IXFH60N60X3

IXFH60N60X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) D N-Channel Enhancement Mode Avalanche Rated G TO-247 (IXFH) S G Symbol Test Conditions VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 60 A IDM TC = 25C, Pulse Width Limited by TJM 90 A IA TC = 25C 12 A EAS TC = 25C 1.7 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD Maximum Ratings TC = 25C 625 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 °C TJ TL Md Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque = 600V = 60A  51m Nm/lb.in 6 g Weight S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  1.13 / 10 D   High Power Density Easy to Mount Space Savings Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V   ©2021 Littelfuse, Inc. 5.0 V Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 100 nA TJ = 125C 35 A 1.5 mA 51 m DS101031B(04/21) IXFH60N60X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 20 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 34 S 2.7  3450 pF 5200 pF 53 pF 170 830 pF pF Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 35 ns 18 ns 76 ns 5 ns 51 nC 19 nC 17 nC 0.20 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 30A, -di/dt = 200A/µs 60 A 240 A 1.4 V 175 2.7 31.0 ns µC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFH60N60X3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 160 60 VGS = 15V 10V VGS = 10V 140 50 9V 120 9V I D - Amperes I D - Amperes 40 8V 30 20 100 80 8V 60 7V 40 10 0 0 0.5 1 1.5 2 6V 20 5V 0 2.5 3 7V 6V 0 3.5 5 10 15 20 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature 3.8 60 VGS = 10V 9V 3.4 VGS = 10V 50 8V 40 I D - Amperes RDS(on) - Normalized 3.0 30 7V 20 6V 2.6 I 2.2 D = 60A 1.8 I 1.4 D = 30A 1.0 10 0.6 5V 0 0.2 0 4.5 1 2 3 4 5 6 7 8 9 -25 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 150 1.2 VGS = 10V 1.1 BVDSS / VGS(th) - Normalized 4.0 3.5 RDS(on) - Normalized -50 VDS - Volts TJ = 125oC 3.0 2.5 2.0 TJ = 25oC 1.5 BV DSS 1.0 0.9 VGS(th) 0.8 0.7 1.0 0.5 0.6 0 20 40 60 80 I A - Amperes ©2021 Littelfuse, Inc. 100 120 140 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFH60N60X3 Fig. 8. Input Admittance Fig. 7. Maximum Drain Current vs. Case Temperature 70 60 60 50 40 I D - Amperes I D - Amperes 50 VDS = 10V 40 30 TJ = 125oC 25oC - 40oC 30 20 20 10 10 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 VGS - Volts TC - Degrees Centigrade Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 180 60 VDS = 10V 160 50 140 TJ = - 40oC 120 I S - Amperes 25oC 30 g fs - Siemens 40 20 100 80 60 125oC TJ = 125oC 40 10 TJ = 25oC 20 0 0 0 10 20 30 40 50 60 0.3 70 0.4 0.5 0.6 0.7 0.9 1 1.1 1.2 1.3 1.4 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 300V I D = 30A I G = 10mA 9 10,000 Capacitance - PicoFarads 8 7 VGS - Volts 0.8 VSD - Volts I D - Amperes 6 5 4 3 2 Ciss 1,000 Coss 100 10 f = 1 MHz 1 C rss 1 0 0 5 10 15 20 25 30 35 40 45 50 55 QG - NanoCoulombs Littelfuse reserves the right to change limits, test conditions and dimensions. 1 10 100 VDS - Volts 1,000 IXFH60N60X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 35 100 25µs 30 RDS(on) Limit EOSS - MicroJoules 25 100µs ID - Amperes 10 20 15 1 10 TJ = 150oC TC = 25oC Single Pulse 5 0 1ms 0.1 0 100 200 300 400 500 600 10 100 VDS - Volts 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 0.4 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second ©2021 Littelfuse, Inc. IXYS REF: F_60N60X3 (736) 11-11-20 IXFH60N60X3 TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source Littelfuse reserves the right to change limits, test conditions and dimensions. IXFH60N60X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2021 Littelfuse, Inc.