IXFC30N60P

PolarHVTM HiPerFET Power MOSFET VDSS = 600 V ID25 = 15 A Ω RDS(on) ≤ 250 mΩ ≤ 250 ns trr IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM 80 A IAR TC = 25°C 30 A EAR TC = 25°C 50 mJ EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 3 Ω 10 V/ns PD TC = 25°C 166 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, t = 1minute, leads-to-tab FC Mounting Force Weight ISOPLUS220 ISOPLUS247 (IXFC) (IXFR) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) N/lb N/lb 2 5 g g Characteristic Values Min. Typ. Max. 600 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±30 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 125°C VGS = 10 V, ID = 15 A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved V~ 11..65 / 2.5..15 20..120 / 4.5..25 VGS = 0 V, ID = 250 μA RDS(on) G 2500 BVDSS ISOPLUS220TM (IXFC) E153432 V 5.0 V ±100 nA 25 500 μA μA 250 mΩ D Isolated back surface S ISOPLUS247TM (IXFR) E153432 Isolated back surface G = Gate S = Source D = Drain Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(