM Repetitive, Pulse Width Limited by TJM 250 A VSD IF = 100A, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 25A, -di/dt = 100A/s Note 0.6 6.0 VR = 100V, VGS = 0V 250 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB100N50P Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 100 VGS = 10V 8V VGS = 10V 9V 200 80 I D - Amperes I D - Amperes 160 7V 60 40 8V 120 7V 80 6V 20 40 6V 5V 0 0 0 1 2 3 4 5 0 5 10 15 20 25 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 50A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 100 3.2 VGS = 10V 7V VGS = 10V 2.8 R DS(on) - Normalized I D - Amperes 80 60 6V 40 2.4 I D = 100A 2.0 I D = 50A 1.6 1.2 20 5V 0.8 0.4 0 0 2 4 6 8 -50 10 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 50A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.2 VGS = 10V 100 TJ = 125ºC 80 2.4 I D - Amperes RDS(on) - Normalized 2.8 2.0 1.6 60 40 TJ = 25ºC 20 1.2 0.8 0 0 40 80 120 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 160 200 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFB100N50P Fig. 8. Transconductance Fig. 7. Input Admittance 160 160 140 140 120 120 100 g f s - Siemens I D - Amperes TJ = - 40ºC TJ = 125ºC 25ºC - 40ºC 80 60 25ºC 100 60 40 40 20 20 0 125ºC 80 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 20 40 60 VGS - Volts 100 120 140 160 180 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 10 VDS = 250V 9 I D = 50A 250 8 I G = 10mA 7 200 VGS - Volts I S - Amperes 80 I D - Amperes 150 100 TJ = 125ºC 6 5 4 3 2 TJ = 25ºC 50 1 0 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 VSD - Volts 75 100 125 150 175 200 225 250 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1,000 RDS(on) Limit Ciss 25µs 10,000 I D - Amperes Capacitance - PicoFarads f = 1 MHz Coss 1,000 100 100µs 1ms 10ms DC 10 TJ = 150ºC TC = 25ºC Single Pulse Crss 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1000 IXFB100N50P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Fig. 14. Cauer Thermal Network  i Ri (CW)  Ci (J/C) 1 2 3 4 © 2015 IXYS CORPORATION, All Rights Reserved 0.0011707 0.0252980 0.0280620 0.0091690 0.0031990 0.0449880 0.7284100 IXYS REF: F_100N50P(9S) 2-08-06-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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