IXFH34N65X3

IXFH34N65X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) = 650V = 34A  100m D N-Channel Enhancement Mode Avalanche Rated G S TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 34 A IDM TC = 25C, Pulse Width Limited by TJM 48 A IA TC = 25C 5 A EAS TC = 25C 750 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD Maximum Ratings TC = 25C 446 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 °C TJ TL Md Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque G Weight Nm/lb.in 6 S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  1.13 / 10 D   High Power Density Easy to Mount Space Savings g Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 2.5mA 3.2 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V   ©2021 Littelfuse, Inc. 5.2 V Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 100 nA TJ = 125C 25 A 3 mA 100 m DS101014B(09/21) IXFH34N65X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 13 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 22 S 1.7  2025 pF 2800 pF 2.6 pF 100 440 pF pF Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 24 ns 10 ns 47 ns 6 ns 29 nC 11 nC 10 nC 0.28 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 34 A Repetitive, Pulse Width Limited by TJM 136 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 17A, -di/dt = 100A/µs 150 1.05 14.0 ns µC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFH34N65X3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 80 VGS = 10V 32 V GS = 10V 70 28 9V 60 8V 20 I D - Amperes I D - Amperes 24 16 12 9V 50 40 8V 30 7V 20 8 4 7V 10 6V 6V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 17A Value vs. Junction Temperature 3.8 VGS = 10V 9V 32 3.4 VGS = 10V 28 3.0 I D - Amperes RDS(on) - Normalized 8V 24 20 7V 16 12 6V 8 4 I 2.2 D = 34A 1.8 I D = 17A 1.4 1.0 0.6 5V 0 0.2 0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 17A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 150 1.3 4.5 VGS = 10V 1.2 TJ = 3.5 125oC BVDSS / VGS(th) - Normalized 4.0 RDS(on) - Normalized 2.6 3.0 2.5 2.0 TJ = 25oC 1.5 1.0 BV DSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0 10 20 30 40 I D - Amperes ©2021 Littelfuse, Inc. 50 60 70 80 0.5 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFH34N65X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 36 45 V DS = 10V 40 30 35 30 I D - Amperes I D - Amperes 24 18 12 TJ = 125oC 25oC - 40oC 25 20 15 10 6 5 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 VGS - Volts TC - Degrees Centigrade Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 120 40 TJ = - 40oC V DS = 10V 35 100 80 25oC 25 I S - Amperes g f s - Siemens 30 20 125oC 15 60 TJ = 125oC 40 10 TJ = 25oC 20 5 0 0 0 5 10 15 20 25 30 35 40 0.3 45 0.4 0.5 0.6 0.7 Fig. 11. Gate Charge 0.9 1 1.1 1.2 1.3 1.4 Fig. 12. Capacitance 10 100,000.0 9 VDS = 325V I D = 17A I G = 10mA 10,000.0 Capacitance - PicoFarads 8 7 VGS - Volts 0.8 VSD - Volts I D - Amperes 6 5 4 3 2 Ciss 1,000.0 C oss 100.0 10.0 1.0 0 Crss f = 1 MHz 1 0.1 0 5 10 15 20 25 30 QG - NanoCoulombs Littelfuse reserves the right to change limits, test conditions and dimensions. 1 10 100 VDS - Volts 1000 IXFH34N65X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 24 RDS(on) Limit 25µs 16 10 I D - Amperes EOSS - MicroJoules 20 12 8 100µs 1 TJ = 150oC TC = 25oC Single Pulse 4 0 1ms 0.1 0 100 1 200 300 VDS - Volts 400 600 10 Fig.500 15. Maximum Transient Thermal Impedance 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.4 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second ©2021 Littelfuse, Inc. IXYS REF: F_34N65X3 (735) 6-18-20 IXFH34N65X3 TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse reserves the right to change limits, test conditions and dimensions.