IXFH56N30X3

IXFA56N30X3 IXFP56N30X3 IXFH56N30X3 X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) = 300V = 56A  27m  TO-263 (IXFA) D G S G S Symbol Test Conditions VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM Maximum Ratings 56 A 112 A IA TC = 25C 28 A EAS TC = 25C 700 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 320 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G D S Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 1.5mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V G S D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  High Power Density Easy to Mount Space Savings V 4.5 5 500 TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved D G = Gate S = Source  V 100 nA VGS = 10V, ID = 0.5 • ID25, Note 1 D (Tab) TO-247 (IXFH)  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) RDS(on) D (Tab) TO-220 (IXFP) 21 A A 27 m Applications      Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100860C(11/19) IXFA56N30X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 26 RGi Gate Input Resistance Ciss Coss 43 S 2.3  3750 pF 560 pF 3 pF 210 860 pF pF 21 ns 26 ns 64 ns 10 ns 56 nC 18 nC 17 nC VGS = 0V, VDS = 25V, f = 1MHz Crss IXFP56N30X3 IXFH56N30X3 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.39 C/W RthJC RthCS TO-220 TO-247 0.50 0.21 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 56 A Repetitive, Pulse Width Limited by TJM 224 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 28A, -di/dt = 100A/μs 115 580 10 VR = 100V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA56N30X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 200 60 VGS = 10V 9V VGS = 10V 180 160 8V 9V 140 40 I D - Amperes I D - Amperes 50 7V 30 20 8V 120 100 7V 80 60 6V 40 10 6V 20 5V 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 15 VDS - Volts 60 3.0 50 I D - Amperes 40 8V 2.6 7V 2.2 RDS(on) - Normalized VGS = 10V 9V 30 6V 20 10 4V 0 1 1.5 2 2.5 VGS = 10V 1.8 I D = 56A 1.4 I D = 28A 1.0 0.2 3 -50 3.5 -25 0 25 VDS - Volts 75 100 125 150 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 1.2 3.5 BVDSS / VGS(th) - Normalized 4.0 50 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 28A Value vs. Drain Current 4.5 30 0.6 5V 0.5 25 Fig. 4. RDS(on) Normalized to ID = 28A Value vs. Junction Temperature o 0 20 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C RDS(on) - Normalized IXFP56N30X3 IXFH56N30X3 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 1.1 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 20 40 60 80 100 120 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 140 160 180 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA56N30X3 Fig. 7. Maximum Drain Current vs. Case Temperature IXFP56N30X3 IXFH56N30X3 Fig. 8. Input Admittance 80 60 VDS = 10V 70 50 60 I D - Amperes I D - Amperes 40 30 20 50 40 o 30 TJ = 125 C o 25 C 20 o - 40 C 10 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 90 140 80 VDS = 10V o TJ = - 40 C 120 100 60 o 25 C 50 I S - Amperes g f s - Siemens 70 o 125 C 40 80 60 o TJ = 125 C 30 40 o 20 TJ = 25 C 20 10 0 0 0 10 20 30 40 50 60 70 80 0.2 0.4 0.6 1.0 1.2 1.4 Fig. 12. Capacitance Fig. 11. Gate Charge 10 100,000 f = 1 MHz VDS = 150V 9 I D = 28A 8 Capacitance - PicoFarads I G = 10mA 7 VGS - Volts 0.8 VSD - Volts I D - Amperes 6 5 4 3 2 10,000 Ciss 1,000 Coss 100 Crss 10 1 0 1 0 5 10 15 20 25 30 35 40 45 50 55 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFA56N30X3 Fig. 13. Output Capacitance Stored Energy IXFP56N30X3 IXFH56N30X3 Fig. 14. Forward-Bias Safe Operating Area 1000 10 RDS(on) Limit 100 I D - Amperes EOSS - MicroJoules 8 6 4 10 100μs 1 1ms o 2 TJ = 150 C 0.1 10ms o TC = 25 C Single Pulse 0 DC 0.01 0 50 100 150 200 250 300 1 10 VDS - Volts 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_56N30X3 (24-S301) 10-31-17 IXFA56N30X3 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFP56N30X3 IXFH56N30X3 IXFA56N30X3 IXFP56N30X3 IXFH56N30X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved