IXFH170N25X3

Preliminary Technical Information IXFT170N25X3HV IXFH170N25X3 IXFK170N25X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 = 250V = 170A  7.4m  RDS(on) TO-268HV (IXFT) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IL(RMS) TC = 25C External Lead Current Limit 170 160 A A IDM TC = 25C, Pulse Width Limited by TJM 400 A IA TC = 25C 85 A EAS TC = 25C 2.3 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 890 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C G = Gate S = Source 300 260 °C °C Features 1.13 / 10 Nm/lb.in 4 6 10 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247 & TO-264) Weight TO-268HV TO-247 TO-264 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 250 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TO-247 (IXFH) G G D S       V 100 nA 10 A 1 mA 6.1 D (Tab) D = Drain Tab = Drain International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance 7.4 m High Power Density Easy to Mount Space Savings Applications      © 2017 IXYS CORPORATION, All Rights Reserved. D (Tab) TO-264 (IXFK)  TJ = 125C S Advantages V 4.5 D Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100809C(11/17) IXFT170N25X3HV IXFH170N25X3 IXFK170N25X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 66 Ciss Coss 110 S 1.3  13.5 nF 2.3 nF 1.6 pF 800 3280 pF pF 18 ns 10 ns 62 ns 7 ns 190 nC 55 nC 45 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.14 C/W RthJC RthCS TO-247 TO-264 0.21 0.15 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 170 A ISM Repetitive, pulse Width Limited by TJM 680 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 85A, -di/dt = 100A/μs 140 770 11 VR = 100V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT170N25X3HV IXFH170N25X3 IXFK170N25X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 800 180 VGS = 10V 8V 160 VGS = 10V 700 7V 140 600 I D - Amperes I D - Amperes 120 100 6V 80 60 9V 5V 8V 500 400 7V 300 200 40 6V 100 20 4V 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 VDS - Volts 2.8 180 VGS = 10V 8V 30 VGS = 10V 2.4 RDS(on) - Normalized 7V 140 120 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 85A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 160 20 VDS - Volts 6V 100 80 5V 60 2.0 I D = 170A 1.6 I D = 85A 1.2 40 0.8 4V 20 0.4 0 0 4.0 0.5 1 1.5 2 2.5 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 85A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 150 1.2 VGS = 10V 3.5 BVDSS / VGS(th) - Normalized o TJ = 125 C RDS(on) - Normalized -50 3 3.0 2.5 2.0 o TJ = 25 C 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 0.7 VGS(th) 0.6 0.5 BVDSS 0.4 0.5 0 100 200 300 400 500 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved. 600 700 800 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT170N25X3HV IXFH170N25X3 IXFK170N25X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 180 250 160 External Lead Current Limit 140 200 I D - Amperes I D - Amperes 120 100 80 60 150 100 o TJ = 125 C o 25 C 40 o - 40 C 50 20 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 240 600 o TJ = - 40 C 500 o 160 400 25 C I S - Amperes g f s - Siemens 200 o 120 125 C 80 300 200 o TJ = 25 C 40 o TJ = 125 C 100 0 0 0 40 80 120 160 200 240 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Fig. 12. Capacitance Fig. 11. Gate Charge 10 100,000 9 VDS = 125V I D = 85A 8 Capacitance - PicoFarads I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 2 Ciss 10,000 1,000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 20 40 60 80 100 120 140 160 180 200 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFT170N25X3HV IXFH170N25X3 IXFK170N25X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 24 RDS(on) Limit 25μs 20 16 100μs I D - Amperes EOSS - MicroJoules 100 12 10 8 1ms 1 o TJ = 150 C 4 o TC = 25 C Single Pulse 0 DC 10ms 100ms 0.1 0 40 80 120 160 200 240 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2017 IXYS CORPORATION, All Rights Reserved. IXYS REF: F_170N25X3 (28-S301) 4-24-17 IXFT170N25X3HV IXFH170N25X3 IXFK170N25X3 TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-264 Outline TO-247 Outline D A A2 A2 B E Q + R A 0P O + 0K M D B M S D2 + D1 D 0P1 1 2 3 4 ixys option L1 C E1 L A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Terminals: 1 = Gate 2 = Drain 3 = Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.