IXFH46N65X3

IXFH46N65X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) D N-Channel Enhancement Mode Avalanche Rated G TO-247 (IXFH) S G Symbol Test Conditions VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 46 A IDM TC = 25C, Pulse Width Limited by TJM 65 A IA TC = 25C 10 A EAS TC = 25C 1.2 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 520 W Maximum Ratings -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 °C TJ TL Md = 650V = 46A  73m Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque Nm/lb.in 6 g Weight S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  1.13 / 10 D   High Power Density Easy to Mount Space Savings Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 2.5mA 3.2 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V   ©2021 Littelfuse, Inc. 5.2 V Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 100 nA TJ = 125C 25 A 2 mA 73 m DS101022B(9/21) IXFH46N65X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 17 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 28 S 3.8  2730 pF 4170 pF 18 pF 130 580 pF pF 28 ns 16 ns 48 ns 8 ns 40 nC 13 nC 12 nC Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.24 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 46 A Repetitive, Pulse Width Limited by TJM 184 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 23A, -di/dt = 100A/µs 165 1.3 16.0 ns µC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFH46N65X3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 48 120 VGS = 10V 9V VGS = 10V 40 100 8V 9V 80 I D - Amperes I D - Amperes 32 24 7V 16 8V 60 40 7V 6V 8 20 6V 5V 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 0 2 4 6 8 10 12 14 16 18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 23A Value vs. Junction Temperature 20 3.8 48 VGS = 10V 3.4 40 8V RDS(on) - Normalized 7V 24 16 VGS = 10V 3.0 32 I D - Amperes 5V 0 6V 2.6 I 2.2 D = 46A 1.8 I D = 23A 1.4 1.0 8 0.6 5V 0 0 1 2 3 4 5 6 7 8 0.2 9 -50 -25 0 25 VDS - Volts 75 100 125 150 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature Fig. 5. RDS(on) Normalized to ID = 23A Value vs. Drain Current 1.3 5.0 VGS = 10V 4.5 1.2 BVDSS / VGS(th) - Normalized 4.0 RDS(on) - Normalized 50 TJ - Degrees Centigrade 3.5 TJ = 125oC 3.0 2.5 2.0 TJ = 25oC 1.5 BV DSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.5 0.6 0 20 40 60 I A - Amperes ©2021 Littelfuse, Inc. 80 100 120 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFH46N65X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 50 50 45 VDS = 20V 40 40 I D - Amperes I D - Amperes 35 30 25 20 30 20 TJ = 125oC 25oC 15 10 - 40oC 10 5 0 -50 -25 0 25 50 75 100 125 0 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 6.5 7.0 7.5 180 50 45 TJ = - 40oC VDS = 20V 160 40 140 35 120 25oC I S - Amperes g f s - Siemens 6.0 Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 30 25 125oC 20 100 80 60 15 TJ = 125oC 40 10 TJ = 25oC 20 5 0 0 0 5 10 15 20 25 30 35 40 45 0.4 50 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 VSD - Volts I D - Amperes Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 325V I D = 23A I G = 10mA 9 10,000 Capacitance - PicoFarads 8 7 VGS - Volts 5.5 VGS - Volts 6 5 4 3 2 C iss 1,000 100 C oss 10 C rss f = 1 MHz 1 1 0 0 5 10 15 20 25 30 35 40 QG - NanoCoulombs Littelfuse reserves the right to change limits, test conditions and dimensions. 1 10 100 VDS - Volts 1000 IXFH46N65X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 30 100 RDS(on) Limit 20 10 100µs I D - Amperes EOSS - MicroJoules 25 15 10 1 TJ = 150oC TC = 25oC Single Pulse 5 1ms 10ms 0 0 100 200 300 400 500 600 0.1 1 10 VDS - Volts 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 0.4 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second ©2021 Littelfuse, Inc. IXYS REF: F_46N65X3 (7Z6) 9-28-21-A IXFH46N65X3 TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse reserves the right to change limits, test conditions and dimensions.