IXFH60N65X2-4

IXFH60N65X2-4 X2-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) = 650V = 60A  52m D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G Ss TO-247-4L S D S Ss G Symbol Test Conditions VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 60 A IDM TC = 25C, Pulse Width Limited by TJM 120 A IA TC = 25C 15 A EAS TC = 25C 2.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD Maximum Ratings TC = 25C 780 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 6 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque S = Source G = Gate D = Drain Ss = Source Sense Features     International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  Weight ( D )Tab   High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V 5.0 V 100 nA TJ = 125C © 2020 IXYS CORPORATION, All Rights Reserved     Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 25 A 2.5 mA 52 m DS100747A(1/20) IXFH60N65X2-4 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 23 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf 0.8  6300 pF pF 1.7 pF 207 855 pF pF 30 ns 23 ns 63 ns 12 ns 108 nC 40 nC 34 nC Effective Output Capacitance Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs S 3540 Crss Co(er) Co(tr) 38 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.16 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 60 A Repetitive, Pulse Width Limited by TJM 240 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 30A, -di/dt = 100A/µs 180 1.4 16.0 ns µC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFH60N65X2-4 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 60 160 VGS = 10V 9V V GS = 10V 140 50 9V 8V 120 I D - Amperes I D - Amperes 40 7V 30 20 100 8V 80 60 40 6V 10 7V 20 5V 0 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature 60 3.4 VGS = 10V 8V 50 3.0 V GS = 10V I D - Amperes R DS(on) - Normalized 2.6 40 7V 30 6V 20 I D = 60A 2.2 1.8 I D = 30A 1.4 1.0 10 0.6 5V 0 0.2 0 1 2 3 4 5 6 7 8 -50 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current 4.5 100 125 150 BV DSS / VGS(th) - Normalized 1.2 3.5 R DS(on) - Normalized 75 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 4.0 50 TJ - Degrees Centigrade T J = 125oC 3.0 2.5 2.0 T J = 25oC 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0.5 0 20 40 60 80 100 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 120 140 160 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFH60N65X2-4 Fig. 8. Input Admittance Fig. 7. Maxing Drain Current vs. Case Temperature 70 90 80 60 70 50 - Amperes 40 o TJ = 125 C 50 o 25 C o - 40 C 40 I I D 30 D - Amperes 60 30 20 20 10 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 TC - Degrees Centigrade 6.0 6.5 7.0 7.5 8.0 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 70 200 o TJ = - 40 C 180 60 160 o 40 140 - Amperes 25 C o 125 C S 30 120 100 80 I g f s - Siemens 50 o TJ = 125 C 60 20 40 10 o TJ = 25 C 20 0 0 0 10 20 30 40 50 60 70 80 0.3 90 0.4 0.5 0.6 0.7 0.9 1 1.1 1.2 1.3 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 325V 9 I D = 30A 8 Capacitance - PicoFarads I G = 10mA 7 V GS - Volts 0.8 V SD - Volts I D - Amperes 6 5 4 3 2 Ciss 10,000 1,000 Coss 100 10 f = 1 MHz 1 Crss 1 0 0 10 20 30 40 50 60 70 80 90 100 110 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFH60N65X2-4 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 45 1000 40 RDS(on) Limit 100 25µs 30 I D - Amperes EOSS - MicroJoules 35 25 20 100µs 10 15 1 10 o TJ = 150 C o 5 TC = 25 C Single Pulse 0 1 0 100 200 300 400 1ms Fig. 15. Maximum Transient0.1Thermal Impedance 500 600 10 VDS - Volts 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_60N65X2(X7-S602) 11-19-15 IXFH60N65X2-4 TO-247 - 4L Outline PINS: 1,5 - Drain 2 - Source 3 - Source Sense 4 - Gate IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFH60N65X2-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved