IXFH180N20X3

Preliminary Technical Information IXFT180N20X3HV IXFH180N20X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 = 200V = 180A  7.5m  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT..HV) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IL(RMS) IDM TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 180 160 320 A A A IA TC = 25C 90 A EAS TC = 25C 2.2 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 735 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 4 6 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268HV TO-247 S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 200 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V  V 4.5 Applications V  100 nA  RDS(on) 25 A 1 mA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2017 IXYS CORPORATION, All Rights Reserved. 6.3 7.5 m High Power Density Easy to Mount Space Savings    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100842C(11/17) IXFT180N20X3HV IXFH180N20X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 70 Ciss Coss 120 S 1.5  10.3 nF 1.7 nF 5.2 pF 810 2540 pF pF 30 ns 28 ns 100 ns 12 ns 154 nC 50 nC 45 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.17 C/W RthJC RthCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 180 A ISM Repetitive, pulse Width Limited by TJM 720 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 90A, -di/dt = 100A/μs 120 550 9 VR = 100V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT180N20X3HV IXFH180N20X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 600 180 VGS = 10V 8V 160 VGS = 10V 7V 9V 500 140 I D - Amperes I D - Amperes 8V 400 120 100 6V 80 60 300 7V 200 6V 40 100 5V 20 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 15 VDS - Volts 180 2.8 VGS = 10V 8V 30 VGS = 10V 2.4 RDS(on) - Normalized 7V 140 120 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 160 20 VDS - Volts 6V 100 80 60 5V 2.0 I D = 180A 1.6 I D = 90A 1.2 40 0.8 20 4V 0.4 0 0 4.5 0.5 1 1.5 2 2.5 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 90A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 BVDSS / VGS(th) - Normalized 4.0 3.5 RDS(on) - Normalized -50 3 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 0.7 VGS(th) 0.6 1.0 0.5 0.5 0 100 200 300 400 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved. 500 600 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT180N20X3HV IXFH180N20X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 240 180 VDS = 10V 160 200 External Lead Current Limit 140 160 I D - Amperes I D - Amperes 120 100 80 60 120 o TJ = 125 C 80 o 25 C o - 40 C 40 40 20 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 7.0 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 250 500 o TJ = - 40 C VDS = 10V 400 o 25 C I S - Amperes g f s - Siemens 200 150 o 125 C 100 300 200 o TJ = 125 C 50 100 0 o TJ = 25 C 0 0 40 80 120 160 200 240 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 100V 9 I D = 90A 8 Capacitance - PicoFarads I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 2 10,000 Ciss 1,000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 20 40 60 80 100 120 140 160 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFT180N20X3HV IXFH180N20X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 16 RDS(on) Limit 14 25μs 100 10 I D - Amperes E OSS - MicroJoules 12 8 6 100μs 10 1ms 4 1 o TJ = 150 C 10ms DC o TC = 25 C Single Pulse 2 0 0.1 0 1 50 100 Fig. Transient Thermal Impedance 15015. Maximum200 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2017 IXYS CORPORATION, All Rights Reserved. IXYS REF: F_180N20X3 (27-S202) 6-15-17 IXFT180N20X3HV IXFH180N20X3 TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-247 Outline D A A2 A2 Q + R A 0P O + 0K M D B M B E S D2 + D1 D 0P1 1 2 3 4 ixys option L1 C E1 L A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.