IXFC52N30P

IXFC52N30P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = =   300V 24A  80m 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS220TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 24 A IDM TC = 25C, Pulse Width Limited by TJM 150 A IA TC = 25C 52 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 100 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 2500 3000 V~ V~ 11..66 / 2.5..14.6 N/lb. 2 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL  1mA Md t = 1min t = 1s Mounting force Weight G D S G = Gate S = Source Isolated Tab D = Drain Features       UL Recognized Package Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 300 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V 25 A 1 mA RDS(on) V 5.0  Applications V  TJ = 125C VGS = 10V, ID = 26A, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved 80 m High Power Density Easy to Mount Space Savings     Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99246G(10/13) IXFC52N30P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 26A, Note 1 20 Ciss Coss 30 S 3490 pF VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 52A RG = 4 (External) Qg(on) Qgs ISOPLUS220TM Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 26A Qgd 550 pF 130 pF 24 ns 22 ns 60 ns 20 ns 110 nC 25 nC 53 nC Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3. 1.25 C/W RthJC RthCS 0.21 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 52 A Repetitive, pulse width limited by TJM 150 A VSD IF = 52A, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 25A, -di/dt = 100A/s 160 800 7 VR = 100V, VGS = 0V Ref: IXYS CO 0177 R0 200 ns nC A Note 1: Pulse test, t  300s; duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFC52N30P Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC VGS = 10V 8V 50 VGS = 10V 9V 140 7V 120 40 8V I D - Amperes I D - Amperes 100 30 6V 20 80 7V 60 40 6V 10 20 5V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 26A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 3.0 VGS = 10V 8V 7V 50 VGS = 10V 2.6 RDS(on) - Normalized I D - Amperes 40 6V 30 20 I D = 52A 2.2 I D = 26A 1.8 1.4 1.0 10 5V 0.6 0 0.2 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 26A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 28 4.0 VGS = 10V 24 TJ = 125ºC 3.0 20 I D - Amperes RDS(on) - Normalized 3.5 2.5 2.0 TJ = 25ºC 1.5 16 12 8 1.0 4 0.5 0 0 20 40 60 80 I D - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 100 120 140 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFC52N30P Fig. 7. Input Admittance Fig. 8. Transconductance 60 100 90 TJ = - 40ºC 50 80 g f s - Siemens I D - Amperes 70 60 50 TJ = 125ºC 25ºC - 40ºC 40 25ºC 40 125ºC 30 20 30 20 10 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 10 20 30 40 VGS - Volts 50 60 70 80 90 100 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 160 VDS = 150V 9 140 I D = 26A 8 I G = 10mA 120 VGS - Volts I S - Amperes 7 100 80 60 TJ = 125ºC 5 4 3 TJ = 25ºC 40 6 2 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 20 VSD - Volts 40 60 80 100 120 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 1000 C iss 25µs I D - Amperes Capacitance - PicoFarads RDS(on) Limit 100 1,000 Coss 100µs 10 1ms 10ms 1 TJ = 150ºC TC = 25ºC Single Pulse C rss f = 1 MHz DC 0.1 100 0 5 10 15 20 25 30 35 40 VDS - Volts 10 100 1,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_52N30P (6S)6-13-06-C IXFC52N30P Fig. 13. Maximum Transient Thermal Impedance 10 Z (th )JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Second © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_52N30P (6S)9-26-13