IXFH150N25X3HV

Preliminary Technical Information IXFT150N25X3HV IXFH150N25X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) = 250V = 150A  9.0m  N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 150 300 A A IA TC = 25C 75 A EAS TC = 25C 1.8 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 735 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 4 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268HV TO-247 S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 250 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V  V 4.5 Applications V  100 nA  RDS(on) 25 A 1 mA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2017 IXYS CORPORATION, All Rights Reserved. 7.7 9.0 m High Power Density Easy to Mount Space Savings    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100838C(11/17) IXFT150N25X3HV IXFH150N25X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 60 Ciss Coss 105 S 1.5  10.4 nF 1.6 nF 1.8 pF 650 2500 pF pF 30 ns 30 ns 115 ns 10 ns 154 nC 50 nC 40 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.17 C/W RthJC RthCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 150 A ISM Repetitive, pulse Width Limited by TJM 600 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 75A, -di/dt = 100A/μs 140 770 11 VR = 100V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT150N25X3HV IXFH150N25X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 550 160 VGS = 10V 9V 140 8V 450 120 9V 400 7V 100 I D - Amperes I D - Amperes VGS = 10V 500 80 60 6V 350 8V 300 250 7V 200 150 40 6V 100 20 5V 50 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 75A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 160 2.8 VGS = 10V 8V 140 VGS = 10V 2.4 120 RDS(on) - Normalized I D - Amperes 7V 100 80 6V 60 2.0 I D = 150A 1.6 I D = 75A 1.2 40 5V 0.8 20 4V 0.4 0 0 4.5 0.5 1 1.5 2.5 -50 3 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 75A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 3.5 BVDSS / VGS(th) - Normalized 4.0 RDS(on) - Normalized 2 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 1.0 0.5 0.5 0 50 100 150 200 250 300 350 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved. 400 450 500 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT150N25X3HV IXFH150N25X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 200 160 180 140 160 120 I D - Amperes I D - Amperes 140 100 80 60 120 100 80 o TJ = 125 C 60 o 25 C 40 40 20 o - 40 C 20 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 7.0 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 240 500 o TJ = - 40 C 400 160 o I S - Amperes g f s - Siemens 200 25 C 120 o 125 C 80 300 200 o TJ = 125 C 100 40 o TJ = 25 C 0 0 0 40 80 120 160 200 0.2 240 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 125V 9 Capacitance - PicoFarads I D = 75A 8 I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 2 10,000 Ciss 1,000 Coss 100 Crss 10 f = 1 MHz 1 1 0 0 20 40 60 80 100 120 140 160 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFT150N25X3HV IXFH150N25X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 20 RDS(on) Limit 18 16 25μs 14 I D - Amperes E OSS - MicroJoules 100 12 10 8 100μs 10 6 1ms 1 o 4 TJ = 150 C 2 TC = 25 C Single Pulse o 0 1 0 50 100 150 Fig. 15. Maximum Transient0.1 Thermal Impedance 200 250 1 10ms DC 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2017 IXYS CORPORATION, All Rights Reserved. IXYS REF: F_150N25X3 (27-S301) 5-24-17 IXFT150N25X3HV IXFH150N25X3 TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-247 Outline D A A2 A2 Q + R A 0P O + 0K M D B M B E S D2 + D1 D 0P1 1 2 3 4 ixys option L1 C E1 L A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.