IXFC15N80Q

IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS(on) Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 13 A IDM TC = 25°C, pulse width limited by TJM 60 A IAR TC = 25°C 15 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns 230 W -40 ... +150 150 -40 ... +150 °C °C °C 300 °C 2500 V TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min leads to tab FC mounting force with clip 11...65 / 2.5...15 N/lb 2 g G D S G = Gate S = Source Isolated back surface* D = Drain Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(