IXFC60N20

ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 60N20 ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS TJ = 25°C to 150°C 200 VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 VGS Continuous VGSM Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C EAR EAS TC = 25°C TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C TJM Tstg TL Symbol Test Conditions VDSS V GS = 0 V, ID = 250 µA VGS(th) V DS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS V DS = VDSS VGS = 0 V RDS(on) V GS = 10 V, ID = IT Notes 1, 2 © 2001 IXYS All rights reserved ISOPLUS 220TM V ±20 V ±30 V 60 A 240 A 60 A 30 1.0 mJ J 5 V/ns W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 3 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 V 4 ±100 TJ = 25°C TJ = 125°C V A Ω mΩ ns V 230 1.6 mm (0.062 in.) from case for 10 s O Weight BS TJ O PD Maximum Ratings = 200 = 60 = 33 ≤ 250 E Test Conditions LE T Symbol VDSS ID25 RDS(on) trr V nA 25 µA 1 mA 33 mΩ G D S G = Gate, S = Source Isolated back surface* D = Drain, * Patent pending Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(