IXFH100N30X3

Advance Technical Information IXFT100N30X3HV IXFH100N30X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) = =  300V 100A  13.5m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 100 200 A A IA TC = 25C 50 A EAS TC = 25C 1.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 480 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 4 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268HV TO-247 S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V  V 4.5 Applications V  100 nA  RDS(on) 10 A 750 A TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2017 IXYS CORPORATION, All Rights Reserved 10.6 13.5 m High Power Density Easy to Mount Space Savings    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100862A(11/17) IXFT100N30X3HV IXFH100N30X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 50A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 48 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 80 S 1.8  7660 pF 1140 pF 3 pF 430 1950 pF pF 29 ns 30 ns 114 ns 14 ns 122 nC 35 nC 36 nC Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.26 C/W RthJC RthCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 100 A ISM Repetitive, pulse Width Limited by TJM 400 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 50A, -di/dt = 100A/μs 130 720 11 VR = 100V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT100N30X3HV IXFH100N30X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 400 100 VGS = 10V 9V 90 VGS = 10V 8V 350 9V 80 I D - Amperes 70 I D - Amperes 300 7V 60 50 40 6V 8V 250 200 7V 150 30 100 6V 20 50 5V 10 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 VDS - Volts 25 Fig. 4. RDS(on) Normalized to ID = 50A Value vs. Junction Temperature o 100 3.0 VGS = 10V 8V RDS(on) - Normalized 70 60 6V 50 40 30 VGS = 10V 2.6 7V 80 I D - Amperes 20 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C 90 15 5V 2.2 I D = 100A 1.8 I D = 50A 1.4 1.0 20 0.6 10 4V 0.2 0 0 0.5 1 1.5 2 2.5 -50 3 -25 0 25 VDS - Volts 125 150 BVDSS / VGS(th) - Normalized 1.2 3.5 RDS(on) - Normalized 100 1.3 VGS = 10V 4.0 75 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature Fig. 5. RDS(on) Normalized to ID = 50A Value vs. Drain Current 4.5 50 TJ - Degrees Centigrade o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 50 100 150 200 250 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 300 350 400 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT100N30X3HV IXFH100N30X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 180 100 160 VDS = 10V 140 80 I D - Amperes I D - Amperes 120 60 40 100 80 o TJ = 125 C 60 o 25 C 40 20 o - 40 C 20 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 TC - Degrees Centigrade Fig. 9. Transconductance 160 5.5 6.0 6.5 7.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode 300 o TJ = - 40 C 140 VDS = 10V 250 120 o 200 100 I S - Amperes g f s - Siemens 25 C o 125 C 80 60 150 o TJ = 125 C 100 40 o TJ = 25 C 50 20 0 0 0 20 40 60 80 100 120 140 160 180 0.3 0.4 0.5 0.6 0.7 0.9 1.0 1.1 1.2 1.3 1.4 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 9 VDS = 150V 8 I D = 50A Capacitance - PicoFarads 10 I G = 10mA 7 VGS - Volts 0.8 VSD - Volts I D - Amperes 6 5 4 3 2 10,000 Ciss 1,000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 20 40 60 80 100 120 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFT100N30X3HV IXFH100N30X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 18 16 RDS(on) Limit 25μs 100 12 I D - Amperes EOSS - MicroJoules 14 10 8 100μs 10 6 1 4 o TJ = 150 C 1ms o TC = 25 C Single Pulse 2 DC 0 10ms 0.1 0 1 50 100 150 200 VDS - Volts 1 Fig. 15.250 Maximum300 Transient Thermal Impedance 10 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.4 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: F_100N30X3 (26-S301) 11-02-17 IXFT100N30X3HV IXFH100N30X3 TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-247 Outline D A A2 A2 Q + R A 0P O + 0K M D B M B E S D2 + D1 D 0P1 1 2 3 4 ixys option L1 C E1 L A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.